Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

doi:10.1088/1674-1056/20/10/108503

Abstract This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Keywords: InAlGaAs quantum dot superluminescent diode optical coherence tomography short wavelength

Received: 24 March 2011
Revised: 09 May 2011
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	78.67.Hc	(Quantum dots)
	81.07.Ta	(Quantum dots)
	81.16.Dn	(Self-assembly)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60876086, 60976057, and 60776037).

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Liang De-Chun(梁德春), An Qi(安琪), Jin Peng(金鹏), Li Xin-Kun(李新坤), Wei Heng(魏恒), Wu Ju(吴巨), and Wang Zhan-Guo(王占国) Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes 2011 Chin. Phys. B 20 108503

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Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

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