Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

doi:10.1088/1674-1056/24/2/028101

Abstract The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots (QDs) as dislocation filters by metalorganic chemical vapor deposition (MOCVD) is investigated in detail. The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized. It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film. Compared with the dislocation density of 5×10⁷ cm^-2 in the GaAs/Si sample without QDs, a density of 2×10⁶ cm^-2 is achieved in the sample with QD dislocation filters.

Keywords: GaAs-on-Si growth dislocation filter quantum dot

Received: 04 August 2014
Revised: 11 September 2014
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)
	81.07.Ta	(Quantum dots)
	61.72.Lk	(Linear defects: dislocations, disclinations)

Fund: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2013RC1205) and the National Basic Research Program of China (Grant No. 2010CB327601).

Corresponding Authors: Wang Jun
E-mail: wangjun12@bupt.edu.cn

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Wang Jun (王俊), Hu Hai-Yang (胡海洋), Deng Can (邓灿), He Yun-Rui (贺云瑞), Wang Qi (王琦), Duan Xiao-Feng (段晓峰), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏) Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition 2015 Chin. Phys. B 24 028101

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Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

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