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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement |
| Sun Guo-Sheng(孙国胜)a)b)c), Liu Xing-Fang(刘兴昉)b), Wu Hai-Lei(吴海雷)b), Yan Guo-Guo(闫果果)b), Dong Lin(董林)b), Zheng Liu(郑柳)b), Zhao Wan-Shun(赵万顺)b), Wang Lei(王雷) b), Zeng Yi-Ping(曾一平)a)b), Li Xi-Guang(李锡光)c), and Wang Zhan-Guo(王占国) a) |
| a Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Dongguan Tianyu Semiconductor, Inc., Dongguan 523000, China |
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Abstract The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon–plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×1018 cm-3 and 8×1018 cm-3 with a carrier mobility of 30–55 cm2/(V·s) for n-type 4H-SiC substrates and 1×1016–3×1016 cm-3 with mobility of 290–490 cm2/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×1016 cm-3 with mobility of 380 cm2/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.
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Received: 29 September 2010
Revised: 29 November 2010
Accepted manuscript online:
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PACS:
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33.20.Fb
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(Raman and Rayleigh spectra (including optical scattering) ?)
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71.20.Nr
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(Semiconductor compounds)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876003) and the Knowledge Innovation Project of Chinese Academy of Sciences (Grant Nos. Y072011000 and ISCAS2008T04) and the Science and Technology Projects of the State Grid Corporation of China (ZL71-09-001). |
Cite this article:
Sun Guo-Sheng(孙国胜), Liu Xing-Fang(刘兴昉), Wu Hai-Lei(吴海雷), Yan Guo-Guo(闫果果), Dong Lin(董林), Zheng Liu(郑柳), Zhao Wan-Shun(赵万顺), Wang Lei(王雷), Zeng Yi-Ping(曾一平), Li Xi-Guang(李锡光), and Wang Zhan-Guo(王占国) Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 2011 Chin. Phys. B 20 033301
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