Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

doi:10.1088/1674-1056/20/4/047801

Abstract A transmission-mode GaAs photocathode includes four layers of glass, Si₃N₄, Ga_1-xAl_xAs and GaAs. A gradient-doping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spectrophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. In addition, a fitting coefficient needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are gained corresponding to the minimum relative error, meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 7%. The presence of glass layer roughness, layer interface effects and surface oxides is interpreted on the modification.

Keywords: GaAs photocathode transmission-mode optical properties matrix formula

Received: 21 November 2010
Revised: 15 December 2010
Accepted manuscript online:

PACS:	78.66.Fd	(III-V semiconductors)
	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
	78.40.Fy	(Semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60678043) and the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions of China (Grant No. CX09B_096Z).

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Zhao Jing(赵静), Chang Ben-Kang(常本康), Xiong Ya-Juan(熊雅娟) and Zhang Yi-Jun(张益军) Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes 2011 Chin. Phys. B 20 047801

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Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

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