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Chin. Phys. B, 2014, Vol. 23(5): 057303    DOI: 10.1088/1674-1056/23/5/057303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effect of additional silicon on titanium/4H-SiC contacts properties

Zhang Yong-Ping (张永平), Chen Zhi-Zhan (陈之战), Lu Wu-Yue (卢吴越), Tan Jia-Hui (谈嘉慧), Cheng Yue (程越), Shi Wang-Zhou (石旺舟)
Shanghai Normal University, Shanghai 200234, China
Abstract  The Ti electrode was deposited on the (0001 ) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.
Keywords:  Ti/4H-SiC      ohmic contact      surface morphology      additional silicon  
Received:  09 October 2013      Revised:  23 December 2013      Accepted manuscript online: 
PACS:  73.40.Cg (Contact resistance, contact potential)  
  68.55.-a (Thin film structure and morphology)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB326402), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).
Corresponding Authors:  Chen Zhi-Zhan     E-mail:  chenwbgs@126.com
About author:  73.40.Cg; 68.55.-a

Cite this article: 

Zhang Yong-Ping (张永平), Chen Zhi-Zhan (陈之战), Lu Wu-Yue (卢吴越), Tan Jia-Hui (谈嘉慧), Cheng Yue (程越), Shi Wang-Zhou (石旺舟) Effect of additional silicon on titanium/4H-SiC contacts properties 2014 Chin. Phys. B 23 057303

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