Simulation of SiC radiation detector degradation

doi:10.1088/1674-1056/28/1/010701

Abstract

Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the drift-diffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.

Keywords: 4H-SiC detector degradation simulation Z1/2 defect

Received: 20 September 2018
Revised: 30 October 2018
Accepted manuscript online:

PACS:	07.85.Fv	(X- and γ-ray sources, mirrors, gratings, and detectors)
	29.85.Fj	(Data analysis)
	29.40.-n	(Radiation detectors)

Fund:

Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400400).

Corresponding Authors: Xiao-Yan Tang
E-mail: xytang@mail.xidian.edu.cn

Cite this article:

Hai-Li Huang(黄海栗), Xiao-Yan Tang(汤晓燕), Hui Guo(郭辉), Yi-Men Zhang(张义门), Yu-Tian Wang(王雨田), Yu-Ming Zhang(张玉明) Simulation of SiC radiation detector degradation 2019 Chin. Phys. B 28 010701

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