Strain analysis of free-standing strained silicon-on-insulator nanomembrane

doi:10.1088/1674-1056/24/3/036801

Abstract Based on the ultra-thin strained silicon-on-insulator (sSOI) technology, by creatively using a hydrofluoric acid (HF) vapor corrosion system to dry etch the SiO₂ layer, a large area of suspended strained silicon (sSi) nanomembrane with uniform strain distribution is fabricated. The strain state in the implemented nanomembrane is comprehensively analyzed by using an UV-Raman spectrometer with different laser powers. The results show that the inherent strain is preserved while there are artificial Raman shifts induced by the heat effect, which is proportional to the laser power. The suspended sSOI nanomembrane will be an important material for future novel high-performance devices.

Keywords: dry etching strained silicon-on-insulator Raman spectrum strain

Received: 27 August 2014
Revised: 21 December 2014
Accepted manuscript online:

PACS:	68.35.Gy	(Mechanical properties; surface strains)
	61.72.uf	(Ge and Si)
	77.80.bn	(Strain and interface effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61376117 and 61107025) and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LY13F040004).

Corresponding Authors: Dong Lin-Xi
E-mail: donglinxi@hdu.edu.cn

Cite this article:

Sun Gao-Di (孙高迪), Dong Lin-Xi (董林玺), Xue Zhong-Ying (薛忠营), Chen Da (陈达), Guo Qing-Lei (郭庆磊), Mu Zhi-Qiang (母志强) Strain analysis of free-standing strained silicon-on-insulator nanomembrane 2015 Chin. Phys. B 24 036801

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Strain analysis of free-standing strained silicon-on-insulator nanomembrane

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