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Chin. Phys. B, 2019, Vol. 28(12): 127201    DOI: 10.1088/1674-1056/ab4e89
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time

Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦)
Xi'an University of Technology, Xi'an 710048, China
Abstract  An ultra-high voltage 4H-silicon carbide (SiC) gate turn-off (GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p+/n+ region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n+-p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm2.
Keywords:  4H-SiC      gate turn-off (GTO) thyristor      turn-on      turn-off  
Received:  26 July 2019      Revised:  27 September 2019      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Rs (Thyristors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51677149).
Corresponding Authors:  Hong-Bin Pu     E-mail:  puhongbin@xaut.edu.cn

Cite this article: 

Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦) Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time 2019 Chin. Phys. B 28 127201

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