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Chin. Phys. B, 2014, Vol. 23(4): 046805    DOI: 10.1088/1674-1056/23/4/046805
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Two crucial factors influencing quality of GaAs on Ge substrate

Deng Chuanga b, Men Chuan-Linga, Chen Dab
a School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;
b State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China
Abstract  High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a (100) 6° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.
Keywords:  molecular beam epitaxy      low temperature annealing      low temperature epitaxy  
Received:  07 August 2013      Revised:  04 October 2013      Accepted manuscript online: 
PACS:  68.35.Fx (Diffusion; interface formation)  
  68.35.Ja (Surface and interface dynamics and vibrations)  
  68.35.Md (Surface thermodynamics, surface energies)  
Fund: Project supported by the Shanghai Municipal Natural Science Foundation, China (Grant No. 13ZR1428200).
Corresponding Authors:  Men Chuan-Ling     E-mail:  anziloveling@126.com
About author:  68.35.Fx; 68.35.Ja; 68.35.Md

Cite this article: 

Deng Chuang, Men Chuan-Ling, Chen Da Two crucial factors influencing quality of GaAs on Ge substrate 2014 Chin. Phys. B 23 046805

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