CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence |
Gu Yi (顾溢)a, Zhang Yong-Gang (张永刚)a, Song Yu-Xin (宋禹忻)b, Ye Hong (叶虹)b, Cao Yuan-Ying (曹远迎)a, Li Ai-Zhen (李爱珍)a, Wang Shu-Min (王庶民)a b |
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China; b Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden |
|
|
Abstract The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated by using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.
|
Received: 21 August 2012
Revised: 26 November 2012
Accepted manuscript online:
|
PACS:
|
78.55.Cr
|
(III-V semiconductors)
|
|
78.67.De
|
(Quantum wells)
|
|
61.05.cp
|
(X-ray diffraction)
|
|
81.15.Hi
|
(Molecular, atomic, ion, and chemical beam epitaxy)
|
|
Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB619200), the National Natural Science Foundation of China (Grant Nos. 61275113, 61204133, and 60906047), the Innovative Founding of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, and the Swedish Research Council. |
Corresponding Authors:
Zhang Yong-Gang
E-mail: ygzhang@mail.sim.ac.cn
|
Cite this article:
Gu Yi (顾溢), Zhang Yong-Gang (张永刚), Song Yu-Xin (宋禹忻), Ye Hong (叶虹), Cao Yuan-Ying (曹远迎), Li Ai-Zhen (李爱珍), Wang Shu-Min (王庶民) Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence 2013 Chin. Phys. B 22 037802
|
[1] |
Francoeur S, Seong M J, Mascarenhas A, Tixier S, Adamcyk M and Tiedje T 2003 Appl. Phys. Lett. 82 3874
|
[2] |
Yoshida J, Kita T, Wada O and Oe K 2003 Jpn. J. Appl. Phys. 42 371
|
[3] |
Alberi K, Dubon O D, Walukiewicz W, Yu K M, Bertulis K and Krotkus A 2007 Appl. Phys. Lett. 91 051909
|
[4] |
Lee J J, Kim J D and Razeghi M 1998 Appl. Phys. Lett. 73 602
|
[5] |
Song Y X, Wang S M, Roy I S, Shi P X and Hallen A 2012 J. Vac. Sci. Technol. B 30 02B114
|
[6] |
Svensson S P, Hier H, Sarney W L, Donetsky D, Wang D and Belenky G 2012 J. Vac. Sci. Technol. B 30 02B109
|
[7] |
Feng G, Yoshimoto M, Oe K, Chayahara A and Horino Y 2005 Jpn. J. Appl. Phys. 44 L1161
|
[8] |
Zhong Y, Dongmo P B, Petropoulos J P and Zide J M O 2012 Appl. Phys. Lett. 100 112110
|
[9] |
Petropoulos J P, Zhong Y and Zide J M O 2011 Appl. Phys. Lett. 99 031110
|
[10] |
Sung L W and Lin H H 2003 Appl. Phys. Lett. 83 1107
|
[11] |
Chen W C, Su Y K, Chuang R W, Yu H C, Tsai M C, Cheng K Y, Horng J B, Hu C and Tsau S 2008 IEEE Photon. Technol. Lett. 20 264
|
[12] |
Wei Y Q, Sadeghi M, Wang S M, Modh P and Larsson A 2005 Electron. Lett. 41 1328
|
[13] |
Zhao H, Adolfsson G, Wang S M, Sadeghi M and Larsson A 2008 Electron. Lett. 44 416
|
[14] |
Ptak A J, Beaton D A and Mascarenhas A 2012 J. Cryst. Growth 351 122
|
[15] |
Naceur H B, Mzoughi T, Moussa I, Nguyen L, Rebey A and Jani B E 2010 Physica E 43 106
|
[16] |
Zhang Y G, Gu Y, Wang K, Fang X, Li A Z and Liu K H 2012 Rev. Sci. Instrum. 83 053106
|
[17] |
Varshni Y P 1967 Physica 34 149
|
[18] |
Shen W Z, Shen S C, Tang W G, Zhao Y and Li A Z 1995 J. Appl. Phys. 78 5696
|
[19] |
Lei H P, Wu H Z, Lao Y F, Qi M, Li A Z and Shen W Z 2003 J. Cryst. Growth. 256 96
|
[20] |
Gu Y, Zhang Y G, Li A Z, Wang K, Li C and Li Y Y 2009 Chin. Phys. Lett. 26 077808
|
[21] |
Sun H D, Calvez S, Dawson M D, Gupta J A, Aers G C and Sproule G I 2006 Appl. Phys. Lett. 89 101909
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|