Chinese Physics B 2011 author index
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
M
Men Cong
Ma Hong-An
Ma Xiao-Hua
Ma Xiao-Hua
Jiao Ying
Ma Ping
He Qiang
Ma Ji-Gang
Zhang Kai
Zhang Hui-Long
Zhang Jin-Cheng
Hao Yue
The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses
Chin. Phys. B. 2011, 20 (12):127305
doi: 10.1088/1674-1056/20/12/127305
Liu Li
Yang Yin-Tang
Ma Xiao-Hua
The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al2O3 as the gate dielectric
Chin. Phys. B. 2011, 20 (12):127204
doi: 10.1088/1674-1056/20/12/127204
Yang Li-Yuan
Hao Yue
Ma Xiao-Hua
Zhang Jin-Cheng
Pan Cai-Yuan
Ma Ji-Gang
Zhang Kai
Ma Ping
High temperature characteristics of AlGaN/GaN high electron mobility transistors
Chin. Phys. B. 2011, 20 (11):117302
doi: 10.1088/1674-1056/20/11/117302
Ma Xiao-Hua
Ma Ping
Jiao Ying
Yang Li-Yuan
Ma Ji-Gang
He Qiang
Jiao Sha-Sha
Zhang Jin-Cheng
Hao Yue
Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
Chin. Phys. B. 2011, 20 (9):97302
doi: 10.1088/1674-1056/20/9/097302
Mao Wei
Yang Cui
Hao Yue
Ma Xiao-Hua
Wang Chong
Zhang Jin-Cheng
Liu Hong-Xia
Bi Zhi-Wei
Xu Sheng-Rui
Yang Lin-An
Yang Ling
Zhang Kai
Zhang Nai-Qian
Pei Yi
The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT
Chin. Phys. B. 2011, 20 (9):97203
doi: 10.1088/1674-1056/20/9/097203
Bi Zhi-Wei
Hu Zhen-Hua
Mao Wei
Hao Yue
Feng Qian
Cao Yan-Rong
Gao Zhi-Yuan
Zhang Jin-Cheng
Ma Xiao-Hua
Chang Yong-Ming
Li Zhi-Ming
Mei Nan
Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study
Chin. Phys. B. 2011, 20 (8):87307
doi: 10.1088/1674-1056/20/8/087307
Ma Xiao-Hua
Ma Ji-Gang
Yang Li-Yuan
He Qiang
Jiao Ying
Ma Ping
Hao Yue
Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress
Chin. Phys. B. 2011, 20 (6):67304
doi: 10.1088/1674-1056/20/6/067304
Quan Si
Hao Yue
Ma Xiao-Hua
Yu Hui-You
Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor
Chin. Phys. B. 2011, 20 (5):58501
doi: 10.1088/1674-1056/20/5/058501
Ma Xiao-Hua
Cao Yan-Rong
Hao Yue
Zhang Yue
Hot carrier injection degradation under dynamic stress
Chin. Phys. B. 2011, 20 (3):37305
doi: 10.1088/1674-1056/20/3/037305
Ma Xiao-Hua
Pan Cai-Yuan
Yang Li-Yuan
Yu Hui-You
Yang Ling
Quan Si
Wang Hao
Zhang Jin-Cheng
Hao Yue
Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths
Chin. Phys. B. 2011, 20 (2):27304
doi: 10.1088/1674-1056/20/2/027304
Ma Xiao-Hua
Yu Hui-You
Quan Si
Yang Li-Yuan
Pan Cai-Yuan
Yang Ling
Wang Hao
Zhang Jin-Cheng
Hao Yue
Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier
Chin. Phys. B. 2011, 20 (2):27303
doi: 10.1088/1674-1056/20/2/027303
Quan Si
Hao Yue
Ma Xiao-Hua
Yu Hui-You
Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis
Chin. Phys. B. 2011, 20 (1):18101
doi: 10.1088/1674-1056/20/1/018101
Mao Wei
Yang Cui
Hao Yao
Zhang Jin-Cheng
Liu Hong-Xia
Bi Zhi-Wei
Xu Sheng-Rui
Xue Jun-Shuai
Ma Xiao-Hua
Wang Chong
Yang Lin-An
Zhang Jin-Feng
Kuang Xian-Wei
Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT
Chin. Phys. B. 2011, 20 (1):17203
doi: 10.1088/1674-1056/20/1/017203
Ma Ping
Ma Ji-Gang
Min Wen-Jing
Meng Qing-Kun
Mi Jian-Chun
Mi Xian-Wu
Ma Jie
Meng Qing-Tian
Ma Tie-Dong
Ma Xiao-Yi
Mahdi Pourgholi
Ma Zheng-Hua
Ma Ya-Jun
Ma Song-She
Meng Fan-Wei
Ma Jia-Sai
Mao You-Xin
Ma Yan-Xing
M.J. Park
Mei Dong-Cheng
Mei Feng
Mi Yuan-Yuan
Ma Jun-Cai
Ma Zhi-Hua
Mei Cui-Yu
Mei Feng-Xiang
Ma Jian-Yong
Min Fu-Hong
Ma Chen-Yue
Ma Fu-Hua
Mao Wei
Meng Ling-Guo
Mohammad Pourmahmood Aghababa
Ma Shou-Feng
Mona Mirheydari
Miao Hui
Meng Dong-Dong
Ma Zi-Wei
M. Belaiche
M. Loulidi
Ma Sheng-Can
Mei Nan
Ma Qing-Yu
Ma Yuan-Liang
Ma Qing-Hua
Meng Shao-Ying
Miao Long
M. Syed Ali
Ma Yi-Zhun
Mei Jie
Mao Xiang-Yu
Ma Nan
Mohamed I. A. Othman
Mu Qing-Xia
M. Ghorannevis
Ma Xiao-Dong
Mo Jia-Qi
Ma Xiao-Juan
Ma Xiao-Guang
M. Latroche
Mei Zeng-Xia
Meng Xian-Quan
Mustafa Keskin
Ma Song-Hua
Ma Jian-Li
Muhammad Javed Akhtar
Miao Xue-Fei
Miao Ting-Ting
Ma Wei-Gang
Ma Jiao-Min
Ma Li
Meng Xian-Zhu
Ma Jian
Mushajiang Yaermaimaiti
Meng Xiang-Guo
Ma Ting-Feng
Miao Quan
Muhammad Tariq Saeed
Miao Qing-Ying
Murks Aleksandra
Men Zhi-Wei
Ma Jia-Ning
Ma Lei
Ma Hua
Ma Jian-Guo
Ma Peng-Fei
Ma Jing-Feng
Ma Wen-Jun
Ma Ji
Meng Li-Min
Ma Song-Shan
M. G. Kong
Ma Long-Sheng
Miao Qing