Effect of charge order transition on tunneling resistance in Pr0.6Ca0.4MnO3/Nb-doped SrTiO3 heterojunction

doi:10.1088/1674-1056/23/5/057202

Abstract An oxide p-n heterojunction composed of Pr_0.6Ca_0.4MnO₃ film, with a charge order (CO) transition, and 1wt% Nb-doped SrTiO₃ substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference.

Keywords: manganite heterojunction tunneling charge order transition

Received: 17 October 2013
Revised: 29 November 2013
Accepted manuscript online:

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Gk	(Tunneling)
	73.40.Ei	(Rectification)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

Corresponding Authors: Wang Deng-Jing
E-mail: d.j.wang@163.com

About author: 72.20.-i; 73.40.Lq; 73.40.Gk; 73.40.Ei

Cite this article:

Wang Deng-Jing (王登京), Ma Jun-Jie (马俊杰), Wang Mei (王妹), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction 2014 Chin. Phys. B 23 057202

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Effect of charge order transition on tunneling resistance in Pr0.6Ca0.4MnO3/Nb-doped SrTiO3 heterojunction

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Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction