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Other articles related with "InGaN"：
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37303 |
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process |
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Chin. Phys. B
2023 Vol.32 (3): 37303-037303
[Abstract]
(244)
[HTML 1 KB]
[PDF 836 KB]
(131)
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18103 |
Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson |
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Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets |
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Chin. Phys. B
2023 Vol.32 (1): 18103-018103
[Abstract]
(325)
[HTML 0 KB]
[PDF 3311 KB]
(266)
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106103 |
Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞) |
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Lattice damage in InGaN induced by swift heavy ion irradiation |
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Chin. Phys. B
2022 Vol.31 (10): 106103-106103
[Abstract]
(272)
[HTML 0 KB]
[PDF 1242 KB]
(49)
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74206 |
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋) |
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Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers |
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Chin. Phys. B
2022 Vol.31 (7): 74206-074206
[Abstract]
(343)
[HTML 1 KB]
[PDF 607 KB]
(68)
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17801 |
Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武) |
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Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer |
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Chin. Phys. B
2022 Vol.31 (1): 17801-017801
[Abstract]
(546)
[HTML 0 KB]
[PDF 547 KB]
(94)
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97201 |
Yao Li(李姚) and Hong-Bin Pu(蒲红斌) |
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Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures |
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Chin. Phys. B
2021 Vol.30 (9): 97201-097201
[Abstract]
(480)
[HTML 1 KB]
[PDF 2173 KB]
(81)
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58501 |
Yuan-Hao He(何元浩), Wei Mao(毛维), Ming Du(杜鸣), Zi-Ling Peng(彭紫玲), Hai-Yong Wang(王海永), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate |
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Chin. Phys. B
2021 Vol.30 (5): 58501-058501
[Abstract]
(385)
[HTML 1 KB]
[PDF 1014 KB]
(76)
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18103 |
Zi-Kun Cao(曹子坤), De-Gang Zhao(赵德刚), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Feng Liang(梁锋), and Zong-Shun Liu(刘宗顺) |
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A MOVPE method for improving InGaN growth quality by pre-introducing TMIn |
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Chin. Phys. B
2021 Vol.30 (1): 18103-
[Abstract]
(422)
[HTML 1 KB]
[PDF 911 KB]
(137)
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127802 |
Shou-Qiang Lai(赖寿强), Qing-Xuan Li(李青璇), Hao Long(龙浩), Jin-Zhao Wu(吴瑾照), Lei-Ying Ying(应磊莹), Zhi-Wei Zheng(郑志威), Zhi-Ren Qiu(丘志仁), and Bao-Ping Zhang(张保平) |
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Photoluminescence of green InGaN/GaN MQWs grown on pre-wells |
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Chin. Phys. B
2020 Vol.29 (12): 127802-
[Abstract]
(348)
[HTML 1 KB]
[PDF 652 KB]
(282)
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87801 |
Quan-Jiang Lv(吕全江), Yi-Hong Zhang(张一鸿), Chang-Da Zheng(郑畅达), Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Jun-Lin Liu(刘军林) |
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Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer |
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Chin. Phys. B
2020 Vol.29 (8): 87801-087801
[Abstract]
(715)
[HTML 0 KB]
[PDF 946 KB]
(89)
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47802 |
Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益) |
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Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection |
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Chin. Phys. B
2020 Vol.29 (4): 47802-047802
[Abstract]
(573)
[HTML 1 KB]
[PDF 901 KB]
(144)
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34206 |
Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群) |
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Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift |
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Chin. Phys. B
2020 Vol.29 (3): 34206-034206
[Abstract]
(646)
[HTML 1 KB]
[PDF 705 KB]
(125)
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87802 |
Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽) |
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Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate |
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Chin. Phys. B
2019 Vol.28 (8): 87802-087802
[Abstract]
(508)
[HTML 1 KB]
[PDF 1631 KB]
(188)
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57802 |
Xuee An(安雪娥), Zhengjun Shang(商正君), Chuanhe Ma(马传贺), Xinhe Zheng(郑新和), Cuiling Zhang(张翠玲), Lin Sun(孙琳), Fangyu Yue(越方禹), Bo Li(李波), Ye Chen(陈晔) |
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Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer |
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Chin. Phys. B
2019 Vol.28 (5): 57802-057802
[Abstract]
(684)
[HTML 1 KB]
[PDF 522 KB]
(136)
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127805 |
Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏) |
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Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas |
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Chin. Phys. B
2018 Vol.27 (12): 127805-127805
[Abstract]
(505)
[HTML 1 KB]
[PDF 1622 KB]
(164)
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124210 |
Feng Liang(梁锋), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) |
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Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide |
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Chin. Phys. B
2017 Vol.26 (12): 124210-124210
[Abstract]
(963)
[HTML 1 KB]
[PDF 379 KB]
(252)
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116801 |
Junjun Xue(薛俊俊), Qing Cai(蔡青), Baohua Zhang(张保花), Mei Ge(葛梅), Dunjun Chen(陈敦军), Ting Zhi(智婷), Jiangwei Chen(陈将伟), Lianhui Wang(汪联辉), Rong Zhang(张荣), Youdou Zheng(郑有炓) |
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Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing |
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Chin. Phys. B
2017 Vol.26 (11): 116801-116801
[Abstract]
(602)
[HTML 1 KB]
[PDF 2165 KB]
(199)
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87311 |
Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Ziguang Ma(马紫光), Haiyan Wu(吴海燕), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) |
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Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure |
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Chin. Phys. B
2017 Vol.26 (8): 87311-087311
[Abstract]
(939)
[HTML 1 KB]
[PDF 1381 KB]
(357)
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38104 |
Shitao Liu(刘诗涛), Zhijue Quan(全知觉), Li Wang(王立) |
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Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells |
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Chin. Phys. B
2017 Vol.26 (3): 38104-038104
[Abstract]
(677)
[HTML 0 KB]
[PDF 1517 KB]
(365)
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17805 |
Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫) |
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Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths |
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Chin. Phys. B
2017 Vol.26 (1): 17805-017805
[Abstract]
(577)
[HTML 1 KB]
[PDF 308 KB]
(328)
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17803 |
Feng Xu(徐峰), Peng Chen(陈鹏), Fu-Long Jiang(蒋府龙), Ya-Yun Liu(刘亚云), Zi-Li Xie(谢自立), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Yi Shi(施毅), Rong Zhang(张荣), You-Liao Zheng(郑有炓) |
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High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier |
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Chin. Phys. B
2017 Vol.26 (1): 17803-017803
[Abstract]
(640)
[HTML 1 KB]
[PDF 684 KB]
(438)
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108801 |
Lin Lu(鲁麟), Ming-Chao Li(李明潮), Chen Lv(吕琛), Wen-Gen Gao(高文根), Ming Jiang(江明), Fu-Jun Xu(许福军), Qi-Gong Chen(陈其工) |
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Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers |
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Chin. Phys. B
2016 Vol.25 (10): 108801-108801
[Abstract]
(525)
[HTML 1 KB]
[PDF 312 KB]
(229)
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107803 |
Liang Qiao(乔良), Zi-Guang Ma(马紫光), Hong Chen(陈弘), Hai-Yan Wu(吴海燕), Xue-Fang Chen(陈雪芳), Hao-Jun Yang(杨浩军), Bin Zhao(赵斌), Miao He(何苗), Shu-Wen Zheng(郑树文), Shu-Ti Li(李述体) |
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Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes |
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Chin. Phys. B
2016 Vol.25 (10): 107803-107803
[Abstract]
(712)
[HTML 1 KB]
[PDF 931 KB]
(314)
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18102 |
Ya-Chao Zhang(张雅超), Xiao-Wei Zhou(周小伟), Sheng-Rui Xu (许晟瑞), Da-Zheng Chen(陈大正), Zhi-Zhe Wang(王之哲), Xing Wang(汪星), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition |
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Chin. Phys. B
2016 Vol.25 (1): 18102-018102
[Abstract]
(586)
[HTML 1 KB]
[PDF 1107 KB]
(420)
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127801 |
Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉) |
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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode |
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Chin. Phys. B
2015 Vol.24 (12): 127801-127801
[Abstract]
(802)
[HTML 1 KB]
[PDF 1354 KB]
(451)
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77801 |
Yu Lei (于磊), Zhang Yuan-Wen (张苑文), Li Kai (李凯), Pi Hui (皮辉), Diao Jia-Sheng (刁家声), Wang Xing-Fu (王幸福), Hu Wen-Xiao (胡文晓), Zhang Chong-Zhen (张崇臻), Song Wei-Dong (宋伟东), Shen Yue (沈岳), Li Shu-Ti (李述体) |
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Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates |
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Chin. Phys. B
2015 Vol.24 (7): 77801-077801
[Abstract]
(593)
[HTML 1 KB]
[PDF 512 KB]
(246)
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68503 |
Liu Ming-Gang (柳铭岗), Yang Yi-Bin (杨亿斌), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Lin Xiu-Qi (林秀其), Lin Jia-Li (林佳利), Luo Hui (罗慧), Liao Qiang (廖强), Zang Wen-Jie (臧文杰), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君) |
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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates |
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Chin. Phys. B
2015 Vol.24 (6): 68503-068503
[Abstract]
(478)
[HTML 1 KB]
[PDF 1165 KB]
(657)
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67303 |
Wang Lai (汪莱), Yang Di (杨迪), Hao Zhi-Biao (郝智彪), Luo Yi (罗毅) |
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Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes |
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Chin. Phys. B
2015 Vol.24 (6): 67303-067303
[Abstract]
(704)
[HTML 1 KB]
[PDF 1149 KB]
(755)
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26802 |
Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Zhang Qian (张谦), Meng Xiang-Yue (孟祥岳), Yang Shao-Yan (杨少延), Zhao Gui-Juan (赵桂娟), Li Hui-Jie (李辉杰), Wei Hong-Yuan (魏鸿源), Wang Zhan-Guo (王占国) |
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Effect of the thickness of InGaN interlayer on a-plane GaN epilayer |
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Chin. Phys. B
2015 Vol.24 (2): 26802-026802
[Abstract]
(682)
[HTML 0 KB]
[PDF 488 KB]
(354)
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24219 |
Wang Qiang (王强), Ji Zi-Wu (冀子武), Wang Fan (王帆), Mu Qi (牟奇), Zheng Yu-Jun (郑雨军), Xu Xian-Gang (徐现刚), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红) |
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Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells |
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Chin. Phys. B
2015 Vol.24 (2): 24219-024219
[Abstract]
(854)
[HTML 0 KB]
[PDF 484 KB]
(419)
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17302 |
Zhao Yi (赵一), Zhang Jin-Cheng (张进成), Xue Jun-Shuai (薛军帅), Zhou Xiao-Wei (周小伟), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃) |
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Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys |
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Chin. Phys. B
2015 Vol.24 (1): 17302-017302
[Abstract]
(668)
[HTML 0 KB]
[PDF 456 KB]
(593)
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96203 |
Tao Tao (陶涛), Zhi Ting (智婷), Li Ming-Xue (李民雪), Xie Zi-Li (谢自力), Zhang Rong (张荣), Liu Bin (刘斌), Li Yi (李毅), Zhuang Zhe (庄喆), Zhang Guo-Gang (张国刚), Jiang Fu-Long (蒋府龙), Chen Peng (陈鹏), Zheng You-Dou (郑有炓) |
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Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask |
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Chin. Phys. B
2014 Vol.23 (9): 96203-096203
[Abstract]
(517)
[HTML 1 KB]
[PDF 664 KB]
(466)
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97304 |
Hassen Dakhlaoui |
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Intersubband transitions in InxAl(1-x)N/InyGa(1-y)Nquantum well operating at 1.55 μm |
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Chin. Phys. B
2014 Vol.23 (9): 97304-097304
[Abstract]
(446)
[HTML 1 KB]
[PDF 259 KB]
(452)
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68502 |
Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Wang Wei-Li (王伟丽), Li Shu-Ti (李述体) |
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Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer |
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Chin. Phys. B
2014 Vol.23 (6): 68502-068502
[Abstract]
(807)
[HTML 1 KB]
[PDF 1549 KB]
(573)
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54211 |
Liang Ming-Ming (梁明明), Weng Guo-En (翁国恩), Zhang Jiang-Yong (张江勇), Cai Xiao-Mei (蔡晓梅), Lü Xue-Qin (吕雪芹), Ying Lei-Ying (应磊莹), Zhang Bao-Ping (张保平) |
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Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells |
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Chin. Phys. B
2014 Vol.23 (5): 54211-054211
[Abstract]
(734)
[HTML 1 KB]
[PDF 446 KB]
(611)
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28504 |
Wu Kui (吴奎), Wei Tong-Bo (魏同波), Lan Ding (蓝鼎), Zheng Hai-Yang (郑海洋), Wang Jun-Xi (王军喜), Luo Yi (罗毅), Li Jin-Min (李晋闽) |
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Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography |
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Chin. Phys. B
2014 Vol.23 (2): 28504-028504
[Abstract]
(604)
[HTML 1 KB]
[PDF 588 KB]
(841)
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26801 |
Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Yang Shao-Yan (杨少延), Li Hui-Jie (李辉杰), Zhao Gui-Juan (赵桂娟), Zhang Heng (张恒), Wei Hong-Yuan (魏鸿源), Jiao Chun-Mei (焦春美), Zhu Qin-Sheng (朱勤生), Wang Zhan-Guo (王占国) |
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Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer |
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Chin. Phys. B
2014 Vol.23 (2): 26801-026801
[Abstract]
(642)
[HTML 1 KB]
[PDF 690 KB]
(569)
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28502 |
Yu Xiao-Peng (喻晓鹏), Fan Guang-Han (范广涵), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Xiao Yao (肖瑶), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) |
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Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer |
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Chin. Phys. B
2014 Vol.23 (2): 28502-028502
[Abstract]
(565)
[HTML 1 KB]
[PDF 947 KB]
(1330)
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0 |
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Large-scale SiO2 Photonic Crystal for High Efficiency GaN LEDs by Nanospherical-lens Lithography |
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Chin. Phys. B
Vol. (): 0-0
[Abstract]
(35)
[HTML 0 KB]
[PDF 0 KB]
(4)
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108505 |
Xiong Jian-Yong (熊建勇), Xu Yi-Qin (许毅钦), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵) |
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Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer |
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Chin. Phys. B
2013 Vol.22 (10): 108505-108505
[Abstract]
(651)
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106803 |
Lu Ping-Yuan (卢平元), Ma Zi-Guang (马紫光), Su Shi-Chen (宿世臣), Zhang Li (张力), Chen Hong (陈弘), Jia Hai-Qiang (贾海强), Jiang Yang (江洋), Qian Wei-Ning (钱卫宁), Wang Geng (王耿), Lu Tai-Ping (卢太平), He Miao (何苗) |
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Influence of Si doping on the structural and optical properties of InGaN epilayers |
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Chin. Phys. B
2013 Vol.22 (10): 106803-106803
[Abstract]
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106106 |
Qian Wei-Ning (钱卫宁), Su Shi-Chen (宿世臣), Chen Hong (陈弘), Ma Zi-Guang (马紫光), Zhu Ke-Bao (朱克宝), He Miao (何苗), Lu Ping-Yuan (卢平元), Wang Geng (王耿), Lu Tai-Ping (卢太平), Du Chun-Hua (杜春花), Wang Qiao (王巧), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟) |
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Effect of InxGa1-xN “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition |
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Chin. Phys. B
2013 Vol.22 (10): 106106-106106
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98504 |
Wang Xing-Fu (王幸福), Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers |
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Chin. Phys. B
2013 Vol.22 (9): 98504-098504
[Abstract]
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88401 |
Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content |
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Chin. Phys. B
2013 Vol.22 (8): 88401-088401
[Abstract]
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[PDF 421 KB]
(675)
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88102 |
Wan Tu-Tu (万图图), Ye Zhan-Qi (叶展圻), Tao Tao (陶涛), Xie Zi-Li (谢自力), Zhang Rong (张荣), Liu Bin (刘斌), Xiu Xiang-Qian (修向前), Li Yi (李毅), Han Ping (韩平), Shi Yi (施毅), Zheng You-Dou (郑有炓) |
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The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays |
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Chin. Phys. B
2013 Vol.22 (8): 88102-088102
[Abstract]
(762)
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(719)
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88503 |
Ding Bin-Bin (丁彬彬), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Xiong Jian-Yong (熊建勇), Zheng Shu-Wen (郑树文), Zhang Yun-Yan (张运炎), Xu Yi-Qin (许毅钦), Zhou De-Tao (周德涛), Yu Xiao-Peng (喻晓鹏), Zhang Han-Xiang (张瀚翔), Zhang Tao (张涛), Fan Guang-Han (范广涵) |
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Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer |
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Chin. Phys. B
2013 Vol.22 (8): 88503-088503
[Abstract]
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[PDF 432 KB]
(1467)
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76803 |
Cao Wen-Yu (曹文彧), He Yong-Fa (贺永发), Chen Zhao (陈钊), Yang Wei (杨薇), Du Wei-Min (杜为民), Hu Xiao-Dong (胡晓东) |
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Effects of prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure |
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Chin. Phys. B
2013 Vol.22 (7): 76803-076803
[Abstract]
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68505 |
Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers |
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Chin. Phys. B
2013 Vol.22 (6): 68505-068505
[Abstract]
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[PDF 372 KB]
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26102 |
Yan Qi-Rong (严启荣), Yan Qi-Ang (闫其昂), Shi Pei-Pei (石培培), Niu Qiao-Li (牛巧利), Li Shu-Ti (李述体), Zhang Yong (章勇) |
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Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells |
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Chin. Phys. B
2013 Vol.22 (2): 26102-026102
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118502 |
Tong Jin-Hui (童金辉), Li Shu-Ti (李述体), Lu Tai-Ping (卢太平), Liu Chao (刘超), Wang Hai-Long (王海龙), Wu Le-Juan (仵乐娟), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫 ) |
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Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers |
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Chin. Phys. B
2012 Vol.21 (11): 118502-118502
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108505 |
Chen Zhao (陈钊), Yang Wei (杨薇), Liu Lei (刘磊), Wan Cheng-Hao (万成昊), Li Lei (李磊), He Yong-Fa (贺永发), Liu Ning-Yang (刘宁炀), Wang Lei (王磊), Li Din (李丁), Chen Wei-Hua (陈伟华), Hu Xiao-Dong (胡晓东) |
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Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well |
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Chin. Phys. B
2012 Vol.21 (10): 108505-108505
[Abstract]
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[PDF 457 KB]
(824)
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87802 |
Zhang Dong-Yan (张东炎), Zheng Xin-He (郑新和), Li Xue-Fei (李雪飞), Wu Yuan-Yuan (吴渊渊), Wang Hui (王辉), Wang Jian-Feng (王建峰), Yang Hui (杨辉) |
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Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template |
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Chin. Phys. B
2012 Vol.21 (8): 87802-087802
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(978)
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67702 |
Peng Jing(彭静), Wu Chuan-Ju(吴传菊), Shen Tang-You(孙堂友), Zhao Wen-Ning(赵文宁), Wu Xiao-Feng(吴小锋), Liu Wen(刘文) Wang Shuang-Bao(王双保), Jie Quan-Lin(揭泉林), and Xu Zhi-Mou(徐智谋) |
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Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film |
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Chin. Phys. B
2012 Vol.21 (6): 67702-067702
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[PDF 425 KB]
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77804 |
Zhu Ji-Hong(朱继红), Wang Liang-Ji(王良吉), Zhang Shu-Ming(张书明), Wang Hui(王辉), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), and Yang Hui(杨辉) |
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Simulation of the light extraction efficiency of nanostructure light-emitting diodes |
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Chin. Phys. B
2011 Vol.20 (7): 77804-077804
[Abstract]
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[PDF 654 KB]
(1311)
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76101 |
Zhao Wei(赵维), Wang Lai(汪莱), Wang Jia-Xing(王嘉星), and Luo Yi(罗毅) |
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Luminescence properties of InxGa1 - xN (x ～ 0.04) films grown by metal organic vapour phase epitaxy |
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Chin. Phys. B
2011 Vol.20 (7): 76101-076101
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(1405)
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28402 |
Zhang Xiao-Bin(张小宾), Wang Xiao-Liang(王晓亮), Xiao Hong-Ling(肖红领), Yang Cui-Bai(杨翠柏), Hou Qi-Feng(侯奇峰), Yin Hai-Bo(殷海波), Chen Hong(陈竑), and Wang Zhan-Guo(王占国) |
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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage |
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Chin. Phys. B
2011 Vol.20 (2): 28402-028402
[Abstract]
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[PDF 596 KB]
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116801 |
Xie Zi-Li(谢自力), Zhang Rong(张荣), Fu De-Yi(傅德颐), Liu Bin(刘斌),Xiu Xiang-Qian(修向前), Hua Xue-Mei(华雪梅), Zhao Hong(赵红), Chen Peng(陈鹏),Han Ping(韩平), Shi Yi(施毅), and Zheng You-Dou(郑有炓) |
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Growth and properties of wide spectral white light emitting diodes |
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Chin. Phys. B
2011 Vol.20 (11): 116801-116801
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[PDF 148 KB]
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124211 |
Ji Lian(季莲), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Liu Zong-Shun(刘宗顺), Zeng Chang(曾畅), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Wang Hui(王辉), Duan Li-Hong(段俐宏), and Yang Hui(杨辉) |
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Time delay in InGaN multiple quantum well laser diodes at room temperature |
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Chin. Phys. B
2010 Vol.19 (12): 124211-124211
[Abstract]
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[PDF 273 KB]
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117801 |
Hu Xiao-Long(胡晓龙), Zhang Jiang-Yong(张江勇), Shang Jing-Zhi(尚景智), Liu Wen-Jie(刘文杰), and Zhang Bao-Ping(张保平) |
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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses |
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Chin. Phys. B
2010 Vol.19 (11): 117801-117801
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[PDF 207 KB]
(1162)
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106802 |
Guo Xi(郭希), Wang Hui(王辉), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Zhang Shu-Ming(张书明), and Yang Hui(杨辉) |
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Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques |
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Chin. Phys. B
2010 Vol.19 (10): 106802-106802
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4007 |
Yildiz A, Öztürk M Kemal, Bosi M, Özçelik S, and Kasap M |
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Structural, electrical and optical characterization of InGaN layers grown by MOVPE |
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Chin. Phys. B
2009 Vol.18 (9): 4007-4012
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2120 |
Zhou Jian-Jun(周建军), Wen Bo(文博), Jiang Ruo-Lian(江若琏), Liu Cheng-Xiang(刘成祥), Ji Xiao-Li(姬小利), Xie Zi-Li(谢自力), Chen Dun-Jun(陈敦军), Han Ping(韩平), Zhang Rong(张荣), and Zheng You-Dou(郑有炓) |
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Photoresponse of the In0.3Ga0.7 N metal--insulator--semiconductor photodetectors |
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Chin. Phys. B
2007 Vol.16 (7): 2120-2122
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830 |
Li Zhong-Hui (李忠辉), Yu Tong-Jun (于彤军), Yang Zhi-Jian (杨志坚), Feng Yu-Chun (冯玉春), Zhang Guo-Yi (张国义), Guo Bao-Ping (郭宝平), Niu Han-Ben (牛憨笨) |
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Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN |
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Chin. Phys. B
2005 Vol.14 (4): 830-833
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