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High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers |
Xu Yun (徐云), Wang Yong-Bin (王永宾), Zhang Yu (张宇), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠) |
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.
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Received: 15 January 2013
Revised: 08 March 2013
Accepted manuscript online:
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PACS:
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42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Jf
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(Beam characteristics: profile, intensity, and power; spatial pattern formation)
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Fund: Project supported by the Beijing Natural Science Foundation, China (Grant No. 4112058). |
Corresponding Authors:
Song Guo-Feng
E-mail: sgf@semi.ac.cn
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Cite this article:
Xu Yun (徐云), Wang Yong-Bin (王永宾), Zhang Yu (张宇), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠) High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers 2013 Chin. Phys. B 22 094208
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[1] |
Choi H K and Eglash S J 1992 Appl. Phys. Lett. 61 1154
|
[2] |
Kelemen M T, Gilly J, Ahlert S, Kissel H, Biesenbach J, Rattunde M and Wagner J 2009 Proc. SPIE 7483 74830C
|
[3] |
Chen J F, Kipshidze G D and Shterengas L 2010 IEEE J. Quant. Electron. 46 1464
|
[4] |
Rattunde M, Schmitz J, Kaufel G, Kelemen M, Weber J and Wagner J 2006 Appl. Phys. Lett. 88 081115
|
[5] |
Garbuzov D Z, Martinelli R U, Lee H, Menna R J, York P K, DiMarco L A, Harvey M G, Matarese R J, Narayan S and Connolly J C 1997 Appl. Phys. Lett. 70 2931
|
[6] |
Zhang Y, Wang Y B, Xu Y Q, Xu Y, Niu Z C and Song G F 2012 J. Semicond. 33 044006
|
[7] |
Botez D 1999 Appl. Phys. Lett. 74 3102
|
[8] |
Rouillard Y, Angellier J, Salhi A, Grech P and Chevrier F 2005 Proc. SPIE 5738 120
|
[9] |
Salhi A and Al-Muhanna A A 2009 IEEE J. Sel. Top. Quant. Electron. 15 918
|
[10] |
Lin C, Grau M, Dier O and Amann M C 2004 Appl. Phys. Lett. 84 5088
|
[11] |
Garbuzov D Z, Lee H, Khalfin V, Martinelli R, Connolly J C and Belenky G L 1999 IEEE Photon. Technol. Lett. 11 794
|
[12] |
DeLong M C, Mowbray D J, Hogg R A, Skolnick M S, Hopkinson M, David J P R, Taylor P C, Kurtz S R and Olson J M 1993 J. Appl.Phys. 73 5163
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