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High on-state current p-type tunnel effect transistor based on doping modulation |
| Jiale Sun(孙佳乐)1, Yuming Zhang(张玉明)1, Hongliang Lu(吕红亮)1,†, Zhijun Lyu(吕智军)2, Yi Zhu(朱翊)1, Yuche Pan(潘禹澈)1, and Bin Lu(芦宾)3 |
1 School of Microelectronics, Xidian University, The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
2 Department of Integrated Circuit Design, Institute of Microelectronics Technology, Xi'an 710071, China;
3 School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China |
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Abstract To solve the problem of the low on-state current in p-type tunnel field-effect transistors (p-TFETs), this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier. Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure. This method provides a new idea for the realization of high on-state current TFET devices.
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Received: 08 July 2022
Revised: 22 September 2022
Accepted manuscript online: 21 October 2022
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PACS:
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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73.40.Gk
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(Tunneling)
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| Fund: Project supported by the Key Research and Development Program of Shaanxi (Grant No. 2021GY-010) and the National Defense Science and Technology Foundation Strengthening Program of China (Grant No. 2019-XXXX-XX-236-00). |
Corresponding Authors:
Hongliang Lu
E-mail: hllv@mail.xidian.edu.cn
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Cite this article:
Jiale Sun(孙佳乐), Yuming Zhang(张玉明), Hongliang Lu(吕红亮), Zhijun Lyu(吕智军),Yi Zhu(朱翊), Yuche Pan(潘禹澈), and Bin Lu(芦宾) High on-state current p-type tunnel effect transistor based on doping modulation 2023 Chin. Phys. B 32 078504
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[1] Wang Q, Sang P, Ma X, Wang F and Chen J 2020 IEEE International Electron Devices Meeting (IEDM) San Francisco, December 10–18, 2020, CA, USA, p. 1
[2] Park Y H, Yi B, Kim S H, Shim J H and Yang J W 2021 IEEE Trans. Electron Device 68 4051
[3] Goyal P, Srivastava G, Rewari S and Gupta R S 2020 5th IEEE International Conference on Recent Advances and Innovations in Engineering (ICRAIE), December 1–3, 2020, Jaipur, India, p. 1
[4] Choi W Y, Park B, Lee J D and Liu T K 2007 IEEE Electron Device Lett. 28 743
[5] Sung H K, Kam H, Hu C and Liu T K 2009 Symposium on VLSI Technology, June 15–17, 2009, Kyoto, Japan, p. 178
[6] Takagi S, Kim M, Noguchi M, Nishi K and Takenaka M 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S), October 1–2, 2015, Berkeley, USA, p. 1
[7] Huang Q, Huang R, Zhan Z, Qiu Y, Jiang W, Wu C and Wang Y 2012 International Electron Devices Meeting (IEDM), December 10– 13, 2012, San Francisco, USA, p. 8.5.1
[8] Huang Q, Huang R, Wu C L, Zhu H, Chen C, Wang J X, Guo L Y, Wang R S, Ye L and Wang Y Y 2014 International Electron Devices Meeting (IEDM), December 15–17, 2014, San Francisco, CA, USA, p. 13.3.1
[9] SZE S Z (translated by Wu G Y, Geng L and Zhang R Z) 2008 Physics Of Semiconductor Devices (Xi’an: Xi’an Jiaotong University Press) p. 321 (in Chinese)
[10] Mayer F, Royer C L, Damlencourt J, Romanjek K, Andrieu F, Tabone C, Previtali B, Deleonibus S 2008 International Electron Devices Meeting (IEDM), December 15–17, 2008, San Francisco, CA, USA, p. 1
[11] Jeon K, Loh W Y, Patel P, Kang C Y, Oh J, Bowonder A, Park C, Park C S, Smith C, Majhi P, Tseng H H, Jammy P, Liu T J K and Hu K 2010 Symposium on VLSI Technology, June 15–17, 2010 Honolulu, HI, USA, p. 121
[12] Richter S, Sandow C, Nichau A, Trellenkamp S, Schmidt M, Luptak R, Bourdelle K K, Zhao Q T and Mantl S 2012 IEEE Electron Device Lett. 33 1535
[13] Zhao Y, Wu C, Huang Q, Chen C, Zhu J, Guo L, Jia R, Lv Z, Yang Y, Li M, Huang R 2017 IEEE Electron Device Lett. 38 540
[14] Mohata D K, Bijesh R, Zhu Y, Hudait M K, Southwick R, Chbili Z, Gundlach D, Suehle J, Fastenau J M, Loubychev D, Liu A K, Mayer T S, Narayanan V and Datta S 2012 Symposium on VLSI Technology (VLSIT), June 12–14, 2012, Honolulu, HI, USA, p. 53
[15] Riel H, Moselund K, Bessire C, Bjork M, Schenk A, Ghoneim H, Schmid H 2012 International Electron Devices Meeting (IEDM), December 10–13, 2012, San Francisco, CA, USA, p. 16.6.1
[16] Huang Q Q, Jia R, Chen C, Zhu H, Guo L, Wang J, Wang J, Wu C, Wang R, Bu W, Kang J, Wang W, Wu H, Lee S, Wang Y and Huang R 2015 International Electron Devices Meeting (IEDM), December 7–9, 2015, San Francisco, CA, USA, p. 22.2.1
[17] Liu E K, Zhu B S, Luo J S 2011 The Physics Of Semiconductor (7th edition) (Beijing: Publishing House of Electronics Industry) p. 184 (in Chinese)
[18] Guan X D 2011 Silicon Integrated Circuit Process Fundamentals (Beijing: Peking University Press) p. 97 (in Chinese)
[19] Lyu Z J, Lu H L, Zhang Y M, Zhang Y M, Lu B, Cui X R and Zhao Y X 2018 IEEE Trans. Electron Device 65 4988
[20] Huang Q Q, Huang R, Zhan Z, Wu C, Qiu Y and Wang Y 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, October 29–Novermber 1, 2012 Xi’an, p. 1
[21] Mookerjea S, Mohata D, Mayer T, Narayanan V and Datta S and 2010 IEEE Electron Device Lett. 31 564 |
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