Abstract A 2×2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach--Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm × 340 nm. The measurement results show that the switch has a $V_{\pi}L_{\pi}$ figure of merit of 0.145 V$\cdot$cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.
Received: 26 December 2008
Revised: 27 March 2009
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60577044), the State
Key Development Program for Basic Research of China (Grant No
2007CB613405) and the National High Technology Research and
Development Program of China (Grant No 2006AA032424).
Cite this article:
Xu Xue-Jun(徐学俊), Chen Shao-Wu(陈少武), Xu Hai-Hua (徐海华), Sun Yang(孙阳), Yu Yu-De(俞育德), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明) High-speed 2×2 silicon-based electro-optic switch with nanosecond switch time 2009 Chin. Phys. B 18 3900
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