Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

doi:10.1088/1674-1056/ac05aa

Abstract A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress (NBS) is observed for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), which can recover in a short time. After comparing with the degradation phenomena under negative bias illumination stress (NBIS), positive bias stress (PBS), and positive bias illumination stress (PBIS), degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies ($V_{\mathrm{o}}^{+}$) in addition to the commonly reported doubly charged oxygen vacancies ($V_{\mathrm{o}}^{2+}$). Furthermore, the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of $V_{\mathrm{o}}^{+}$ under positive gate bias. The proposed degradation mechanisms are verified by TCAD simulation.

Keywords: amorphous IGZO thin-film transistors negative bias stress subthreshold swing

Received: 01 April 2021
Revised: 18 May 2021
Accepted manuscript online: 27 May 2021

PACS:	81.05.Gc	(Amorphous semiconductors)
	81.05.Ea	(III-V semiconductors)
	85.30.Tv	(Field effect devices)

Fund: Project supported in part by the National Natural Science Foundation of China (Grant Nos. 61971299 and 61974101), the Natural Science Foundation of Jiangsu Province, China (Grant No. SBK2020021406), the Fund from the State Key Laboratory of ASIC and System, Fudan University (Grant No. 2019KF007), the Fund from the Suzhou Science and Technology Bureau (Grant No. SYG201933), and the Fund from the Jiangsu Higher Education Institute of China (Grant No. 19KJB510058).

Corresponding Authors: Dongli Zhang
E-mail: dongli_zhang@suda.edu.cn

Cite this article:

Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生) Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress 2021 Chin. Phys. B 30 118102

[1] Yamazaki S, Hirohashi T, Takahashi M, Adachi S, Tsubuku M, Koezuka J, Okazaki K, Kanzaki Y, Matsukizono H, Kaneko S, Mori S and Matsuo T 2014 Journal of the Society for Information Display 22 55
[2] Lu L and Wang M 2015 IEEE Trans. Electron Dev. 62 574
[3] Lu L, Li J, Feng Z, Kwok H and Wang M 2016 IEEE Electron Dev. Lett. 37 728
[4] Yang Y, Zhang D, Wang M, Lu L and Wong M 2018 IEEE Electron Dev. Lett. 39 707
[5] Chen T, Chang T C, Tsai C T, Hsieh T Y, Chen S C, Lin C S, Hung M C, Tu C H, Chang J J and Chen P L 2010 Appl. Phys. Lett. 97 112104
[6] Tang L, Yu G, Lu H, Wu C, Qian H, Zhou D, Zhang R, Zheng Y and Huang X 2015 Chin. Phys. B 24 088504
[7] Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502
[8] Li S, Wang M, Zhang D, Wang H and Shan Q 2019 IEEE J. Electron Dev. Soc. 7 1063
[9] Gosain D P and Tanaka T 2009 Jpn. J. Appl. Phys. 48 03
[10] Li J, Lu L, Chen R, Kwok H and Wong M 2018 IEEE Trans. Electron Dev. 65 142
[11] Wang Y, Wang M, Zhang D and Wang H 2020 Chin. Phys. B 29 118101
[12] Tai Y, Liu H, Chan P and Chiu S 2018 IEEE Electron Dev. Lett. 39 696
[13] Meux A D J D, Bhoolokam A, Pourtois G, Genoe J and Heremans P 2017 Phys. Status Solidi A 214 1770131
[14] Lee J M, Cho I T, Lee J H and Kwon H I 2008 Appl. Phys. Lett. 93 093504
[15] Chiu C J, Shih S S, Weng W, Chang S, Hung Z D and Tsai T 2012 IEEE Photon. Technol. Lett. 24 1018
[16] Huang X, Wu C, Lu H, Re H and Xu Q 2012 Appl. Phys. Lett. 100 243505
[17] Lee J, Cho I, Lee J and Kwon H 2008 Appl. Phys. Lett. 93 093504
[18] Qi D, Zhang D and Wang M 2017 Chin. Phys. B 26 128101
[19] Janotti A and Walle C 2005 Appl. Phys. Lett. 87 122102
[20] Li G, Zhan R, Yang B, Liu C, Dong C, Lee C, Wu Y, Lu P, Deng S, Shieh H D and Xu N 2016 IEEE Trans. Electron Dev. 63 4309
[21] Billah M M and Jang J 2017 IEEE Electron Dev. Lett. 38 477

[1]	Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇). Chin. Phys. B, 2022, 31(8): 088101.
[2]	Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Chin. Phys. B, 2022, 31(12): 128105.
[3]	A systematic study of light dependency of persistent photoconductivity in a-InGaZnO thin-film transistors Yalan Wang(王雅兰), Mingxiang Wang(王明湘), Dongli Zhang(张冬利), and Huaisheng Wang(王槐生). Chin. Phys. B, 2020, 29(11): 118101.
[4]	Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors Chao-Yang Han(韩朝阳), Yuan Liu(刘远), Yu-Rong Liu(刘玉荣), Ya-Yi Chen(陈雅怡), Li Wang(王黎), Rong-Sheng Chen(陈荣盛). Chin. Phys. B, 2019, 28(8): 088502.
[5]	Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯). Chin. Phys. B, 2018, 27(4): 048504.
[6]	Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌). Chin. Phys. B, 2017, 26(9): 097401.
[7]	Review of flexible and transparent thin-film transistors based on zinc oxide and related materials Yong-Hui Zhang(张永晖), Zeng-Xia Mei(梅增霞), Hui-Li Liang(梁会力), Xiao-Long Du(杜小龙). Chin. Phys. B, 2017, 26(4): 047307.
[8]	Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy Chen-Fei Wu(武辰飞), Yun-Feng Chen(陈允峰), Hai Lu(陆海), Xiao-Ming Huang(黄晓明), Fang-Fang Ren(任芳芳), Dun-Jun Chen(陈敦军), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Chin. Phys. B, 2016, 25(5): 057306.
[9]	Characteristics of cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction tunneling field-effect transistors Yun-He Guan(关云鹤), Zun-Chao Li(李尊朝), Dong-Xu Luo(骆东旭), Qing-Zhi Meng(孟庆之), Ye-Fei Zhang(张也非). Chin. Phys. B, 2016, 25(10): 108502.
[10]	Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明). Chin. Phys. B, 2015, 24(7): 077307.
[11]	Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇). Chin. Phys. B, 2015, 24(3): 037303.
[12]	Positive gate-bias temperature instability of ZnO thin-film transistor Liu Yu-Rong (刘玉荣), Su Jing (苏晶), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河). Chin. Phys. B, 2014, 23(6): 068501.
[13]	Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor Chen Yong-Yue (陈勇跃), Wang Xiong (王雄), Cai Xi-Kun (才玺坤), Yuan Zi-Jian (原子健), Zhu Xia-Ming (朱夏明), Qiu Dong-Jiang (邱东江), Wu Hui-Zhen (吴惠桢). Chin. Phys. B, 2014, 23(2): 026101.
[14]	Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇). Chin. Phys. B, 2013, 22(3): 038501.
[15]	The effect of annealing temperature and film thickness on the phase of pentacene on the p⁺-Si substrate Yuan Guang-Cai(袁广才), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Huang Jin-Zhao(黄金昭), Huang Jin-Ying (黄金英), Tian Xue-Yan(田雪雁), and Xu Xu-Rong (徐叙瑢). Chin. Phys. B, 2008, 17(10): 3822-3826.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

Cite this article:

Online attention