Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

doi:10.1088/1674-1056/25/2/027701

Abstract Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D_it) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.

Keywords: trap-assisted tunneling (TAT) tunnel field-effect transistors (TFETs) optical phonon scattering (OP) acoustic phonon scattering (AP)

Received: 07 July 2015
Revised: 03 November 2015
Accepted manuscript online:

PACS:	77.22.Jp	(Dielectric breakdown and space-charge effects)
	77.55.df	(For silicon electronics)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Corresponding Authors: Zhi Jiang
E-mail: zjiang@xidian.edu.cn

Cite this article:

Zhi Jiang(蒋智), Yi-Qi Zhuang(庄奕琪), Cong Li(李聪), Ping Wang(王萍), Yu-Qi Liu(刘予琪) Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor 2016 Chin. Phys. B 25 027701

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Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

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