Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

doi:10.1088/1674-1056/ab343f

Abstract

Four 4H-SiC p-i-n ultraviolet (UV) avalanche photodiode (APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses (0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed and fabricated. Single photon detection efficiency (SPDE) performance becomes better as the intrinsic layer thickness increases, which is attributed to the inhibitation of tunneling. Dark count origin is also investigated, an activation energy as small as 0.22 eV of the dark count rate (DCR) confirms that the trap-assisted tunneling (TAT) process is the main source of DCR. The temperature coefficient ranges from -2.6 mV/℃ to 18.3 mV/℃, demonstrating that the TAT process is dominant in APDs with thinner intrinsic layers. Additionally, the room temperature maximum quantum efficiency at 280 nm differs from 48% to 65% for PIN-0.35, PIN-0.5, and PIN-1.0 under 0 V bias, and UV/visible rejection ratios higher than 10⁴ are obtained.

Keywords: 4H-SiC avalanche photodiode single photon detection efficiency tunneling

Received: 10 April 2019
Revised: 25 June 2019
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund:

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400902) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Corresponding Authors: Hai Lu
E-mail: hailu@nju.edu.cn

Cite this article:

Xiaolong Cai(蔡小龙), Dong Zhou(周东), Liang Cheng(程亮), Fangfang Ren(任芳芳), Hong Zhong(钟宏), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海) Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses 2019 Chin. Phys. B 28 098503

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Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

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