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Other articles related with "Schottky barrier"：
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128507 |
Qiming He(何启鸣), Weibing Hao(郝伟兵), Qiuyan Li(李秋艳), Zhao Han(韩照), Song He(贺松),Qi Liu(刘琦), Xuanze Zhou(周选择), Guangwei Xu(徐光伟), and Shibing Long(龙世兵) |
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β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings |
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Chin. Phys. B
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[Abstract]
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88101 |
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High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure |
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Chin. Phys. B
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[Abstract]
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17305 |
Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波) |
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High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure |
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Chin. Phys. B
2023 Vol.32 (1): 17305-017305
[Abstract]
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108105 |
Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田) |
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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction |
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Chin. Phys. B
2022 Vol.31 (10): 108105-108105
[Abstract]
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87101 |
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Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain |
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Chin. Phys. B
2022 Vol.31 (8): 87101-087101
[Abstract]
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57702 |
Qiliang Wang(王启亮), Tingting Wang(王婷婷), Taofei Pu(蒲涛飞), Shaoheng Cheng(成绍恒),Xiaobo Li(李小波), Liuan Li(李柳暗), and Jinping Ao(敖金平) |
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Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode |
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Chin. Phys. B
2022 Vol.31 (5): 57702-057702
[Abstract]
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47302 |
Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文) |
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Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics |
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Chin. Phys. B
2022 Vol.31 (4): 47302-047302
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67305 |
Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Design and simulation of AlN-based vertical Schottky barrier diodes |
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Chin. Phys. B
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67302 |
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Device topological thermal management of β-Ga2O3 Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (6): 67302-067302
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68501 |
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Effect of electrical contact on performance of WSe2 field effect transistors |
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Chin. Phys. B
2021 Vol.30 (6): 68501-068501
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56110 |
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Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation |
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Chin. Phys. B
2021 Vol.30 (5): 56110-056110
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38101 |
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Vertical GaN Shottky barrier diode with thermally stable TiN anode |
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Chin. Phys. B
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27301 |
Tao Fang(房涛), Ling-Qi Li(李灵琪), Guang-Rui Xia(夏光睿), and Hong-Yu Yu(于洪宇) |
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Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (2): 27301-0
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104212 |
Lu-Wei Qi(祁路伟), Jin Meng(孟进), Xiao-Yu Liu(刘晓宇), Yi Weng(翁祎), Zhi-Cheng Liu(刘志成), De-Hai Zhang(张德海)†, Jing-Tao Zhou(周静涛)‡, and Zhi Jin(金智) |
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Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor |
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Chin. Phys. B
2020 Vol.29 (10): 104212-
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(130)
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98801 |
Brahim Ait Ali, Reda Moubah, Abdelkader Boulezhar, Hassan Lassri |
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Temperature-dependent barrier height inhomogeneities in PTB7:PC71BM-based organic solar cells |
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Chin. Phys. B
2020 Vol.29 (9): 98801-098801
[Abstract]
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57306 |
Lu-Wei Qi(祁路伟), Xiao-Yu Liu(刘晓宇), Jin Meng(孟进), De-Hai Zhang(张德海), Jing-Tao Zhou(周静涛) |
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Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure |
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Chin. Phys. B
2020 Vol.29 (5): 57306-057306
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47305 |
Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科) |
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Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination |
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Chin. Phys. B
2020 Vol.29 (4): 47305-047305
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117303 |
Hao Yuan(袁昊), Qing-Wen Song(宋庆文), Chao Han(韩超), Xiao-Yan Tang(汤晓燕), Xiao-Ning He(何晓宁), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门) |
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Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure |
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Chin. Phys. B
2019 Vol.28 (11): 117303-117303
[Abstract]
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87303 |
Zhi-Cheng Wang(王志成), Zhang-Zhang Cui(崔璋璋), Hui Xu(徐珲), Xiao-Fang Zhai(翟晓芳), Ya-Lin Lu(陆亚林) |
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Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO3/Nb:SrTiO3 junctions |
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Chin. Phys. B
2019 Vol.28 (8): 87303-087303
[Abstract]
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[PDF 998 KB]
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27303 |
Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽) |
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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode |
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Chin. Phys. B
2019 Vol.28 (2): 27303-027303
[Abstract]
(814)
[HTML 1 KB]
[PDF 929 KB]
(321)
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17105 |
Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华) |
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Review of gallium oxide based field-effect transistors and Schottky barrier diodes |
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Chin. Phys. B
2019 Vol.28 (1): 17105-017105
[Abstract]
(936)
[HTML 1 KB]
[PDF 5647 KB]
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127302 |
Hui Wang(王辉), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Si-Qi Lei(雷思琦), Hong-Yu Yu(于洪宇) |
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A simulation study of field plate termination in Ga2O3 Schottky barrier diodes |
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Chin. Phys. B
2018 Vol.27 (12): 127302-127302
[Abstract]
(675)
[HTML 1 KB]
[PDF 650 KB]
(179)
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97203 |
Yi-Dong Wang(王一栋), Jun Chen(陈俊) |
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Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode |
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Chin. Phys. B
2018 Vol.27 (9): 97203-097203
[Abstract]
(620)
[HTML 1 KB]
[PDF 1187 KB]
(188)
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87304 |
Xin Ye(叶鑫), Xiao-Chuan Xia(夏晓川), Hong-Wei Liang(梁红伟), Zhuo Li(李卓), He-Qiu Zhang(张贺秋), Guo-Tong Du(杜国同), Xing-Zhu Cui(崔兴柱), Xiao-Hua Liang(梁晓华) |
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Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection |
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Chin. Phys. B
2018 Vol.27 (8): 87304-087304
[Abstract]
(642)
[HTML 0 KB]
[PDF 735 KB]
(179)
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127101 |
Jun-Hui Lei(雷军辉), Xiu-Fen Wang(王秀峰), Jian-Guo Lin(林建国) |
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Tuning electronic properties of the S2/graphene heterojunction by strains from density functional theory |
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Chin. Phys. B
2017 Vol.26 (12): 127101-127101
[Abstract]
(604)
[HTML 0 KB]
[PDF 1950 KB]
(330)
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27304 |
Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾) |
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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction |
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Chin. Phys. B
2016 Vol.25 (2): 27304-027304
[Abstract]
(648)
[HTML 1 KB]
[PDF 689 KB]
(510)
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97303 |
Zhong Jian (钟健), Yao Yao (姚尧), Zheng Yue (郑越), Yang Fan (杨帆), Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Shen Zhen (沈震), Zhou Gui-Lin (周桂林), Zhou De-Qiu (周德秋), Wu Zhi-Sheng (吴志盛), Zhang Bai-Jun (张伯君), Liu Yang (刘扬) |
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Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode |
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Chin. Phys. B
2015 Vol.24 (9): 97303-097303
[Abstract]
(996)
[HTML 1 KB]
[PDF 601 KB]
(569)
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77306 |
Wei Jiang-Bin (魏江镔), Chi Xiao-Wei (池晓伟), Lu Chao (陆超), Wang Chen (王尘), Lin Guang-Yang (林光杨), Wu Huan-Da (吴焕达), Huang Wei (黄巍), Li Cheng (李成), Chen Song-Yan (陈松岩), Liu Chun-Li (刘春莉) |
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Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride |
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Chin. Phys. B
2015 Vol.24 (7): 77306-077306
[Abstract]
(736)
[HTML 1 KB]
[PDF 340 KB]
(372)
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117306 |
E. Yağlıoğlu, Ö. Tüzün Özmen |
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F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode |
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Chin. Phys. B
2014 Vol.23 (11): 117306-117306
[Abstract]
(612)
[HTML 1 KB]
[PDF 367 KB]
(622)
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97308 |
Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate |
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Chin. Phys. B
2014 Vol.23 (9): 97308-097308
[Abstract]
(805)
[HTML 1 KB]
[PDF 1081 KB]
(778)
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17702 |
Chen Feng (陈峰), Wu Wen-Bin (吴文彬), Li Shun-Yi (李舜怡), Andreas Klein |
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Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy |
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Chin. Phys. B
2014 Vol.23 (1): 17702-017702
[Abstract]
(513)
[HTML 1 KB]
[PDF 3124 KB]
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27101 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) |
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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Chin. Phys. B
2014 Vol.23 (2): 27101-027101
[Abstract]
(723)
[HTML 1 KB]
[PDF 268 KB]
(741)
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97201 |
Cheng Peng-Fei (成鹏飞), Li Sheng-Tao (李盛涛), Li Jian-Ying (李建英), Ding Can (丁璨), Yang Yan (杨雁) |
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Physical meaning of conductivity spectra for ZnO ceramics |
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Chin. Phys. B
2012 Vol.21 (9): 97201-097201
[Abstract]
(1490)
[HTML 1 KB]
[PDF 183 KB]
(644)
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47302 |
Liu Zi-Yu(刘紫玉), Zhang Pei-Jian(张培健), Meng Yang(孟洋), Li Dong(李栋), Meng Qing-Yu(孟庆宇), Li Jian-Qi(李建奇), and Zhao Hong-Wu(赵宏武) |
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The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device |
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Chin. Phys. B
2012 Vol.21 (4): 47302-047302
[Abstract]
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[HTML 1 KB]
[PDF 228 KB]
(905)
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17303 |
Cao Lin(曹琳), Pu Hong-Bin(蒲红斌), Chen Zhi-Ming(陈治明), and Zang Yuan(臧源) |
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Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery |
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Chin. Phys. B
2012 Vol.21 (1): 17303-017303
[Abstract]
(1342)
[HTML 1 KB]
[PDF 260 KB]
(921)
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17103 |
Cao Zhi-Fang(曹芝芳), Lin Zhao-Jun(林兆军), LŰ Yuan-Jie(吕元杰), Luan Chong-Biao(栾崇彪), Yu Ying-Xia(于英霞), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes |
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Chin. Phys. B
2012 Vol.21 (1): 17103-017103
[Abstract]
(1409)
[HTML 1 KB]
[PDF 247 KB]
(1189)
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27305 |
Luan Su-Zhen(栾苏珍) and Liu Hong-Xia(刘红侠) vgluept |
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Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs" |
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Chin. Phys. B
2011 Vol.20 (2): 27305-027305
[Abstract]
(1586)
[HTML 1 KB]
[PDF 73 KB]
(506)
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57802 |
Zhao De-Gang(赵德刚), Zhang Shuang(张爽), Liu Wen-Bao(刘文宝), Hao Xiao-Peng(郝小鹏), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Yang Hui(杨辉), and Wei Long(魏龙) |
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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors |
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Chin. Phys. B
2010 Vol.19 (5): 57802-057802
[Abstract]
(1321)
[HTML 1 KB]
[PDF 327 KB]
(928)
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107304 |
Nan Ya-Gong(南雅公), Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), and Ren Jie(任杰) |
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Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties |
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Chin. Phys. B
2010 Vol.19 (10): 107304-107304
[Abstract]
(1470)
[HTML 1 KB]
[PDF 532 KB]
(841)
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107207 |
M. A. Yeganeh,Sh. Rahmatallahpur, A. Nozad, and R. K. Mamedov |
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Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes |
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Chin. Phys. B
2010 Vol.19 (10): 107207-107207
[Abstract]
(1736)
[HTML 1 KB]
[PDF 3060 KB]
(1642)
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107101 |
Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), Chen Zhi-Ming(陈治明), Ren Jie(仁杰), and Nan Ya-Gong(南雅公) |
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Modeling of 4H–SiC multi-floating-junction Schottky barrier diode |
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Chin. Phys. B
2010 Vol.19 (10): 107101-107101
[Abstract]
(1646)
[HTML 1 KB]
[PDF 280 KB]
(844)
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17203 |
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Characterization of ion-implanted 4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2010 Vol.19 (1): 17203-017203
[Abstract]
(1425)
[HTML 1 KB]
[PDF 344 KB]
(973)
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3490 |
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) |
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High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact |
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Chin. Phys. B
2009 Vol.18 (8): 3490-3494
[Abstract]
(1636)
[HTML 1 KB]
[PDF 1316 KB]
(1055)
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1931 |
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) |
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High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diode at room temperature |
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Chin. Phys. B
2009 Vol.18 (5): 1931-1934
[Abstract]
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5029 |
Li Fei(李菲), Zhang Xiao-Ling(张小玲), Duan Yi(段毅), Xie Xue-Song(谢雪松), and ü Chang-Zhi(吕长志) |
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High-temperature current conduction through three kinds of Schottky diodes |
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Chin. Phys. B
2009 Vol.18 (11): 5029-5033
[Abstract]
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[PDF 712 KB]
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4465 |
An Xia(安霞), Fan Chun-Hui(范春晖), Huang Ru(黄如), Guo Yue(郭岳), Xu Cong(徐聪), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元) |
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The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique |
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Chin. Phys. B
2009 Vol.18 (10): 4465-4469
[Abstract]
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[PDF 5296 KB]
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3077 |
Luan Su-Zhen(栾苏珍) and Liu Hong-Xia(刘红侠) |
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Quantum compact model for thin-body double-gate Schottky barrier MOSFETs |
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Chin. Phys. B
2008 Vol.17 (8): 3077-3082
[Abstract]
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[PDF 782 KB]
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3875 |
Wang Ding-Qu(王鼎渠), Zhou Zhao-Ying(周兆英), Zhu Rong(朱荣), and Ye Xiong-Ying(叶雄英) |
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Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes |
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Chin. Phys. B
2008 Vol.17 (10): 3875-3879
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240 |
Li Ding-Yu(李定宇), Sun Lei(孙雷), Zhang Sheng-Dong (张盛东), Wang Yi(王漪), Liu Xiao-Yan(刘晓彦), and Han Ru-Qi(韩汝琦) |
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Schottky barrier MOSFET structure with silicide source/drain on buried metal |
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Chin. Phys. B
2007 Vol.16 (1): 240-244
[Abstract]
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1639 |
Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Zhou Jia (周嘉), Huang Yi-Ping (黄宜平) |
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I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction |
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Chin. Phys. B
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[Abstract]
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322 |
Wang Shou-Guo (王守国), Yang Lin-An (杨林安), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Zhang Zhi-Yong (张志勇), Yan Jun-Feng (闫军锋) |
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Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes |
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[Abstract]
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156 |
Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Qu Xin-Ping (屈新萍), Li Bing-Zong (李炳宗), R.L.Van Meirhaeghe, C.Detavernier, F.Cardon |
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Double threshold behaviour of I--V characteristics of CoSi2/Si Schottky contacts |
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Chin. Phys. B
2002 Vol.11 (2): 156-162
[Abstract]
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