Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN

doi:10.1088/1674-1056/abe2fb

Abstract Ultra-high-voltage (UHV) junction field-effect transistors (JFETs) embedded separately with the lateral NPN (JFET-LNPN), and the lateral and vertical NPN (JFET-LVNPN), are demonstrated experimentally for improving the electrostatic discharge (ESD) robustness. The ESD characteristics show that both JFET-LNPN and JFET-LVNPN can pass the 5.5-kV human body model (HBM) test. The JFETs embedded with different NPNs have 3.75 times stronger in ESD robustness than the conventional JFET. The failure analysis of the devices is performed with scanning electron microscopy, and the obtained delayer images illustrate that the JFETs embedded with NPN transistors have good voltage endurance capabilities. Finally, the internal physical mechanism of the JFETs embedded with different NPNs is investigated with emission microscopy and Sentaurus simulation, and the results confirm that the JFET-LVNPN has stronger ESD robustness than the JFET-LNPN, because the vertical NPN has a better electron collecting capacity. The JFET-LVNPN is helpful in providing a strong ESD protection and functions for a power device.

Keywords: junction field-effect transistors NPN electrostatic discharge (ESD) robustness ESD protection

Received: 19 November 2020
Revised: 30 December 2020
Accepted manuscript online: 04 February 2021

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61504049).

Corresponding Authors: Hai-Lian Liang
E-mail: lhl2010@jiangnan.edu.cn

Cite this article:

Xi-Kun Feng(冯希昆), Xiao-Feng Gu(顾晓峰), Qin-Ling Ma(马琴玲), Yan-Ni Yang(杨燕妮), and Hai-Lian Liang(梁海莲) Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN 2021 Chin. Phys. B 30 078502

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Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN

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