INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Research on the radiation hardened SOI devices with single-step Si ion implantation |
Li-Hua Dai(戴丽华)1,2, Da-Wei Bi(毕大炜)2, Zhi-Yuan Hu(胡志远)2, Xiao-Nian Liu(刘小年)1,2, Meng-Ying Zhang(张梦映)1,2, Zheng-Xuan Zhang(张正选)2, Shi-Chang Zou(邹世昌)2 |
1. University of Chinese Academy of Sciences, Beijing 100049, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
|
|
Abstract Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal-oxide-semiconductor transistor (CMOS) process is used to harden the SOI wafer. The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods. The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly. The metastable electron traps introduced by Si implantation is also investigated by electrical stress. The results show that these traps are very instable, and electrons will tunnel into or out of the metastable electron traps quickly after hot-electron-injection or hot-hole-injection.
|
Received: 07 November 2017
Revised: 22 December 2017
Accepted manuscript online:
|
PACS:
|
85.30.Tv
|
(Field effect devices)
|
|
61.80.Ed
|
(γ-ray effects)
|
|
85.40.Ry
|
(Impurity doping, diffusion and ion implantation technology)
|
|
Corresponding Authors:
Li-Hua Dai
E-mail: dailihua@mail.sim.ac.cn
|
Cite this article:
Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) Research on the radiation hardened SOI devices with single-step Si ion implantation 2018 Chin. Phys. B 27 048503
|
[1] |
Celler G K and Cristoloveanu S 2003 J. Appl. Phys. 93 4955
|
[2] |
Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, et al. 2003 IEEE Trans. Nucl. Sci. 50 522
|
[3] |
Roche P and Gasiot G 2014 IEEE Nuclear and Space Radiation Effects Conference, July 14, 2014, Paris, France, p. Ⅲ-33
|
[4] |
Stahlbush R E, Campisi G J, McKitterick J B, et al. 1992 IEEE Trans. Nucl. Sci. 39 2086
|
[5] |
Warren W L, Shaneyfelt M R, Schwank J R, et al. 1993 IEEE Trans. Nucl. Sci. 40 1755
|
[6] |
Liu S T, Balster S, Sinha S, et al. 1999 IEEE Trans. Nucl. Sci. 46 1817
|
[7] |
Mrstik B J, Hughes H L, Gouker P, et al. 2003 IEEE Trans. Nucl. Sci. 50 1947
|
[8] |
Mrstik B J, Hughes H L, McMarr P J, et al. 2001 Microelectron. Eng. 59 285
|
[9] |
Alles M L 2007 IEEE Nuclear and Space Radiation Effects Conference, July 23, 2007, Honolulu, Hawai'i, p. I-30
|
[10] |
Bi D W, Zhang Z X, Chen M, et al. 2012 Nucl. Instrum. Methods Phys. Res. B 272 257
|
[11] |
Huang H X, Bi D W, Chen M, et al. 2014 IEEE Trans. Nucl. Sci. 61 1400
|
[12] |
Schwank J R, Fleetwood D M, Xiong H D, et al. 2004 Microelectron. Eng. 72 362
|
[13] |
Liu Y, Chen H B, Liu Y R, et al. 2015 Chin. Phys. B 24 088503
|
[14] |
Bi D W, Zhang Z X, Zhang S, et al. 2009 Chin. Phys. C 33 866
|
[15] |
Zhang E X, Qian C, Zhang Z X, et al. 2006 Chin. Phys. 15 792
|
[16] |
Mrstik B J, Hughes H L, McMarr P J, et al. 2000 IEEE Trans. Nucl. Sci. 47 2189
|
[17] |
Huang H X, Huang Y Y, Zheng J C, et al. 2016 Microelectron. Rel. 57 1
|
[18] |
Chang Y W, Cheng S, Dai L H, et al. 2017 J. Vac. Sci. Technol. B 35 020603
|
[19] |
EIA/JEDEC Standard 35-A 2001 Electronics Industries Association (Washington, DC)
|
[20] |
Zhang E X, Yu Z S, Cao Y G, et al. 2008 J. Vac. Sci. Technol. A 26 L1
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|