Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

doi:10.1088/1674-1056/20/7/077303

Abstract By using temperature-dependent Hall, variable-frequency capacitance—voltage and cathodoluminescence (CL) measurements, the identification of inductively coupled plasma (ICP)-induced defect states around the Al_xGa_{1 - x}N/GaN heterointerface and their elimination by subsequent annealing in Al_xGa_{1 - x}N/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75 × 10¹² cm^{- 2}·eV^{- 1}. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N₂ ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.

Keywords: inductively coupled plasma subsequent annealing defect state

Received: 30 November 2010
Revised: 25 March 2011
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.20.Hb	(Impurity and defect levels; energy states of adsorbed species)
	73.20.At	(Surface states, band structure, electron density of states)
	73.50.Dn	(Low-field transport and mobility; piezoresistance)

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Lin Fang(林芳), Shen Bo(沈波), Lu Li-Wu(卢励吾), Liu Xin-Yu(刘新宇), Wei Ke(魏珂), Xu Fu-Jun(许福军), Wang Yan(王彦), Ma Nan(马楠), and Huang Jun(黄俊) Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_{1 - x}N/GaN heterostructures 2011 Chin. Phys. B 20 077303

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Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

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Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_{1 - x}N/GaN heterostructures