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Other articles related with "4H-SiC"：
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87106 |
Zewei Shao(邵泽伟), Hongyi Xu(徐弘毅), Hengyu Wang(王珩宇), Na Ren(任娜), and Kuang Sheng(盛况) |
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Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC |
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Chin. Phys. B
2023 Vol.32 (8): 87106-087106
[Abstract]
(151)
[HTML 1 KB]
[PDF 1484 KB]
(168)
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67205 |
Ruijun Zhang(张锐军), Rongdun Hong(洪荣墩), Jingrui Han(韩景瑞), Hungkit Ting(丁雄杰), Xiguang Li(李锡光), Jiafa Cai(蔡加法), Xiaping Chen(陈厦平), Deyi Fu(傅德颐), Dingqu Lin(林鼎渠), Mingkun Zhang(张明昆), Shaoxiong Wu(吴少雄),Yuning Zhang(张宇宁), Zhengyun Wu(吴正云), and Feng Zhang(张峰) |
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Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation |
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Chin. Phys. B
2023 Vol.32 (6): 67205-067205
[Abstract]
(300)
[HTML 1 KB]
[PDF 2424 KB]
(135)
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38502 |
Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红) |
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Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes |
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Chin. Phys. B
2023 Vol.32 (3): 38502-038502
[Abstract]
(246)
[HTML 1 KB]
[PDF 979 KB]
(163)
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104206 |
Xing-Hua Liu(刘兴华), Fang-Fang Ren(任芳芳), Jiandong Ye(叶建东), Shuxiao Wang(王书晓), Wei-Zong Xu(徐尉宗), Dong Zhou(周东), Mingbin Yu(余明斌), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海) |
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Enhanced single photon emission in silicon carbide with Bull's eye cavities |
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Chin. Phys. B
2022 Vol.31 (10): 104206-104206
[Abstract]
(400)
[HTML 0 KB]
[PDF 942 KB]
(119)
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78501 |
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲) |
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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance |
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Chin. Phys. B
2022 Vol.31 (7): 78501-078501
[Abstract]
(432)
[HTML 1 KB]
[PDF 1551 KB]
(153)
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46104 |
Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yixiao Qian(钱怡潇), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东) |
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Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements |
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Chin. Phys. B
2022 Vol.31 (4): 46104-046104
[Abstract]
(422)
[HTML 1 KB]
[PDF 950 KB]
(172)
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28503 |
Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生) |
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A 4H-SiC merged P-I-N Schottky with floating back-to-back diode |
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Chin. Phys. B
2022 Vol.31 (2): 28503-028503
[Abstract]
(350)
[HTML 0 KB]
[PDF 1044 KB]
(173)
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48504 |
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波) |
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Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs |
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Chin. Phys. B
2021 Vol.30 (4): 48504-
[Abstract]
(472)
[HTML 1 KB]
[PDF 790 KB]
(157)
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28503 |
Si-Cheng Liu(刘思成), Xiao-Yan Tang(汤晓燕), Qing-Wen Song(宋庆文), Hao Yuan(袁昊), Yi-Meng Zhang(张艺蒙), Yi-Men Zhang(张义门), and Yu-Ming Zhang(张玉明) |
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Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C |
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Chin. Phys. B
2021 Vol.30 (2): 28503-0
[Abstract]
(375)
[HTML 1 KB]
[PDF 876 KB]
(72)
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127201 |
Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦) |
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Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time |
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Chin. Phys. B
2019 Vol.28 (12): 127201-127201
[Abstract]
(666)
[HTML 1 KB]
[PDF 1162 KB]
(191)
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117303 |
Hao Yuan(袁昊), Qing-Wen Song(宋庆文), Chao Han(韩超), Xiao-Yan Tang(汤晓燕), Xiao-Ning He(何晓宁), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门) |
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Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure |
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Chin. Phys. B
2019 Vol.28 (11): 117303-117303
[Abstract]
(697)
[HTML 1 KB]
[PDF 594 KB]
(143)
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106101 |
Yi-Dan Tang(汤益丹), Xin-Yu Liu(刘新宇), Zheng-Dong Zhou(周正东), Yun Bai(白云), Cheng-Zhan Li(李诚瞻) |
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Defects and electrical properties in Al-implanted 4H-SiC after activation annealing |
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Chin. Phys. B
2019 Vol.28 (10): 106101-106101
[Abstract]
(643)
[HTML 1 KB]
[PDF 909 KB]
(230)
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98503 |
Xiaolong Cai(蔡小龙), Dong Zhou(周东), Liang Cheng(程亮), Fangfang Ren(任芳芳), Hong Zhong(钟宏), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海) |
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Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses |
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Chin. Phys. B
2019 Vol.28 (9): 98503-098503
[Abstract]
(639)
[HTML 1 KB]
[PDF 1018 KB]
(173)
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27303 |
Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽) |
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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode |
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Chin. Phys. B
2019 Vol.28 (2): 27303-027303
[Abstract]
(789)
[HTML 1 KB]
[PDF 929 KB]
(311)
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17101 |
Shi-Yi Zhuo(卓世异), Xue-Chao Liu(刘学超), Wei Huang(黄维), Hai-Kuan Kong(孔海宽), Jun Xin(忻隽), Er-Wei Shi(施尔畏) |
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Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants |
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Chin. Phys. B
2019 Vol.28 (1): 17101-017101
[Abstract]
(797)
[HTML 1 KB]
[PDF 455 KB]
(234)
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10701 |
Hai-Li Huang(黄海栗), Xiao-Yan Tang(汤晓燕), Hui Guo(郭辉), Yi-Men Zhang(张义门), Yu-Tian Wang(王雨田), Yu-Ming Zhang(张玉明) |
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Simulation of SiC radiation detector degradation |
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Chin. Phys. B
2019 Vol.28 (1): 10701-010701
[Abstract]
(646)
[HTML 1 KB]
[PDF 580 KB]
(158)
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47103 |
Yi-Jie Zhang(张轶杰), Zhi-Peng Yin(尹志鹏), Yan Su(苏艳), De-Jun Wang(王德君) |
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Passivation of carbon dimer defects in amorphous SiO2/4H-SiC (0001) interface: A first-principles study |
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Chin. Phys. B
2018 Vol.27 (4): 47103-047103
[Abstract]
(597)
[HTML 1 KB]
[PDF 3197 KB]
(235)
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127701 |
Qiu-Jie Sun(孙秋杰), Yu-Ming Zhang(张玉明), Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yi-Meng Zhang(张艺蒙), Cheng-Zhan Li(李诚瞻), Yan-Li Zhao(赵艳黎), Yi-Men Zhang(张义门) |
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Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO |
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Chin. Phys. B
2017 Vol.26 (12): 127701-127701
[Abstract]
(671)
[HTML 0 KB]
[PDF 659 KB]
(280)
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107101 |
Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO |
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Chin. Phys. B
2017 Vol.26 (10): 107101-107101
[Abstract]
(579)
[HTML 1 KB]
[PDF 1086 KB]
(369)
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128104 |
Li-Xin Tian(田丽欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-SiC by atomic layer deposition |
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Chin. Phys. B
2016 Vol.25 (12): 128104-128104
[Abstract]
(569)
[HTML 1 KB]
[PDF 1230 KB]
(449)
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97101 |
Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明) |
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Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices |
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Chin. Phys. B
2016 Vol.25 (9): 97101-097101
[Abstract]
(653)
[HTML 0 KB]
[PDF 775 KB]
(336)
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47102 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Hao Yuan(袁昊), Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs |
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Chin. Phys. B
2016 Vol.25 (4): 47102-047102
[Abstract]
(695)
[HTML 1 KB]
[PDF 5205 KB]
(342)
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37306 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors |
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Chin. Phys. B
2016 Vol.25 (3): 37306-037306
[Abstract]
(678)
[HTML 0 KB]
[PDF 923 KB]
(416)
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117304 |
Han Chao (韩超), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Guo Hui (郭辉), Wang Yue-Hu (王悦湖) |
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Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface |
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Chin. Phys. B
2015 Vol.24 (11): 117304-117304
[Abstract]
(699)
[HTML 1 KB]
[PDF 2545 KB]
(381)
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68502 |
Yuan Lei (元磊), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门) |
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Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base |
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Chin. Phys. B
2015 Vol.24 (6): 68502-068502
[Abstract]
(833)
[HTML 1 KB]
[PDF 521 KB]
(339)
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38103 |
Jia Ren-Xu (贾仁需), Dong Lin-Peng (董林鹏), Niu Ying-Xi (钮应喜), Li Cheng-Zhan (李诚瞻), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Yang Fei (杨霏), Zhang Yu-Ming (张玉明) |
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Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1-x gate dielectrics on 4H-SiC |
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Chin. Phys. B
2015 Vol.24 (3): 38103-038103
[Abstract]
(771)
[HTML 0 KB]
[PDF 347 KB]
(392)
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57102 |
Yuan Hao (袁昊), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Yang Fei (杨霏), Wu Hao (吴昊) |
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4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination |
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Chin. Phys. B
2014 Vol.23 (5): 57102-057102
[Abstract]
(658)
[HTML 1 KB]
[PDF 437 KB]
(588)
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57203 |
Wang Xiang-Dong (王向东), Deng Xiao-Chuan (邓小川), Wang Yong-Wei (王永维), Wang Yong (王勇), Wen Yi (文译), Zhang Bo (张波) |
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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring |
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Chin. Phys. B
2014 Vol.23 (5): 57203-057203
[Abstract]
(706)
[HTML 1 KB]
[PDF 498 KB]
(567)
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57303 |
Zhang Yong-Ping (张永平), Chen Zhi-Zhan (陈之战), Lu Wu-Yue (卢吴越), Tan Jia-Hui (谈嘉慧), Cheng Yue (程越), Shi Wang-Zhou (石旺舟) |
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Effect of additional silicon on titanium/4H-SiC contacts properties |
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Chin. Phys. B
2014 Vol.23 (5): 57303-057303
[Abstract]
(545)
[HTML 1 KB]
[PDF 1338 KB]
(397)
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97302 |
Zheng Liu (郑柳), Zhang Feng (张峰), Liu Sheng-Bei (刘胜北), Dong Lin (董林), Liu Xing-Fang (刘兴昉), Fan Zhong-Chao (樊中朝), Liu Bin (刘斌), Yan Guo-Guo (闫果果), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Sun Guo-Sheng (孙国胜), He Zhi (何志), Yang Fu-Hua (杨富华) |
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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions |
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Chin. Phys. B
2013 Vol.22 (9): 97302-097302
[Abstract]
(856)
[HTML 1 KB]
[PDF 1022 KB]
(931)
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97201 |
Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况) |
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A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain |
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Chin. Phys. B
2013 Vol.22 (9): 97201-097201
[Abstract]
(742)
[HTML 1 KB]
[PDF 643 KB]
(928)
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37301 |
Pu Hong-Bin (蒲红斌), He Xin (贺欣), Quan Ru-Dai (全汝岱), Cao Lin (曹琳), Chen Zhi-Ming (陈治明) |
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Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction |
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Chin. Phys. B
2013 Vol.22 (3): 37301-037301
[Abstract]
(695)
[HTML 0 KB]
[PDF 344 KB]
(910)
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27302 |
Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Han Ji-Sheng (韩吉胜), Philip Tanner, Sima Dimitrijev, Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Guo Hui (郭辉) |
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The fabrication and characterization of 4H SiC power UMOSFETs |
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Chin. Phys. B
2013 Vol.22 (2): 27302-027302
[Abstract]
(1118)
[HTML 1 KB]
[PDF 441 KB]
(1566)
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88502 |
Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 ) |
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Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer |
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Chin. Phys. B
2012 Vol.21 (8): 88502-088502
[Abstract]
(1422)
[HTML 1 KB]
[PDF 907 KB]
(1223)
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87701 |
Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Jia Ren-Xu (贾仁需), Lü Hong-Liang (吕红亮), Wang Yue-Hu (王悦湖 ) |
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Investigation of 4H–SiC metal–insulation–semiconductor structure with Al2O3/SiO2 stacked dielectric |
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Chin. Phys. B
2012 Vol.21 (8): 87701-087701
[Abstract]
(1314)
[HTML 1 KB]
[PDF 1498 KB]
(1540)
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37304 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) |
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Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes |
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Chin. Phys. B
2012 Vol.21 (3): 37304-037304
[Abstract]
(1332)
[HTML 1 KB]
[PDF 301 KB]
(1909)
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47802 |
Dong Lin(董林), Sun Guo-Sheng(孙国胜), Zheng Liu(郑柳), Liu Xing-Fang(刘兴昉), Zhang Feng(张峰), Yan Guo-Guo(闫果果), Zhao Wan-Shun(赵万顺), Wang Lei(王雷), Li Xi-Guang(李锡光), and Wang Zhan-Guo(王占国) |
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Characterization of 4H–SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy |
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Chin. Phys. B
2012 Vol.21 (4): 47802-047802
[Abstract]
(1388)
[HTML 1 KB]
[PDF 199 KB]
(845)
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17303 |
Cao Lin(曹琳), Pu Hong-Bin(蒲红斌), Chen Zhi-Ming(陈治明), and Zang Yuan(臧源) |
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Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery |
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Chin. Phys. B
2012 Vol.21 (1): 17303-017303
[Abstract]
(1332)
[HTML 1 KB]
[PDF 260 KB]
(917)
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33301 |
Sun Guo-Sheng(孙国胜), Liu Xing-Fang(刘兴昉), Wu Hai-Lei(吴海雷), Yan Guo-Guo(闫果果), Dong Lin(董林), Zheng Liu(郑柳), Zhao Wan-Shun(赵万顺), Wang Lei(王雷), Zeng Yi-Ping(曾一平), Li Xi-Guang(李锡光), and Wang Zhan-Guo(王占国) |
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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement |
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Chin. Phys. B
2011 Vol.20 (3): 33301-033301
[Abstract]
(1619)
[HTML 1 KB]
[PDF 252 KB]
(1250)
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118401 |
Huang Jian-Hua(黄健华), Lü Hong-Liang(吕红亮), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门),Tang Xiao-Yan(汤晓燕), Chen Feng-Ping(陈丰平), and Song Qing-Wen(宋庆文) |
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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode |
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Chin. Phys. B
2011 Vol.20 (11): 118401-118401
[Abstract]
(1508)
[HTML 0 KB]
[PDF 304 KB]
(1073)
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117301 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) |
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Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode |
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Chin. Phys. B
2011 Vol.20 (11): 117301-117301
[Abstract]
(1883)
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17304 |
Deng Xiao-Chuan(邓小川), Zhang Bo(张波), Zhang You-Run(张有润), Wang Yi(王易), and Li Zhao-Ji(李肇基) |
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Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer |
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Chin. Phys. B
2011 Vol.20 (1): 17304-017304
[Abstract]
(2053)
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[PDF 602 KB]
(990)
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97107 |
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), and Huang Jian-Hua(黄建华) |
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Study of 4H-SiC junction barrier Schottky diode using field guard ring termination |
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Chin. Phys. B
2010 Vol.19 (9): 97107-097107
[Abstract]
(1646)
[HTML 1 KB]
[PDF 2572 KB]
(2317)
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3995 |
Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), Deng Xiao-Chuan(邓小川), and Liu Xi-Ling(刘曦麟) |
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A novel structure of a high current gain 4H-SiC BJT with a buried layer in base |
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Chin. Phys. B
2009 Vol.18 (9): 3995-3999
[Abstract]
(1837)
[HTML 1 KB]
[PDF 753 KB]
(1757)
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3018 |
Deng Xiao-Chuan(邓小川), Feng Zhen(冯震), Zhang Bo(张波), Li Zhao-Ji(李肇基), Li Liang(李亮), and Pan Hong-Shu(潘宏菽) |
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Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs |
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Chin. Phys. B
2009 Vol.18 (7): 3018-3023
[Abstract]
(1379)
[HTML 1 KB]
[PDF 2279 KB]
(864)
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1410 |
Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), and Che Yong(车勇) |
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Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs |
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Chin. Phys. B
2008 Vol.17 (4): 1410-1414
[Abstract]
(1490)
[HTML 1 KB]
[PDF 222 KB]
(643)
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1417 |
Wang Chao(王超), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Electrical and optical characteristics of vanadium in 4H-SiC |
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Chin. Phys. B
2007 Vol.16 (5): 1417-1421
[Abstract]
(1331)
[HTML 1 KB]
[PDF 617 KB]
(772)
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1097 |
Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Lü Hong-Liana(吕红亮), Wang Yue-Hu(王悦湖), Chang Yuan-Cheng(常远程), and Tang Xiao-Yan(汤晓燕) |
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A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs |
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Chin. Phys. B
2007 Vol.16 (4): 1097-1100
[Abstract]
(1436)
[HTML 1 KB]
[PDF 158 KB]
(729)
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2126 |
Xu Peng-Shou (徐彭寿), Xie Chang-Kun (谢长坤), Pan Hai-Bin (潘海斌), Xu Fa-Qiang (徐法强) |
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Theoretical study on the band structure and optical properties of 4H-SiC |
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Chin. Phys. B
2004 Vol.13 (12): 2126-2129
[Abstract]
(1168)
[HTML 0 KB]
[PDF 200 KB]
(519)
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895 |
Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Numerical modelling of anisotropy in 4H-SiC MESFET's |
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Chin. Phys. B
2003 Vol.12 (8): 895-898
[Abstract]
(1340)
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[PDF 212 KB]
(478)
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