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Other articles related with "silicon-on-insulator"：
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98501 |
Yi-Fan Li(李逸帆), Tao Ni(倪涛), Xiao-Jing Li(李晓静), Juan-Juan Wang(王娟娟), Lin-Chun Gao(高林春), Jian-Hui Bu(卜建辉), Duo-Li Li(李多力), Xiao-Wu Cai(蔡小五), Li-Da Xu(许立达), Xue-Qin Li(李雪勤), Run-Jian Wang(王润坚), Chuan-Bin Zeng(曾传滨), Bo Li(李博), Fa-Zhan Zhao(赵发展), Jia-Jun Luo(罗家俊), and Zheng-Sheng Han(韩郑生) |
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Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process |
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Chin. Phys. B
2023 Vol.32 (9): 98501-098501
[Abstract]
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28505 |
Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成) |
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Impact of STI indium implantation on reliability of gate oxide |
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Chin. Phys. B
2022 Vol.31 (2): 28505-028505
[Abstract]
(319)
[HTML 0 KB]
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(88)
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28501 |
Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣) |
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Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor |
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Chin. Phys. B
2020 Vol.29 (2): 28501-028501
[Abstract]
(546)
[HTML 1 KB]
[PDF 515 KB]
(201)
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128501 |
Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) |
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Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET |
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Chin. Phys. B
2018 Vol.27 (12): 128501-128501
[Abstract]
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(141)
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48503 |
Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) |
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Research on the radiation hardened SOI devices with single-step Si ion implantation |
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Chin. Phys. B
2018 Vol.27 (4): 48503-048503
[Abstract]
(876)
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[PDF 1624 KB]
(268)
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28501 |
Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选) |
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Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation |
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Chin. Phys. B
2018 Vol.27 (2): 28501-028501
[Abstract]
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(351)
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96103 |
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展) |
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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin |
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Chin. Phys. B
2017 Vol.26 (9): 96103-096103
[Abstract]
(656)
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[PDF 432 KB]
(302)
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36103 |
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情) |
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Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs |
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Chin. Phys. B
2017 Vol.26 (3): 36103-036103
[Abstract]
(660)
[HTML 1 KB]
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(418)
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17701 |
Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才) |
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A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer |
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Chin. Phys. B
2017 Vol.26 (1): 17701-017701
[Abstract]
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118503 |
Kai Lu(吕凯), Jing Chen(陈静), Yuping Huang(黄瑜萍), Jun Liu(刘军), Jiexin Luo(罗杰馨), Xi Wang(王曦) |
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Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures |
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Chin. Phys. B
2016 Vol.25 (11): 118503-118503
[Abstract]
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(307)
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78501 |
Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊) |
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Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices |
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Chin. Phys. B
2016 Vol.25 (7): 78501-078501
[Abstract]
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(513)
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36103 |
Pengcheng Huang(黄鹏程), Shuming Chen(陈书明), Jianjun Chen(陈建军) |
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Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology |
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Chin. Phys. B
2016 Vol.25 (3): 36103-036103
[Abstract]
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27305 |
Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波) |
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Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance |
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Chin. Phys. B
2016 Vol.25 (2): 27305-027305
[Abstract]
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(379)
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88501 |
Lü Kai (吕凯), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), He Wei-Wei (何伟伟), Huang Jian-Qiang (黄建强), Chai Zhan (柴展), Wang Xi (王曦) |
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Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs |
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Chin. Phys. B
2015 Vol.24 (8): 88501-088501
[Abstract]
(518)
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[PDF 291 KB]
(385)
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36801 |
Sun Gao-Di (孙高迪), Dong Lin-Xi (董林玺), Xue Zhong-Ying (薛忠营), Chen Da (陈达), Guo Qing-Lei (郭庆磊), Mu Zhi-Qiang (母志强) |
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Strain analysis of free-standing strained silicon-on-insulator nanomembrane |
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Chin. Phys. B
2015 Vol.24 (3): 36801-036801
[Abstract]
(657)
[HTML 0 KB]
[PDF 439 KB]
(536)
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114206 |
Yang Biao (杨彪), Li Zhi-Yong (李智勇), Yu Yu-De (俞育德), Yu Jin-Zhong (余金中) |
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High-efficiency focusing grating coupler with optimized ultra-short taper |
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Chin. Phys. B
2014 Vol.23 (11): 114206-114206
[Abstract]
(612)
[HTML 1 KB]
[PDF 302 KB]
(490)
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93201 |
Liu Li (刘力), Yang Ting (杨婷), Dong Jian-Ji (董建绩) |
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Microwave photonic filter with a continuously tunable central frequency using an SOI high-Q microdisk resonator |
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Chin. Phys. B
2014 Vol.23 (9): 93201-093201
[Abstract]
(609)
[HTML 1 KB]
[PDF 419 KB]
(560)
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67101 |
Hu Sheng-Dong (胡盛东), Wu Xing-He (武星河), Zhu Zhi (朱志), Jin Jing-Jing (金晶晶), Chen Yin-Hui (陈银晖) |
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Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer |
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Chin. Phys. B
2014 Vol.23 (6): 67101-067101
[Abstract]
(592)
[HTML 1 KB]
[PDF 1752 KB]
(609)
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108501 |
Wu Qing-Qing (伍青青), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), Lü Kai (吕凯), Yu Tao (余涛), Chai Zhan (柴展), Wang Xi (王曦) |
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Gate-to-body tunneling current model for silicon-on-insulator MOSFETs |
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Chin. Phys. B
2013 Vol.22 (10): 108501-108501
[Abstract]
(651)
[HTML 1 KB]
[PDF 267 KB]
(552)
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67306 |
Zhou Kun (周坤), Luo Xiao-Rong (罗小蓉), Fan Yuan-Hang (范远航), Luo Yin-Chun (罗尹春), Hu Xia-Rong (胡夏融), Zhang Bo (张波) |
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A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS |
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Chin. Phys. B
2013 Vol.22 (6): 67306-067306
[Abstract]
(724)
[HTML 1 KB]
[PDF 938 KB]
(779)
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47701 |
Zheng Zhi (郑直), Li Wei (李威), Li Ping (李平) |
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Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect |
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Chin. Phys. B
2013 Vol.22 (4): 47701-047701
[Abstract]
(778)
[HTML 1 KB]
[PDF 967 KB]
(794)
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27303 |
Luo Xiao-Rong (罗小蓉), Wang Qi (王琦), Yao Guo-Liang (姚国亮), Wang Yuan-Gang (王元刚), Lei Tian-Fei (雷天飞), Wang Pei (王沛), Jiang Yong-Heng (蒋永恒), Zhou Kun (周坤), Zhang Bo (张波) |
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A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch |
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Chin. Phys. B
2013 Vol.22 (2): 27303-027303
[Abstract]
(775)
[HTML 1 KB]
[PDF 809 KB]
(833)
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24212 |
Qiu Chao (仇超), Sheng Zhen (盛振), Li Le (李乐), Albert Pang (彭树根), Wu Ai-Min (武爱民), Wang Xi (王曦), Zou Shi-Chang (邹世昌), Gan Fu-Wan (甘甫烷) |
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High efficiency grating couplers based on shared process with CMOS MOSFETs |
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Chin. Phys. B
2013 Vol.22 (2): 24212-024212
[Abstract]
(834)
[HTML 1 KB]
[PDF 274 KB]
(638)
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27304 |
Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Gang-Yi (胡刚毅), Wang Xiao-Wei (王骁玮), Zhang Zheng-Yuan (张正元), Fan Yuan-Hang (范远航), Cai Jin-Yong (蔡金勇), Wang Pei (王沛), Zhou Kun (周坤) |
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A low specific on-resistance SOI MOSFET with dual gates and recessed drain |
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Chin. Phys. B
2013 Vol.22 (2): 27304-027304
[Abstract]
(873)
[HTML 1 KB]
[PDF 684 KB]
(734)
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116104 |
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Yu Fang (于芳), Li Ning (李宁 ) |
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Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide |
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Chin. Phys. B
2012 Vol.21 (11): 116104-116104
[Abstract]
(1044)
[HTML 1 KB]
[PDF 628 KB]
(531)
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74203 |
Xiong Kang(熊康), Xiao Xi(肖希), Hu Ying-Tao(胡应涛), Li Zhi-Yong(李智勇), Chu Tao(储涛), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中) |
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Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits |
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Chin. Phys. B
2012 Vol.21 (7): 74203-074203
[Abstract]
(1561)
[HTML 1 KB]
[PDF 2333 KB]
(1162)
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66105 |
Qin Xi-Feng(秦希峰), Li Hong-Zhen(李洪珍), Li Shuang(李双), Ji Zi-Wu(冀子武), Wang Hui-Ning(王绘凝), Wang Feng-Xiang(王凤翔), and Fu Gang(付刚) |
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Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature |
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Chin. Phys. B
2012 Vol.21 (6): 66105-066105
[Abstract]
(1321)
[HTML 1 KB]
[PDF 119 KB]
(542)
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47303 |
Zhang Jian(张健), He Jin(何进), Zhou Xing-Ye(周幸叶), Zhang Li-Ning(张立宁), Ma Yu-Tao(马玉涛), Chen Qin(陈沁), Zhang Xu-Kai(张勖凯), Yang Zhang(杨张), Wang Rui-Fei(王睿斐), HanYu(韩雨), and Chan Mansun(陈文新) |
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A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel |
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Chin. Phys. B
2012 Vol.21 (4): 47303-047303
[Abstract]
(1348)
[HTML 1 KB]
[PDF 303 KB]
(710)
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27101 |
Hu Sheng-Dong(胡盛东), Wu Li-Juan(吴丽娟), Zhou Jian-Lin(周建林), Gan Ping(甘平), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer |
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Chin. Phys. B
2012 Vol.21 (2): 27101-027101
[Abstract]
(1191)
[HTML 1 KB]
[PDF 580 KB]
(636)
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98501 |
Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊) |
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A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects |
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Chin. Phys. B
2011 Vol.20 (9): 98501-098501
[Abstract]
(1478)
[HTML 0 KB]
[PDF 140 KB]
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74212 |
Zhou Liang(周亮), Li Zhi-Yong(李智勇), Hu Ying-Tao(胡应涛), Xiong Kang(熊康), Fan Zhong-Chao(樊中朝), Han Wei-Hua(韩伟华), Yu Yu-De (俞育德), and Yu Jin-Zhong (余金中) |
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CMOS compatible highly efficient grating couplers with a stair-step blaze profile |
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Chin. Phys. B
2011 Vol.20 (7): 74212-074212
[Abstract]
(1369)
[HTML 1 KB]
[PDF 595 KB]
(848)
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58503 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Qu Jiang-Tao(屈江涛) |
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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator |
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Chin. Phys. B
2011 Vol.20 (5): 58503-058503
[Abstract]
(1303)
[HTML 0 KB]
[PDF 433 KB]
(950)
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58502 |
Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立) |
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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors |
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Chin. Phys. B
2011 Vol.20 (5): 58502-058502
[Abstract]
(1494)
[HTML 0 KB]
[PDF 468 KB]
(1261)
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28501 |
Luo Xiao-Rong(罗小蓉), Yao Guo-Liang(姚国亮), Chen Xi(陈曦), Wang Qi(王琦), Ge Rui(葛瑞), and Florin Udrea |
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Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch |
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Chin. Phys. B
2011 Vol.20 (2): 28501-028501
[Abstract]
(1426)
[HTML 1 KB]
[PDF 1846 KB]
(2304)
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26802 |
Wang Chong(王茺), Yang Yu(杨宇), Yang Rui-Dong(杨瑞东), Li Liang(李亮), Xiong Fei(熊飞), and Bao Ji-Ming |
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Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure |
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Chin. Phys. B
2011 Vol.20 (2): 26802-026802
[Abstract]
(1545)
[HTML 1 KB]
[PDF 982 KB]
(730)
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108502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇) Li Yu-Chen(李妤晨), and Qu Jiang-Tao(屈江涛) |
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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator |
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Chin. Phys. B
2011 Vol.20 (10): 108502-108502
[Abstract]
(1448)
[HTML 0 KB]
[PDF 503 KB]
(963)
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104209 |
Ma Jian-Yong(麻健勇), Xu Cheng(许程), Qiang Ying-Huai(强颖怀), and Zhu Ya-Bo(朱亚波) |
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Broadband non-polarizing beam splitter based on guided mode resonance effect |
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Chin. Phys. B
2011 Vol.20 (10): 104209-104209
[Abstract]
(1473)
[HTML 1 KB]
[PDF 258 KB]
(688)
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10210 |
He Da-Wei(何大伟), Cheng Xin-Hong(程新红), Wang Zhong-Jian(王中健), Xu Da-Wei(徐大伟), Song Zhao-Rui(宋朝瑞), and Yu Yue-Hui(俞跃辉) |
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An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique |
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Chin. Phys. B
2011 Vol.20 (1): 10210-010210
[Abstract]
(1781)
[HTML 1 KB]
[PDF 978 KB]
(1858)
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84210 |
Xu Hai-Hua(徐海华), Huang Qing-Zhong(黄庆忠), Li Yun-Tao(李运涛), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中) |
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Sub-nanosecond optical switch based on silicon racetrack resonator |
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Chin. Phys. B
2010 Vol.19 (8): 84210-084210
[Abstract]
(1913)
[HTML 1 KB]
[PDF 462 KB]
(946)
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77306 |
Luo Xiao-Rong (罗小蓉), Wang Yuan-Gang (王元刚), Deng Hao (邓浩), Florin Udrea |
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A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer |
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Chin. Phys. B
2010 Vol.19 (7): 77306-077306
[Abstract]
(1484)
[HTML 1 KB]
[PDF 4242 KB]
(992)
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124214 |
Zhou Liang(周亮), Li Zhi-Yong(李智勇), and Zhu Yu(朱宇), Li Yun-Tao(李运涛), Fan Zhong-Cao(樊中朝), Han Wei-Hua(韩伟华), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中) |
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A novel highly efficient grating coupler with large filling factor used for optoelectronic integration |
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Chin. Phys. B
2010 Vol.19 (12): 124214-124214
[Abstract]
(1622)
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[PDF 1483 KB]
(1449)
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106106 |
Tang Hai-Ma(唐海马), Zheng Zhong-Shan(郑中山), Zhang En-Xia(张恩霞), Yu Fang(于芳), Li Ning(李宁), and Wang Ning-Juan(王宁娟) |
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Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers |
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Chin. Phys. B
2010 Vol.19 (10): 106106-106106
[Abstract]
(1382)
[HTML 1 KB]
[PDF 818 KB]
(770)
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14219 |
Zhu Yu(朱宇), Xu Xue-Jun(徐学俊), Li Zhi-Yong(李智勇), Zhou Liang(周亮), Han Wei-Hua(韩伟华),Fan Zhong-Chao(樊中朝),Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中) |
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High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre |
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Chin. Phys. B
2010 Vol.19 (1): 14219-014219
[Abstract]
(1499)
[HTML 1 KB]
[PDF 1604 KB]
(1351)
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3900 |
Xu Xue-Jun(徐学俊), Chen Shao-Wu(陈少武), Xu Hai-Hua (徐海华), Sun Yang(孙阳), Yu Yu-De(俞育德), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明) |
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High-speed 2×2 silicon-based electro-optic switch with nanosecond switch time |
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Chin. Phys. B
2009 Vol.18 (9): 3900-3904
[Abstract]
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[HTML 1 KB]
[PDF 1451 KB]
(996)
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2562 |
Huang Qing-Zhong(黄庆忠), Yu Jin-Zhong(余金中), Chen Shao-Wu(陈少武), Xu Xue-Jun(徐学俊), Han Wei-Hua(韩伟华), and Fan Zhong-Chao(樊中朝) |
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Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator |
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Chin. Phys. B
2008 Vol.17 (7): 2562-2566
[Abstract]
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228 |
Tang Hai-Xia(唐海侠), Zuo Yu-Hua(左玉华), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明) |
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A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator |
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Chin. Phys. B
2008 Vol.17 (1): 228-231
[Abstract]
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792 |
Zhang En-Xia (张恩霞), Qian Cong (钱聪), Zhang Zheng-Xuan (张正选), Lin Cheng-Lu (林成鲁), Wang Xi (王曦), Wang Ying-Min (王英民), Wang Xiao-He(王晓荷), Zhao Gui-Ru (赵桂茹), En Yun-Fei (恩云飞), Luo Hong-Wei (罗宏伟), Shi Qian (师谦) |
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Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation |
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Chin. Phys. B
2006 Vol.15 (4): 792-797
[Abstract]
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[PDF 325 KB]
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2751 |
Bu Wei-Hai(卜伟海), Huang Ru(黄如), Li Ming(黎明), Tian Yu(田豫), Wu Da-Ke(吴大可), Chan Man-Sun(陈文新), and Wang Yang-Yuan(王阳元) |
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Silicon-on-nothing MOSFETs fabricated with hydrogenand helium co-implantation |
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Chin. Phys. B
2006 Vol.15 (11): 2751-2755
[Abstract]
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