Short-wave infrared InGaAs photodetectors and focal plane arrays

doi:10.1088/1674-1056/27/12/128102

Abstract

In this article, unique spectral features of short-wave infrared band of 1 μ-3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelength-extended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.

Keywords: InGaAs short-wave infrared photodetectors focal plane arrays

Received: 06 September 2018
Revised: 21 September 2018
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	72.40.+w	(Photoconduction and photovoltaic effects)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)

Fund:

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402400), the National Natural Science Foundation of China (Grant Nos. 61675225, 61605232, and 61775228), and the Shanghai Rising-Star Program, China (Grant No. 17QA1404900).

Corresponding Authors: Yong-Gang Zhang
E-mail: ygzhang@mail.sim.ac.cn

Cite this article:

Yong-Gang Zhang(张永刚), Yi Gu(顾溢), Xiu-Mei Shao(邵秀梅), Xue Li(李雪), Hai-Mei Gong(龚海梅), Jia-Xiong Fang(方家熊) Short-wave infrared InGaAs photodetectors and focal plane arrays 2018 Chin. Phys. B 27 128102

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Short-wave infrared InGaAs photodetectors and focal plane arrays

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