A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs
Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Lü Hong-Liana(吕红亮), Wang Yue-Hu(王悦湖), Chang Yuan-Cheng(常远程), and Tang Xiao-Yan(汤晓燕)
Microelectronics Institute of Xidian University, Key Laboratory of Wide Bandgap Semiconductor Material and Device of Education Ministry, Xi'an 710071, China
Abstract This paper reports that a 4H-SiC MESFET (Metal Semiconductor Field Effect Transistor) large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE (power added efficiency), output power and gain.
Received: 15 June 2006
Revised: 07 September 2006
Accepted manuscript online:
Fund: Project supported by the National
Defense Basic Research Program (Grant No 51327010101).
Cite this article:
Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Lü Hong-Liana(吕红亮), Wang Yue-Hu(王悦湖), Chang Yuan-Cheng(常远程), and Tang Xiao-Yan(汤晓燕) A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs 2007 Chinese Physics 16 1097
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