Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films

doi:10.1088/1674-1056/23/2/027702

Abstract In this work, the resistive switching behaviors of ferroelectrictric BaTiO₃/La_0.67Sr_0.33MnO₃ heterostructures deposited by pulsed laser deposition are investigated. The BaTiO₃ films show both well-established P–E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (V_max). At a V_max of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a V_max of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I–V curve fitting.

Keywords: ferroelectrics resistive switching RRAM pulsed laser deposition

Received: 26 March 2013
Revised: 06 May 2013
Accepted manuscript online:

PACS:	77.84.-s	(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
	77.80.-e	(Ferroelectricity and antiferroelectricity)
	73.50.-h	(Electronic transport phenomena in thin films)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51072061, 51031004, and 51272078), the Program for Changjiang Scholars and Innovative Research Team in University, and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Corresponding Authors: Gao Xing-Sen, Liu Jun-Ming
E-mail: xingsengao@scnu.edu.cn;liujm@nju.edu.cn

About author: 77.84.-s; 77.80.-e; 73.50.-h; 72.20.-i

Cite this article:

Zhang Fei (张飞), Lin Yuan-Bin (林远彬), Wu Hao (吴昊), Miao Qing (苗青), Gong Ji-Jun (巩纪军), Chen Ji-Pei (陈继培), Wu Su-Juan (吴素娟), Zeng Min (曾敏), Gao Xing-Sen (高兴森), Liu Jun-Ming (刘俊明) Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films 2014 Chin. Phys. B 23 027702

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Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films

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Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO₃ thin films