Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths

doi:10.1088/1674-1056/20/2/027304

Abstract In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal--insulator--semiconductor (MIS) high electron mobility transistors (HEMTs), we demonstrate better performances of recessed-gate Al₂O₃ MIS-HEMTs which are fabricated by Fluorine-based Si₃N₄ etching and chlorine-based AlGaN etching with three etching times (15 s, 17 s and 19 s). The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of AlGaN/GaN HEMT. Through the recessed-gate etching, the transconductance increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with $\tau$_it=(0.20-1.59) μs and D_it=(0.55-1.08)×10¹² cm^-2·eV^-1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AlGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time (15 s in this paper) can enhance the performances of MIS-HEMTs effectively.

Keywords: AlGaN/GaN gate-recessed MIS-HEMT frequency-dependent capacitance and conductance drain current injection technique knee resistance

Received: 14 August 2010
Revised: 20 October 2010
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), and the National Natural Science Foundation of China (Grant No. 60736033).

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Ma Xiao-Hua(马晓华), Pan Cai-Yuan(潘才渊), Yang Li-Yuan(杨丽媛), Yu Hui-You(于惠游), Yang Ling(杨凌), Quan Si(全思), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) Characterization of Al₂O₃/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths 2011 Chin. Phys. B 20 027304

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Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths

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Characterization of Al₂O₃/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths