Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

doi:10.1088/1674-1056/21/6/066105

Abstract The annealing behaviour of 400 keV Er ions at a fluence of 2 × 10¹⁵ cm^-2 implanted into silicon-on-insulator (SOI) samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He²⁺ ions with a multiple scattering model. It is found that the damage close to the SOI surface is almost removed after being annealed in O₂ and N₂ atmospheres, successively, at 900 ℃, and that only a small number of the Er atoms segregated to the surface of the SOI sample, whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen. For the SOI sample co-implanted with Er and O ions, there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N₂ atmosphere at 900 ℃.

Keywords: Er ion implantation silicon-on-insulator annealing behavior Rutherford backscattering technique

Received: 08 October 2011
Revised: 02 November 2011
Accepted manuscript online:

PACS:	61.80.Jh	(Ion radiation effects)
	61.72.sh	(Impurity distribution)
	82.80.Yc	(Rutherford backscattering (RBS), and other methods ofchemical analysis)
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)

Fund: Project supported by the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2011AM011 and ZR2009FM031), the National Natural Science Foundation of China (Grant No. 11005070), and the Science and Technology Item of Shandong Provincial Housing and Urban-Rural Construction Department, China (Grant No. 2011YK033).

Corresponding Authors: Fu Gang
E-mail: xfqin@sdjzu.edu.cn

Cite this article:

Qin Xi-Feng(秦希峰), Li Hong-Zhen(李洪珍), Li Shuang(李双), Ji Zi-Wu(冀子武), Wang Hui-Ning(王绘凝), Wang Feng-Xiang(王凤翔), and Fu Gang(付刚) Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 2012 Chin. Phys. B 21 066105

[1]	Hansson G V, Du W X, Elfving A and Duteil F 2001 Appl. Phys. Lett. 78 2104
[2]	Qin X F, Chen M, Wang X L, Liang Y and Zhang S M 2010 Chin. Phys. B 19 113403
[3]	Wang J Z, Shi Z Q, Lou H N, Zhang X L, Zuo Z W, Pu L, Ma E, Zhang R, Zheng Y L, Lu F and Shi Y 2009 Acta Phys. Sin. 58 4243 (in Chinese)
[4]	Yang Y T, Han R and Wang P 2008 Chin. Phys. B 17 3459
[5]	Qin X F, Wang F X, Liang Y, Fu G and Zhao Y M 2010 Acta Phys. Sin. 59 6382 (in Chinese)
[6]	Ding W C, Liu Y, Zhang Y, Guo J C, Zuo Y H, Cheng B W, Yu J Z and Wang Q M 2009 Chin. Phys. B 18 3044
[7]	Qin X F, Ji Y J, Wang F X, Fu G and Zhao Y M 2009 J. Shandong Jianzhu University 24 212 (in Chinese)
[8]	Ennen H, Schneider J, Pomrenke G and Axmann A 1983 Appl. Phys. Lett. 43 943
[9]	Chen C Y, Chen W D, Wang Y Q, Song S F and Xu Z J 2003 Acta Phys. Sin. 52 736 (in Chinese)
[10]	Fu Y C, Li B S, Yang Y T, Zhang C H, Zhang H H and Zhou L H 2009 Acta Phys. Sin. 58 3302 (in Chinese)
[11]	Chen F, Tan Y and Rodenas A 2008 Opt. Express 16 16209
[12]	Hoven G N, Shin J H and Polman A 1995 J. Appl. Phys. 78 2642
[13]	Lei H B, Yang Q Q and Wang Q M 1998 Acta Phys. Sin. 47 1201 (in Chinese)
[14]	Tan N and Zhang Q Y 2006 Chin. Phys. 15 2165
[15]	Qin X F, Liang Y, Wang F X, Li S, Fu G and Ji Y J 2011 Acta Phys. Sin. 60 066101 (in Chinese)
[16]	Zheng B, Michel J and Ren F Y 1994 Appl. Phys. Lett. 64 2842
[17]	Custer J S, Polman A and Pinxteren H M 1994 J. Appl. Phys. 75 2809
[18]	Qin X F, Chen M, Wang X L, Fu G, Liang Y and Zhang S M 2010 Nucl. Instrum. Methods B 268 1585
[19]	Scalese S, Franzo G, Mirabella S, Re M, Terrasi A, Priolo F, Rimini E, Spinella C and Carnera A 2000 J. Appl. Phys. 88 4091
[20]	Davies J A, Denhartog J, Eriksson L and Mayer J W 1967 Can. J. Phys. 45 4053
[21]	Kozanecki A, Jeynes C, Sealy B J and Nejim A 1998 Nucl. Instrum. Methods B 136-138 1272

[1]	Impact of STI indium implantation on reliability of gate oxide Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Chin. Phys. B, 2022, 31(2): 028505.
[2]	Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣). Chin. Phys. B, 2020, 29(2): 028501.
[3]	Research on the radiation hardened SOI devices with single-step Si ion implantation Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(4): 048503.
[4]	Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选). Chin. Phys. B, 2018, 27(2): 028501.
[5]	Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(12): 128501.
[6]	Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展). Chin. Phys. B, 2017, 26(9): 096103.
[7]	Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情). Chin. Phys. B, 2017, 26(3): 036103.
[8]	A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才). Chin. Phys. B, 2017, 26(1): 017701.
[9]	Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊). Chin. Phys. B, 2016, 25(7): 078501.
[10]	Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology Pengcheng Huang(黄鹏程), Shuming Chen(陈书明), Jianjun Chen(陈建军). Chin. Phys. B, 2016, 25(3): 036103.
[11]	Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波). Chin. Phys. B, 2016, 25(2): 027305.
[12]	Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures Kai Lu(吕凯), Jing Chen(陈静), Yuping Huang(黄瑜萍), Jun Liu(刘军), Jiexin Luo(罗杰馨), Xi Wang(王曦). Chin. Phys. B, 2016, 25(11): 118503.
[13]	Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs Lü Kai (吕凯), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), He Wei-Wei (何伟伟), Huang Jian-Qiang (黄建强), Chai Zhan (柴展), Wang Xi (王曦). Chin. Phys. B, 2015, 24(8): 088501.
[14]	Strain analysis of free-standing strained silicon-on-insulator nanomembrane Sun Gao-Di (孙高迪), Dong Lin-Xi (董林玺), Xue Zhong-Ying (薛忠营), Chen Da (陈达), Guo Qing-Lei (郭庆磊), Mu Zhi-Qiang (母志强). Chin. Phys. B, 2015, 24(3): 036801.
[15]	Microwave photonic filter with a continuously tunable central frequency using an SOI high-Q microdisk resonator Liu Li (刘力), Yang Ting (杨婷), Dong Jian-Ji (董建绩). Chin. Phys. B, 2014, 23(9): 093201.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

Cite this article:

Online attention