Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

doi:10.1088/1674-1056/20/2/027303

Abstract An enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMTs) was fabricated with 15-nm AlGaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around -1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs (-3.5 V). Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-μm gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/mm, respectively. Compared with the 22-nm barrier E-mode devices, V_T of the thin barrier HEMTs is much more stable under the gate step-stress.

Keywords: high electron mobility transistors AlGaN/GaN thin barrier fluorine plasma treatment threshold voltage

Received: 14 August 2010
Revised: 09 October 2010
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033) and the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002).

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Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier 2011 Chin. Phys. B 20 027303

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Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

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