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Chinese Physics, 2006, Vol. 15(9): 2120-2124    DOI: 10.1088/1009-1963/15/9/036
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Resonant tunnelling of electrons in multi-step single-barrier heterostructures

Wang Chang(王长) and Zhang Yong-Hua(张拥华)
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences and Graduate School of Chinese Academy of Sciences, Shanghai 200050, China
Abstract  We have studied the quantum transport of electrons in a three-step single-barrier AlGaAs heterostructure under electric field. Using the quantum transmitting boundary method and Tsu--Esaki approach, we have calculated the transmission coefficient and current--voltage characteristic. The difference of the effective mass among the three barriers is taken into account. Effects of the barrier width on transmission coefficient and peak-to-valley current ratios are examined. The largest peak-to-valley current ratio is obtained when the ratio of widths of the left, middle, and right barrier is fixed at 4:2:1. The calculated results may be helpful for designing devices based on three-step barrier heterostructures.
Keywords:  electron transport      heterostructure      resonant tunnelling      AlGaAs  
Received:  17 February 2006      Revised:  23 April 2006      Accepted manuscript online: 
PACS:  63.20.D- (Phonon states and bands, normal modes, and phonon dispersion)  
Fund: Project supported by the National Fund for Distinguished Young Scholars of China (Grant No 60425415), the Major Program \linebreak \makebox[1.6mm]{}of the National Natural Science Foundation of China (Grant No 10390162), and the Shanghai Municipal Commission of Science \linebreak \makebox[1.6mm]{}and Technology (Grant No 05XD14020).

Cite this article: 

Wang Chang(王长) and Zhang Yong-Hua(张拥华) Resonant tunnelling of electrons in multi-step single-barrier heterostructures 2006 Chinese Physics 15 2120

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