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Chin. Phys. B, 2008, Vol. 17(4): 1410-1414    DOI: 10.1088/1674-1056/17/4/043
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

Lü Hong-Liang(吕红亮)a), Zhang Yi-Men(张义门)a), Zhang Yu-Ming(张玉明)a), and Che Yong(车勇)b)
a Microelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi'an 710071, China; b Engineering College of Armed Police Force, Xi'an 710086, China
Abstract  A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region $I-V$ model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physical-based simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.
Keywords:  4H-SiC      MESFET      self-heating      analytic model  
Received:  24 June 2007      Revised:  05 November 2007      Accepted manuscript online: 
PACS:  72.20.Fr (Low-field transport and mobility; piezoresistance)  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
  73.40.Sx (Metal-semiconductor-metal structures)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60606022) the State Key Development Program for Basic Research of China (Grant No 51327010101) and Xi'an Applied Materials Innovation Fund, China (Grant No XA-AM-200702).

Cite this article: 

Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), and Che Yong(车勇) Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs 2008 Chin. Phys. B 17 1410

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