Abstract Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800--850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.
Received: 04 July 2006
Revised: 05 August 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10374085).
Cite this article:
Fu Sheng-Hui(付生辉), Song Guo-Feng(宋国峰), and Chen Liang-Hui(陈良惠) Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes 2007 Chinese Physics 16 817
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