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Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide |
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Yu Fang (于芳), Li Ning (李宁 ) |
Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China |
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Abstract Nitrogen ions of various doses are implanted into the buried oxide (BOX) of commercial silicon-on-insulator (SOI) materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by high frequency capacitance-voltage (C-V) technique after irradiation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C-V data, secondary ion mass spectrometry (SIMS), and Fourier transform infrared (FTIR) spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.
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Received: 30 March 2012
Revised: 03 May 2012
Accepted manuscript online:
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PACS:
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61.82.-d
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(Radiation effects on specific materials)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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61.72.U-
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(Doping and impurity implantation)
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Corresponding Authors:
Zheng Zhong-Shan
E-mail: zszheng513@163.com
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Cite this article:
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Yu Fang (于芳), Li Ning (李宁 ) Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide 2012 Chin. Phys. B 21 116104
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