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Chin. Phys. B, 2014, Vol. 23(4): 047803    DOI: 10.1088/1674-1056/23/4/047803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Strong and broadband terahertz absorber using SiO2-based metamaterial structure

Mo Man-Mana, Wen Qi-Yea, Chen Zhib, Yang Qing-Huia, Qiu Dong-Honga, Li Shenga, Jing Yu-Lana, Zhang Huai-Wua
a State Key Laboratory of Electronic Films and Integrated Devices, University of ElectronicScience and Technology of China, Chengdu 610054, China;
b National Key Laboratory of Science and Technology of Communication. University of ElectronicScience and Technology of China, Chengdu 610054, China
Abstract  We design and experimentally demonstrate a broadband metamaterial absorber in the terahertz (THz) band based on a periodic array of aluminum (Al) squares with two different sizes. A thin silicon dioxide (SiO2) film rather than a conventional polyimide (PI) layer is used as a dielectric spacer to separate Al squares from the platinum (Pt) ground plane in our design, which significantly improves the design precision and the feasibility of the device fabrication. The combination of different sizes of Al squares gives rise to an absorption bandwidth of over 210 GHz with an absorption of over 90%. Our results also show that our device is almost polarization-insensitive. It works very well for all azimuthal angles with an absorption of beyond 80%.
Keywords:  terahertz      metamaterials      absorption      broadband  
Received:  08 August 2013      Revised:  23 August 2013      Accepted manuscript online: 
PACS:  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
  77.22.Ch (Permittivity (dielectric function))  
  78.47.-p (Spectroscopy of solid state dynamics)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61131005), the KeyProject of the Chinese Ministry of Education (Grant No. 313013), the New Century Excellent Talent Foundation, China (Grant No. NCET-11-0068), the Sichuan Youth Science and Technology Foundation, China (Grant No. 2011JQ0001), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110185130002), and the THz Science and Technology Foundation from the China Academy of Engineering Physics, China (Grant No. CAEPTHZ201207).
Corresponding Authors:  Wen Qi-Ye     E-mail:  qywen@uestc.edu.cn;qywen@163.com
About author:  78.20.Ci; 77.22.Ch; 78.47.-p

Cite this article: 

Mo Man-Man, Wen Qi-Ye, Chen Zhi, Yang Qing-Hui, Qiu Dong-Hong, Li Sheng, Jing Yu-Lan, Zhang Huai-Wu Strong and broadband terahertz absorber using SiO2-based metamaterial structure 2014 Chin. Phys. B 23 047803

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