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Other articles related with "transistors"：
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48102 |
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Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors |
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118101 |
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W-doped In2O3 nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity |
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Chin. Phys. B
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108101 |
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Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer |
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Chin. Phys. B
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98503 |
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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications |
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Chin. Phys. B
2023 Vol.32 (9): 98503-098503
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87701 |
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Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack |
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Chin. Phys. B
2023 Vol.32 (8): 87701-087701
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78504 |
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High on-state current p-type tunnel effect transistor based on doping modulation |
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Chin. Phys. B
2023 Vol.32 (7): 78504-078504
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28504 |
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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation |
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Chin. Phys. B
2023 Vol.32 (2): 28504-028504
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88101 |
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Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases |
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Chin. Phys. B
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57301 |
Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment |
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Chin. Phys. B
2022 Vol.31 (5): 57301-057301
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28502 |
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Radiation effects of 50-MeV protons on PNP bipolar junction transistors |
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Chin. Phys. B
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17701 |
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Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor |
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Chin. Phys. B
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118102 |
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Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress |
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Chin. Phys. B
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Optically-controlled resistive switching effectsof CdS nanowire memtransistor |
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Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN |
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Chin. Phys. B
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58102 |
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Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor |
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Chin. Phys. B
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47103 |
Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪) |
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Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor |
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Chin. Phys. B
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40502 |
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (4): 40502-
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Si-Cheng Liu(刘思成), Xiao-Yan Tang(汤晓燕), Qing-Wen Song(宋庆文), Hao Yuan(袁昊), Yi-Meng Zhang(张艺蒙), Yi-Men Zhang(张义门), and Yu-Ming Zhang(张玉明) |
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Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C |
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Chin. Phys. B
2021 Vol.30 (2): 28503-0
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118101 |
Yalan Wang(王雅兰), Mingxiang Wang(王明湘), Dongli Zhang(张冬利), and Huaisheng Wang(王槐生) |
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A systematic study of light dependency of persistent photoconductivity in a-InGaZnO thin-film transistors |
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Chin. Phys. B
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97701 |
Bo-Bo Tian(田博博), Ni Zhong(钟妮), Chun-Gang Duan(段纯刚) |
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Recent advances, perspectives, and challenges inferroelectric synapses |
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Chin. Phys. B
2020 Vol.29 (9): 97701-097701
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118501 |
M Micjan, M Novota, P Telek, M Donoval, M Weis |
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Hunting down the ohmic contact of organic field-effect transistor |
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Chin. Phys. B
2019 Vol.28 (11): 118501-118501
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107301 |
Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer |
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Chin. Phys. B
2019 Vol.28 (10): 107301-107301
[Abstract]
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107303 |
Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华) |
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Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors |
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Chin. Phys. B
2019 Vol.28 (10): 107303-107303
[Abstract]
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98502 |
Rui Chen(陈蕊), Dong-Yue Jin(金冬月), Wan-Rong Zhang(张万荣), Li-Fan Wang(王利凡), Bin Guo(郭斌), Hu Chen(陈虎), Ling-Han Yin(殷凌寒), Xiao-Xue Jia(贾晓雪) |
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Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout |
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Chin. Phys. B
2019 Vol.28 (9): 98502-098502
[Abstract]
(647)
[HTML 1 KB]
[PDF 2321 KB]
(1063)
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68504 |
Zheng-Xin Wen(温正欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Jun Chen(陈俊), Ya-Wei He(何亚伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension |
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Chin. Phys. B
2019 Vol.28 (6): 68504-068504
[Abstract]
(684)
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[PDF 1521 KB]
(265)
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67302 |
Yan Liu(刘岩), Wei Chen(陈伟), Chaohui He(贺朝会), Chunlei Su(苏春垒), Chenhui Wang(王晨辉), Xiaoming Jin(金晓明), Junlin Li(李俊霖), Yuanyuan Xue(薛院院) |
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Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons |
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Chin. Phys. B
2019 Vol.28 (6): 67302-067302
[Abstract]
(621)
[HTML 1 KB]
[PDF 1403 KB]
(134)
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17105 |
Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华) |
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Review of gallium oxide based field-effect transistors and Schottky barrier diodes |
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Chin. Phys. B
2019 Vol.28 (1): 17105-017105
[Abstract]
(899)
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78502 |
Cong Li(李聪), Zhi-Rui Yan(闫志蕊), Yi-Qi Zhuang(庄奕琪), Xiao-Long Zhao(赵小龙), Jia-Min Guo(郭嘉敏) |
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Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric |
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Chin. Phys. B
2018 Vol.27 (7): 78502-078502
[Abstract]
(506)
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[PDF 1485 KB]
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48504 |
Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯) |
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Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures |
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Chin. Phys. B
2018 Vol.27 (4): 48504-048504
[Abstract]
(665)
[HTML 1 KB]
[PDF 4283 KB]
(226)
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47208 |
Su-Zhen Luan(栾苏珍), Yu-Cheng Wang(汪钰成), Yin-Tao Liu(刘银涛), Ren-Xu Jia(贾仁需) |
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Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors |
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Chin. Phys. B
2018 Vol.27 (4): 47208-047208
[Abstract]
(664)
[HTML 1 KB]
[PDF 1054 KB]
(235)
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16103 |
J Assaf |
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Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation |
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Chin. Phys. B
2018 Vol.27 (1): 16103-016103
[Abstract]
(552)
[HTML 1 KB]
[PDF 1198 KB]
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128101 |
Dong-Yu Qi(齐栋宇), Dong-Li Zhang(张冬利), Ming-Xiang Wang(王明湘) |
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Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors |
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Chin. Phys. B
2017 Vol.26 (12): 128101-128101
[Abstract]
(595)
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[PDF 443 KB]
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98502 |
Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲) |
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Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout |
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Chin. Phys. B
2017 Vol.26 (9): 98502-098502
[Abstract]
(819)
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[PDF 612 KB]
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97104 |
Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭) |
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Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (9): 97104-097104
[Abstract]
(653)
[HTML 0 KB]
[PDF 409 KB]
(245)
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97401 |
Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌) |
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Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures |
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Chin. Phys. B
2017 Vol.26 (9): 97401-097401
[Abstract]
(547)
[HTML 1 KB]
[PDF 1008 KB]
(248)
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47307 |
Yong-Hui Zhang(张永晖), Zeng-Xia Mei(梅增霞), Hui-Li Liang(梁会力), Xiao-Long Du(杜小龙) |
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Review of flexible and transparent thin-film transistors based on zinc oxide and related materials |
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Chin. Phys. B
2017 Vol.26 (4): 47307-047307
[Abstract]
(735)
[HTML 1 KB]
[PDF 7052 KB]
(1745)
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37307 |
Xuefei Li(李学飞), Xiong Xiong(熊雄), Yanqing Wu(吴燕庆) |
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Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices |
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Chin. Phys. B
2017 Vol.26 (3): 37307-037307
[Abstract]
(748)
[HTML 1 KB]
[PDF 5935 KB]
(479)
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117305 |
Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment |
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Chin. Phys. B
2016 Vol.25 (11): 117305-117305
[Abstract]
(880)
[HTML 1 KB]
[PDF 1879 KB]
(434)
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97202 |
Jun Chen(陈俊), Jiabing Lv(吕加兵) |
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Spectral response modeling and analysis of p-n-p In0.53Ga0.47As/InP HPTs |
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Chin. Phys. B
2016 Vol.25 (9): 97202-097202
[Abstract]
(718)
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[PDF 233 KB]
(280)
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96110 |
Lili Ding(丁李利), Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella |
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Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors |
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Chin. Phys. B
2016 Vol.25 (9): 96110-096110
[Abstract]
(781)
[HTML 1 KB]
[PDF 251 KB]
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57306 |
Chen-Fei Wu(武辰飞), Yun-Feng Chen(陈允峰), Hai Lu(陆海), Xiao-Ming Huang(黄晓明), Fang-Fang Ren(任芳芳), Dun-Jun Chen(陈敦军), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy |
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Chin. Phys. B
2016 Vol.25 (5): 57306-057306
[Abstract]
(711)
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[PDF 654 KB]
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46104 |
Qi-Feng Zhao(赵启凤), Yi-Qi Zhuang(庄奕琪), Jun-Lin Bao(包军林), Wei Hu(胡为) |
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Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates |
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Chin. Phys. B
2016 Vol.25 (4): 46104-046104
[Abstract]
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37306 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors |
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Chin. Phys. B
2016 Vol.25 (3): 37306-037306
[Abstract]
(657)
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(416)
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38503 |
Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平) |
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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature |
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Chin. Phys. B
2016 Vol.25 (3): 38503-038503
[Abstract]
(817)
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[PDF 371 KB]
(378)
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27701 |
Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪) |
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Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27701-027701
[Abstract]
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[HTML 1 KB]
[PDF 356 KB]
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27303 |
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor |
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|
|
Chin. Phys. B
2016 Vol.25 (2): 27303-027303
[Abstract]
(957)
[HTML 1 KB]
[PDF 496 KB]
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128101 |
Ma Liu-Hong (马刘红), Han Wei-Hua (韩伟华), Wang Hao (王昊), Yang Xiang (杨香), Yang Fu-Hua (杨富华) |
| |
|
Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors |
| |
|
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Chin. Phys. B
2015 Vol.24 (12): 128101-128101
[Abstract]
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[HTML 1 KB]
[PDF 1597 KB]
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127306 |
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Xue Jun-Shuai (薛军帅), Zhu Jie-Jie (祝杰杰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
| |
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Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors |
| |
|
|
Chin. Phys. B
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[Abstract]
(755)
[HTML 1 KB]
[PDF 472 KB]
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117305 |
Luo Jun (罗俊), Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Yang Xiao-Lei (杨晓蕾), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors |
| |
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Chin. Phys. B
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[Abstract]
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[HTML 1 KB]
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117103 |
Yang Ming (杨铭), Lin Zhao-Jun (林兆军), Zhao Jing-Tao (赵景涛), Wang Yu-Tang (王玉堂), Li Zhi-Yuan (李志远), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红) |
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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors |
| |
|
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Chin. Phys. B
2015 Vol.24 (11): 117103-117103
[Abstract]
(480)
[HTML 1 KB]
[PDF 257 KB]
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96803 |
Xie Ying-Tao (谢应涛), Ouyang Shi-Hong (欧阳世宏), Wang Dong-Ping (王东平), Zhu Da-Long (朱大龙), Xu Xin (许鑫), Tan Te (谭特), Fong Hon-Hang (方汉铿) |
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Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces |
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Chin. Phys. B
2015 Vol.24 (9): 96803-096803
[Abstract]
(703)
[HTML 1 KB]
[PDF 379 KB]
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88504 |
Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明) |
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Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress |
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Chin. Phys. B
2015 Vol.24 (8): 88504-088504
[Abstract]
(831)
[HTML 1 KB]
[PDF 398 KB]
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77307 |
Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明) |
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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors |
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Chin. Phys. B
2015 Vol.24 (7): 77307-077307
[Abstract]
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[HTML 1 KB]
[PDF 552 KB]
(471)
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67301 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生) |
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Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression |
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Chin. Phys. B
2015 Vol.24 (6): 67301-067301
[Abstract]
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[HTML 1 KB]
[PDF 473 KB]
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58502 |
Fu Zong-Yuan (浮宗元), Zhang Jian-Chi (张剑驰), Hu Jing-Hang (胡静航), Jiang Yu-Long (蒋玉龙), Ding Shi-Jin (丁士进), Zhu Guo-Dong (朱国栋) |
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Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors |
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Chin. Phys. B
2015 Vol.24 (5): 58502-058502
[Abstract]
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[HTML 1 KB]
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37304 |
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Hou Bin (侯斌), Wang Chong (王冲), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2015 Vol.24 (3): 37304-037304
[Abstract]
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[HTML 0 KB]
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114402 |
Fu Qiang (付强), Zhang Wan-Rong (张万荣), Jin Dong-Yue (金冬月), Ding Chun-Bao (丁春宝), Zhao Yan-Xiao (赵彦晓), Lu Dong (鲁东) |
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Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT |
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Chin. Phys. B
2014 Vol.23 (11): 114402-114402
[Abstract]
(597)
[HTML 1 KB]
[PDF 1131 KB]
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107303 |
Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain |
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Chin. Phys. B
2014 Vol.23 (10): 107303-107303
[Abstract]
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[HTML 1 KB]
[PDF 1455 KB]
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97305 |
Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (9): 97305-097305
[Abstract]
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[HTML 1 KB]
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88107 |
Wang Hao (王昊), Han Wei-Hua (韩伟华), Ma Liu-Hong (马刘红), Li Xiao-Ming (李小明), Yang Fu-Hua (杨富华) |
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Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures |
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Chin. Phys. B
2014 Vol.23 (8): 88107-088107
[Abstract]
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[HTML 1 KB]
[PDF 1831 KB]
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68501 |
Liu Yu-Rong (刘玉荣), Su Jing (苏晶), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河) |
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Positive gate-bias temperature instability of ZnO thin-film transistor |
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Chin. Phys. B
2014 Vol.23 (6): 68501-068501
[Abstract]
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[HTML 1 KB]
[PDF 445 KB]
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47201 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂) |
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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (4): 47201-047201
[Abstract]
(483)
[HTML 1 KB]
[PDF 336 KB]
(478)
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38505 |
Li Hai-Qiang (李海强), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Shi Wei (施薇), Huang Jiang (黄江) |
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High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric |
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Chin. Phys. B
2014 Vol.23 (3): 38505-038505
[Abstract]
(862)
[HTML 1 KB]
[PDF 492 KB]
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26101 |
Chen Yong-Yue (陈勇跃), Wang Xiong (王雄), Cai Xi-Kun (才玺坤), Yuan Zi-Jian (原子健), Zhu Xia-Ming (朱夏明), Qiu Dong-Jiang (邱东江), Wu Hui-Zhen (吴惠桢) |
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Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor |
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Chin. Phys. B
2014 Vol.23 (2): 26101-026101
[Abstract]
(650)
[HTML 1 KB]
[PDF 1013 KB]
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128503 |
Zhong Ying-Hui (钟英辉), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Wang Xian-Tai (王显泰), Lü Hong-Liang (吕红亮), Liu Xin-Yu (刘新宇), Jin Zhi (金智) |
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0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz |
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Chin. Phys. B
2013 Vol.22 (12): 128503-128503
[Abstract]
(596)
[HTML 1 KB]
[PDF 1012 KB]
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98505 |
Wang Xin-Ran (王欣然), Shi Yi (施毅), Zhang Rong (张荣) |
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Field-effect transistors based on two-dimensional materials for logic applications |
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Chin. Phys. B
2013 Vol.22 (9): 98505-098505
[Abstract]
(722)
[HTML 1 KB]
[PDF 3245 KB]
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67203 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Wang Yu-Tang (王玉堂), Chen Hong (陈弘), Wang Zhan-Guo (王占国) |
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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor |
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Chin. Phys. B
2013 Vol.22 (6): 67203-067203
[Abstract]
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[HTML 1 KB]
[PDF 550 KB]
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57304 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Chen Yong-He (陈永和), Yang Li-Yuan (杨丽媛), Wang Chong (王冲), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2013 Vol.22 (5): 57304-057304
[Abstract]
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[HTML 1 KB]
[PDF 610 KB]
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104211 |
Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Rui Er-Ming (芮二明), Guo Li-Xin (郭立新), Yang Jian-Qun (杨剑群) |
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Incident particle range dependence of radiation damage in a power bipolar junction transistor |
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Chin. Phys. B
2012 Vol.21 (10): 104211-104211
[Abstract]
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[HTML 1 KB]
[PDF 503 KB]
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80703 |
Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Yang De-Zhuang (杨德庄), He Shi-Yu (何世禹 ) |
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Effect of bias condition on heavy ion radiation in bipolar junction transistor |
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Chin. Phys. B
2012 Vol.21 (8): 80703-080703
[Abstract]
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[HTML 1 KB]
[PDF 171 KB]
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88502 |
Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 ) |
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Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer |
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Chin. Phys. B
2012 Vol.21 (8): 88502-088502
[Abstract]
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[HTML 1 KB]
[PDF 907 KB]
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88104 |
Xuan Rui-Jie (轩瑞杰), Liu Hui-Xuan (刘慧宣 ) |
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Low-voltage antimony-doped SnO2 nanowire transparent transistors gated by microporous SiO2-based proton conductors |
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Chin. Phys. B
2012 Vol.21 (8): 88104-088104
[Abstract]
(1230)
[HTML 1 KB]
[PDF 3444 KB]
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78503 |
Chen Chao (陈超), Tian Ben-Lang (田本朗), Liu Xing-Zhao (刘兴钊), Dai Li-Ping (戴丽萍), Deng Xin-Wu (邓新武), Chen Yuan-Fu (陈远富 ) |
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The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
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Chin. Phys. B
2012 Vol.21 (7): 78503-078503
[Abstract]
(1420)
[HTML 1 KB]
[PDF 123 KB]
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77304 |
Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) |
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Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique |
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Chin. Phys. B
2012 Vol.21 (7): 77304-077304
[Abstract]
(1704)
[HTML 1 KB]
[PDF 288 KB]
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58501 |
Ge Ji(葛霁), Liu Hong-Gang(刘洪刚), Su Yong-Bo(苏永波), Cao Yu-Xiong(曹玉雄), and Jin Zhi(金智) |
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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors |
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Chin. Phys. B
2012 Vol.21 (5): 58501-058501
[Abstract]
(1442)
[HTML 1 KB]
[PDF 187 KB]
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57201 |
Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) |
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Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer |
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Chin. Phys. B
2012 Vol.21 (5): 57201-057201
[Abstract]
(1378)
[HTML 1 KB]
[PDF 562 KB]
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47303 |
Zhang Jian(张健), He Jin(何进), Zhou Xing-Ye(周幸叶), Zhang Li-Ning(张立宁), Ma Yu-Tao(马玉涛), Chen Qin(陈沁), Zhang Xu-Kai(张勖凯), Yang Zhang(杨张), Wang Rui-Fei(王睿斐), HanYu(韩雨), and Chan Mansun(陈文新) |
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A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel |
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Chin. Phys. B
2012 Vol.21 (4): 47303-047303
[Abstract]
(1352)
[HTML 1 KB]
[PDF 303 KB]
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27305 |
Zhou Jian-Lin(周建林), Yu Jun-Sheng(于军胜), Yu Xin-Ge(于欣格), and Cai Xin-Yang(蔡欣洋) |
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A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes |
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Chin. Phys. B
2012 Vol.21 (2): 27305-027305
[Abstract]
(1046)
[HTML 1 KB]
[PDF 1560 KB]
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27304 |
Jiang Xiang-Wei(姜向伟) and Li Shu-Shen(李树深) |
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Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs |
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Chin. Phys. B
2012 Vol.21 (2): 27304-027304
[Abstract]
(1212)
[HTML 1 KB]
[PDF 748 KB]
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87306 |
Wang Hong(王宏), Ji Zhuo-Yu(姬濯宇), Shang Li-Wei(商立伟), Liu Xing-Hua(刘兴华), Peng Ying-Quan(彭应全), and Liu Ming(刘明) |
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Top contact organic field effect transistors fabricated using a photolithographic process |
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Chin. Phys. B
2011 Vol.20 (8): 87306-087306
[Abstract]
(1386)
[HTML 1 KB]
[PDF 873 KB]
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67304 |
Ma Xiao-Hua(马晓华), Ma Ji-Gang(马骥刚), Yang Li-Yuan(杨丽媛), He Qiang(贺强), Jiao Ying(焦颖), Ma Ping(马平), and Hao Yue(郝跃) |
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Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress |
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Chin. Phys. B
2011 Vol.20 (6): 67304-067304
[Abstract]
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[HTML 1 KB]
[PDF 450 KB]
(1976)
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58501 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
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Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor |
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Chin. Phys. B
2011 Vol.20 (5): 58501-058501
[Abstract]
(1479)
[HTML 0 KB]
[PDF 284 KB]
(842)
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57201 |
Zhang An(张安), Zhao Xiao-Ru(赵小如), Duan Li-Bing(段利兵), Liu Jin-Ming(刘金铭), and Zhao Jian-Lin(赵建林) |
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Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position |
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Chin. Phys. B
2011 Vol.20 (5): 57201-057201
[Abstract]
(1446)
[HTML 0 KB]
[PDF 1041 KB]
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27303 |
Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier |
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Chin. Phys. B
2011 Vol.20 (2): 27303-027303
[Abstract]
(1637)
[HTML 1 KB]
[PDF 838 KB]
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18502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Ma Jian-Li(马建立), and Xu Li-Jun(许立军) |
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Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator |
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Chin. Phys. B
2011 Vol.20 (1): 18502-018502
[Abstract]
(1612)
[HTML 0 KB]
[PDF 263 KB]
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18101 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
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Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis |
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Chin. Phys. B
2011 Vol.20 (1): 18101-018101
[Abstract]
(1716)
[HTML 1 KB]
[PDF 634 KB]
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17306 |
Sun Qin-Jun(孙钦军), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), and Gao Li-Yan(高利岩) |
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Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer |
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Chin. Phys. B
2011 Vol.20 (1): 17306-017306
[Abstract]
(1493)
[HTML 1 KB]
[PDF 480 KB]
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17304 |
Deng Xiao-Chuan(邓小川), Zhang Bo(张波), Zhang You-Run(张有润), Wang Yi(王易), and Li Zhao-Ji(李肇基) |
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Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer |
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Chin. Phys. B
2011 Vol.20 (1): 17304-017304
[Abstract]
(2033)
[HTML 0 KB]
[PDF 602 KB]
(987)
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16102 |
He Jin(何进), Liu Feng(刘峰), Zhou Xing-Ye(周幸叶), Zhang Jian(张健), and Zhang Li-Ning(张立宁) |
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A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region |
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Chin. Phys. B
2011 Vol.20 (1): 16102-016102
[Abstract]
(1652)
[HTML 1 KB]
[PDF 589 KB]
(1351)
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97306 |
Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), and Tian Wen-Chao(田文超) |
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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97306-097306
[Abstract]
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[HTML 1 KB]
[PDF 785 KB]
(747)
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77305 |
Zhou Jian-Lin (周建林), Niu Qiao-Li (牛巧利) |
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Properties of C60 thin film transistor based on polystyrene |
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Chin. Phys. B
2010 Vol.19 (7): 77305-077305
[Abstract]
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[HTML 1 KB]
[PDF 2677 KB]
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66103 |
Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭) |
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Degradation mechanisms of current gain in NPN transistors |
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Chin. Phys. B
2010 Vol.19 (6): 66103-066103
[Abstract]
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[HTML 1 KB]
[PDF 268 KB]
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47301 |
Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高) |
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Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (4): 47301-047301
[Abstract]
(1546)
[HTML 1 KB]
[PDF 409 KB]
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18103 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才),Li Jing(李婧), Sun Qin-Jun(孙钦军),Wang Yun(王赟), and Xu Xu-Rong(徐叙瑢) |
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Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (1): 18103-018103
[Abstract]
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[HTML 0 KB]
[PDF 5000 KB]
(897)
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3568 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才), and Xu Xu-Rong(徐叙瑢) |
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Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors |
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Chin. Phys. B
2009 Vol.18 (8): 3568-3572
[Abstract]
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[HTML 1 KB]
[PDF 1344 KB]
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3002 |
Li Jian-Feng(李建丰), Chang Wen-Li(常文利), Ou Gu-Ping(欧谷平), and Zhang Fu-Jia(张福甲) |
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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide |
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Chin. Phys. B
2009 Vol.18 (7): 3002-3007
[Abstract]
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[HTML 1 KB]
[PDF 1577 KB]
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1601 |
Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华) |
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High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2009 Vol.18 (4): 1601-1608
[Abstract]
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[HTML 1 KB]
[PDF 1865 KB]
(1038)
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5078 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Xu Xu-Rong(徐叙瑢), Yuan Guang-Cai(袁广才), Li Jing(李婧), Sun Qin-Jun(孙钦军), and Wang Ying(王赟) |
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Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors |
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Chin. Phys. B
2009 Vol.18 (11): 5078-5083
[Abstract]
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[HTML 1 KB]
[PDF 3151 KB]
(535)
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1119 |
Gao Hong-Ling(高宏玲), Zeng Yi-Ping(曾一平), Wang Bao-Qiang(王宝强), Zhu Zhan-Ping(朱战平), and Wang Zhan-Guo(王占国) |
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Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/ In0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy |
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Chin. Phys. B
2008 Vol.17 (3): 1119-1123
[Abstract]
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[HTML 1 KB]
[PDF 380 KB]
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3822 |
Yuan Guang-Cai(袁广才), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Huang Jin-Zhao(黄金昭), Huang Jin-Ying (黄金英), Tian Xue-Yan(田雪雁), and Xu Xu-Rong (徐叙瑢) |
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The effect of annealing temperature and film thickness on the phase of pentacene on the p+-Si substrate |
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Chin. Phys. B
2008 Vol.17 (10): 3822-3826
[Abstract]
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[HTML 1 KB]
[PDF 1006 KB]
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3760 |
Li Dong-Mei(李冬梅), Wang Zhi-Hua(王志华), Huangfu Li-Ying(皇甫丽英), and Gou Qiu-Jing(勾秋静), |
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Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology |
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Chin. Phys. B
2007 Vol.16 (12): 3760-3765
[Abstract]
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[HTML 1 KB]
[PDF 991 KB]
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