Abstract The high-temperature performance of 4H-SiC ultraviolet avalanche photodiodes (APDs) in both linear and Geiger modes is extensively investigated. During the temperature-dependent measurements, a fixed bias voltage is adopted for the device samples, which is much more practical and important for high-temperature applications. The results show that the fabricated 4H-SiC APDs are very stable and reliable at high temperatures. As the temperature increases from room temperature to 425 K, the dark current at 95% of the breakdown voltage increases slightly and remains lower than 40 pA. In Geiger mode, our 4H-SiC APDs can be self-quenched in a passive-quenching circuit, which is expected for high-speed detection systems. Moreover, an interesting phenomenon is observed for the first time: the single-photon detection efficiency shows a non-monotonic variation as a function of temperature. The physical mechanism of the variation in high-temperature performance is further analyzed. The results in this work can provide a fundamental reference for researchers in the field of 4H-SiC APD ultraviolet detectors.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61974134) and Hebei Province Outstanding Youth Fund (Grant No. F2021516001).
Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红) Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes 2023 Chin. Phys. B 32 038502
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