Electrical and optical characteristics of vanadium in 4H-SiC
Wang Chao(王超)†, Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650℃. The resistivity at room temperature is as high as 7.6×106$\Omega\cdot$cm. Significant redistribution of vanadium is not observed even after 1650℃ annealing. Temperature-dependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about EC-1.1eV.
Received: 16 September 2006
Revised: 27 October 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of
China (Grant No 60376001), the National Basic Research Program of
China (Grant No 2002CB311904) and the National Defense Basic
Research Program of China (Grant No 51327020202).
Cite this article:
Wang Chao(王超), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) Electrical and optical characteristics of vanadium in 4H-SiC 2007 Chinese Physics 16 1417
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
