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Other articles related with "field-effect transistor"：
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48102 |
Liping Zhang(张丽萍), Zongyao Sun(孙宗耀), Jiani Li(李佳妮), and Junyan Su(苏俊燕) |
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Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors |
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Chin. Phys. B
2024 Vol.33 (4): 48102-048102
[Abstract]
(137)
[HTML 1 KB]
[PDF 690 KB]
(57)
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17305 |
Guang-Yu Zhu(祝光宇), Ji-Ai Ning(宁纪爱), Jian-Kun Wang(王建坤), Xin-Jie Liu(刘心洁), Jia-Jie Yang(杨佳洁), Ben-Chuan Lin(林本川), and Shuo Wang(王硕) |
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Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires |
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Chin. Phys. B
2024 Vol.33 (1): 17305-17305
[Abstract]
(110)
[HTML 1 KB]
[PDF 617 KB]
(55)
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108506 |
Yunhe Guan(关云鹤), Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟) |
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An accurate analytical surface potential model of heterojunction tunnel FET |
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Chin. Phys. B
2023 Vol.32 (10): 108506-108506
[Abstract]
(108)
[HTML 0 KB]
[PDF 1646 KB]
(44)
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108101 |
Xuerui Niu(牛雪锐), Bin Hou(侯斌), Meng Zhang(张濛), Ling Yang(杨凌), Mei Wu(武玫), Xinchuang Zhang(张新创), Fuchun Jia(贾富春), Chong Wang(王冲), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer |
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Chin. Phys. B
2023 Vol.32 (10): 108101-108101
[Abstract]
(146)
[HTML 0 KB]
[PDF 720 KB]
(138)
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108503 |
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Zhi-Feng Lei(雷志锋), Chao Peng(彭超), Wu-Ying Ma(马武英), Di Wang(王迪), Chang-Hao Sun(孙常皓), Feng-Qi Zhang(张凤祁), Zhan-Gang Zhang(张战刚), Ye Yang(杨业), Wei Lv(吕伟), Zhong-Ming Wang(王忠明), Xiang-Li Zhong(钟向丽), and Xiao-Ping Ouyang(欧阳晓平) |
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Proton induced radiation effect of SiC MOSFET under different bias |
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Chin. Phys. B
2023 Vol.32 (10): 108503-108503
[Abstract]
(124)
[HTML 0 KB]
[PDF 1463 KB]
(37)
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87701 |
Xiaoqing Sun(孙晓清), Hao Xu(徐昊), Junshuai Chai(柴俊帅), Xiaolei Wang(王晓磊), and Wenwu Wang(王文武) |
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Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack |
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Chin. Phys. B
2023 Vol.32 (8): 87701-087701
[Abstract]
(161)
[HTML 1 KB]
[PDF 716 KB]
(342)
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78504 |
Jiale Sun(孙佳乐), Yuming Zhang(张玉明), Hongliang Lu(吕红亮), Zhijun Lyu(吕智军),Yi Zhu(朱翊), Yuche Pan(潘禹澈), and Bin Lu(芦宾) |
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High on-state current p-type tunnel effect transistor based on doping modulation |
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Chin. Phys. B
2023 Vol.32 (7): 78504-078504
[Abstract]
(181)
[HTML 0 KB]
[PDF 663 KB]
(67)
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28504 |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平) |
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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation |
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Chin. Phys. B
2023 Vol.32 (2): 28504-028504
[Abstract]
(334)
[HTML 1 KB]
[PDF 1582 KB]
(149)
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18505 |
Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星) |
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A field-effect WSe2/Si heterojunction diode |
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Chin. Phys. B
2023 Vol.32 (1): 18505-018505
[Abstract]
(307)
[HTML 1 KB]
[PDF 1074 KB]
(173)
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126103 |
Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌) |
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Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs |
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Chin. Phys. B
2022 Vol.31 (12): 126103-126103
[Abstract]
(382)
[HTML 0 KB]
[PDF 2300 KB]
(71)
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68505 |
Zhaocong Huang(黄兆聪), Wenqing Liu(刘文卿), Jian Liang(梁健), Qingjie Guo(郭庆杰), Ya Zhai(翟亚), and Yongbing Xu(徐永兵) |
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Spin transport in epitaxial Fe3O4/GaAs lateral structured devices |
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Chin. Phys. B
2022 Vol.31 (6): 68505-068505
[Abstract]
(362)
[HTML 1 KB]
[PDF 1439 KB]
(148)
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78502 |
Xi-Kun Feng(冯希昆), Xiao-Feng Gu(顾晓峰), Qin-Ling Ma(马琴玲), Yan-Ni Yang(杨燕妮), and Hai-Lian Liang(梁海莲) |
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Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN |
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Chin. Phys. B
2021 Vol.30 (7): 78502-078502
[Abstract]
(432)
[HTML 1 KB]
[PDF 1964 KB]
(124)
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78503 |
Hui-Fang Xu(许会芳), Wen Sun(孙雯), and Na Wang(王娜) |
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Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance |
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Chin. Phys. B
2021 Vol.30 (7): 78503-078503
[Abstract]
(549)
[HTML 1 KB]
[PDF 601 KB]
(76)
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47401 |
Bin Wang(王斌), Xin-Long Shi(史鑫龙), Yun-Feng Zhang(张云峰), Yi Chen(陈伊), Hui-Yong Hu(胡辉勇), and Li-Ming Wang(王利明) |
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Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect |
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Chin. Phys. B
2021 Vol.30 (4): 47401-
[Abstract]
(532)
[HTML 1 KB]
[PDF 713 KB]
(179)
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28503 |
Si-Cheng Liu(刘思成), Xiao-Yan Tang(汤晓燕), Qing-Wen Song(宋庆文), Hao Yuan(袁昊), Yi-Meng Zhang(张艺蒙), Yi-Men Zhang(张义门), and Yu-Ming Zhang(张玉明) |
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Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C |
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Chin. Phys. B
2021 Vol.30 (2): 28503-0
[Abstract]
(388)
[HTML 1 KB]
[PDF 876 KB]
(77)
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58501 |
Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐) |
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Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source |
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Chin. Phys. B
2020 Vol.29 (5): 58501-058501
[Abstract]
(626)
[HTML 1 KB]
[PDF 606 KB]
(110)
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118501 |
M Micjan, M Novota, P Telek, M Donoval, M Weis |
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Hunting down the ohmic contact of organic field-effect transistor |
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Chin. Phys. B
2019 Vol.28 (11): 118501-118501
[Abstract]
(611)
[HTML 1 KB]
[PDF 579 KB]
(118)
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108501 |
Hui-Fang Xu(许会芳), Jian Cui(崔健), Wen Sun(孙雯), Xin-Feng Han(韩新风) |
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Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance |
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Chin. Phys. B
2019 Vol.28 (10): 108501-108501
[Abstract]
(882)
[HTML 1 KB]
[PDF 564 KB]
(209)
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58503 |
Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) |
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Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation |
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Chin. Phys. B
2019 Vol.28 (5): 58503-058503
[Abstract]
(715)
[HTML 1 KB]
[PDF 1019 KB]
(220)
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37201 |
Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园) |
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Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate |
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Chin. Phys. B
2019 Vol.28 (3): 37201-037201
[Abstract]
(695)
[HTML 1 KB]
[PDF 1984 KB]
(162)
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18505 |
Ru Han(韩茹), Hai-Chao Zhang(张海潮), Dang-Hui Wang(王党辉), Cui Li(李翠) |
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Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer |
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Chin. Phys. B
2019 Vol.28 (1): 18505-018505
[Abstract]
(878)
[HTML 1 KB]
[PDF 792 KB]
(170)
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17105 |
Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华) |
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Review of gallium oxide based field-effect transistors and Schottky barrier diodes |
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Chin. Phys. B
2019 Vol.28 (1): 17105-017105
[Abstract]
(936)
[HTML 1 KB]
[PDF 5647 KB]
(890)
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78502 |
Cong Li(李聪), Zhi-Rui Yan(闫志蕊), Yi-Qi Zhuang(庄奕琪), Xiao-Long Zhao(赵小龙), Jia-Min Guo(郭嘉敏) |
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Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric |
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Chin. Phys. B
2018 Vol.27 (7): 78502-078502
[Abstract]
(540)
[HTML 0 KB]
[PDF 1485 KB]
(227)
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97104 |
Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭) |
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Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (9): 97104-097104
[Abstract]
(707)
[HTML 0 KB]
[PDF 409 KB]
(252)
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77303 |
Fang-Lin Zheng(郑芳林), Cheng-Sheng Liu(刘程晟), Jia-Qi Ren(任佳琪), Yan-Ling Shi(石艳玲), Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进) |
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Analytical capacitance model for 14 nm FinFET considering dual-k spacer |
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Chin. Phys. B
2017 Vol.26 (7): 77303-077303
[Abstract]
(648)
[HTML 1 KB]
[PDF 1849 KB]
(605)
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36804 |
Nianduan Lu(卢年端), Lingfei Wang(汪令飞), Ling Li(李泠), Ming Liu(刘明) |
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A review for compact model of graphene field-effect transistors |
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Chin. Phys. B
2017 Vol.26 (3): 36804-036804
[Abstract]
(702)
[HTML 1 KB]
[PDF 10934 KB]
(1328)
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18504 |
Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军) |
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Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction |
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Chin. Phys. B
2017 Vol.26 (1): 18504-018504
[Abstract]
(653)
[HTML 1 KB]
[PDF 329 KB]
(532)
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108502 |
Yun-He Guan(关云鹤), Zun-Chao Li(李尊朝), Dong-Xu Luo(骆东旭), Qing-Zhi Meng(孟庆之), Ye-Fei Zhang(张也非) |
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Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-yAs heterojunction tunneling field-effect transistors |
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Chin. Phys. B
2016 Vol.25 (10): 108502-108502
[Abstract]
(536)
[HTML 1 KB]
[PDF 460 KB]
(271)
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67206 |
Ze-Zhao He(何泽召), Ke-Wu Yang(杨克武), Cui Yu(蔚翠), Qing-Bin Liu(刘庆彬), Jing-Jing Wang(王晶晶), Jia Li(李佳), Wei-Li Lu(芦伟立), Zhi-Hong Feng(冯志红), Shu-Jun Cai(蔡树军) |
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High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate |
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Chin. Phys. B
2016 Vol.25 (6): 67206-067206
[Abstract]
(678)
[HTML 1 KB]
[PDF 941 KB]
(401)
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37306 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors |
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Chin. Phys. B
2016 Vol.25 (3): 37306-037306
[Abstract]
(693)
[HTML 0 KB]
[PDF 923 KB]
(417)
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38503 |
Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平) |
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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature |
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Chin. Phys. B
2016 Vol.25 (3): 38503-038503
[Abstract]
(861)
[HTML 0 KB]
[PDF 371 KB]
(380)
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38504 |
Yan-Wen Chen(陈燕文), Zhen Tan(谭桢), Lian-Feng Zhao(赵连锋), Jing Wang(王敬), Yi-Zhou Liu(刘易周),Chen Si(司晨), Fang Yuan(袁方), Wen-Hui Duan(段文晖), Jun Xu(许军) |
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Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain |
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Chin. Phys. B
2016 Vol.25 (3): 38504-038504
[Abstract]
(629)
[HTML 1 KB]
[PDF 2024 KB]
(477)
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27701 |
Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪) |
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Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27701-027701
[Abstract]
(812)
[HTML 1 KB]
[PDF 356 KB]
(490)
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58502 |
Fu Zong-Yuan (浮宗元), Zhang Jian-Chi (张剑驰), Hu Jing-Hang (胡静航), Jiang Yu-Long (蒋玉龙), Ding Shi-Jin (丁士进), Zhu Guo-Dong (朱国栋) |
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Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors |
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Chin. Phys. B
2015 Vol.24 (5): 58502-058502
[Abstract]
(536)
[HTML 1 KB]
[PDF 916 KB]
(570)
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37303 |
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇) |
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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (3): 37303-037303
[Abstract]
(775)
[HTML 0 KB]
[PDF 304 KB]
(483)
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18501 |
Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军) |
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GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics |
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Chin. Phys. B
2015 Vol.24 (1): 18501-018501
[Abstract]
(683)
[HTML 0 KB]
[PDF 385 KB]
(513)
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118506 |
Yun Quan-Xin (云全新), Li Ming (黎明), An Xia (安霞), Lin Meng (林猛), Liu Peng-Qiang (刘朋强), Li Zhi-Qiang (李志强), Zhang Bing-Xin (张冰馨), Xia Yu-Xuan (夏宇轩), Zhang Hao (张浩), Zhang Xing (张兴), Huang Ru (黄如), Wang Yang-Yuan (王阳元) |
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Experimental clarification of orientation dependence of germanium PMOSFETs with Al2O3/GeOx/Ge gate stack |
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Chin. Phys. B
2014 Vol.23 (11): 118506-118506
[Abstract]
(547)
[HTML 1 KB]
[PDF 587 KB]
(442)
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104209 |
Dong Yu (董宇), Wang Guang-Long (王广龙), Wang Hong-Pei (王红培), Ni Hai-Qiao (倪海桥), Chen Jian-Hui (陈建辉), Gao Feng-Qi (高凤岐), Qiao Zhong-Tao (乔中涛), Yang Xiao-Hong (杨晓红), Niu Zhi-Chuan (牛智川) |
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Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector |
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Chin. Phys. B
2014 Vol.23 (10): 104209-104209
[Abstract]
(595)
[HTML 1 KB]
[PDF 542 KB]
(584)
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77201 |
Chen Si-Zhe (陈思哲), Sheng Kuang (盛况) |
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Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (7): 77201-077201
[Abstract]
(651)
[HTML 1 KB]
[PDF 783 KB]
(497)
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58201 |
Van Ha Nguyen, Wonkyeong Park, Namtae Kim, Hanjung Song |
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A voltage-controlled chaotic oscillator based on carbon nanotube field-effect transistor for low-power embedded systems |
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Chin. Phys. B
2014 Vol.23 (5): 58201-058201
[Abstract]
(770)
[HTML 1 KB]
[PDF 1121 KB]
(598)
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48501 |
Xu Zong-Xiang (许宗祥), Roy V. A. L. |
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Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors |
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Chin. Phys. B
2014 Vol.23 (4): 48501-048501
[Abstract]
(639)
[HTML 1 KB]
[PDF 537 KB]
(456)
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47201 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂) |
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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (4): 47201-047201
[Abstract]
(530)
[HTML 1 KB]
[PDF 336 KB]
(481)
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98505 |
Wang Xin-Ran (王欣然), Shi Yi (施毅), Zhang Rong (张荣) |
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Field-effect transistors based on two-dimensional materials for logic applications |
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Chin. Phys. B
2013 Vol.22 (9): 98505-098505
[Abstract]
(758)
[HTML 1 KB]
[PDF 3245 KB]
(3797)
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67203 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Wang Yu-Tang (王玉堂), Chen Hong (陈弘), Wang Zhan-Guo (王占国) |
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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor |
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Chin. Phys. B
2013 Vol.22 (6): 67203-067203
[Abstract]
(706)
[HTML 1 KB]
[PDF 550 KB]
(663)
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77306 |
Chang Hu-Dong (常虎东), Sun Bing (孙兵), Xue Bai-Qing (薛百清), Liu Gui-Ming (刘桂明), Zhao Wei (赵威), Wang Sheng-Kai (王盛凯), Liu Hong-Gang (刘洪刚) |
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Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate |
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Chin. Phys. B
2013 Vol.22 (7): 77306-077306
[Abstract]
(751)
[HTML 1 KB]
[PDF 503 KB]
(640)
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38501 |
Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇) |
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Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor |
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Chin. Phys. B
2013 Vol.22 (3): 38501-038501
[Abstract]
(982)
[HTML 0 KB]
[PDF 417 KB]
(1507)
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117307 |
Yu Xin-Ge (于欣格), Yu Jun-Sheng (于军胜), Huang Wei (黄伟), Zeng Hong-Juan (曾红娟 ) |
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Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer |
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Chin. Phys. B
2012 Vol.21 (11): 117307-117307
[Abstract]
(1085)
[HTML 1 KB]
[PDF 410 KB]
(735)
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107306 |
Ma Fei (马飞), Liu Hong-Xia (刘红侠), Fan Ji-Bin (樊继斌), Wang Shu-Long (王树龙) |
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A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs |
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Chin. Phys. B
2012 Vol.21 (10): 107306-107306
[Abstract]
(1031)
[HTML 1 KB]
[PDF 197 KB]
(979)
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89401 |
Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明), Li Da-Wei (李达维), Liang Bin (梁斌), Liu Bi-Wei (刘必慰 ) |
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Temperature and drain bias dependence of single event transient in 25-nm FinFET technology |
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Chin. Phys. B
2012 Vol.21 (8): 89401-089401
[Abstract]
(1471)
[HTML 1 KB]
[PDF 727 KB]
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87305 |
Wang Zhi-Gang (汪志刚), Chen Wan-Jun (陈万军), Zhang Jing (张竞), Zhang Bo (张波), Li Zhao-Ji (李肇基 ) |
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Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection |
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Chin. Phys. B
2012 Vol.21 (8): 87305-087305
[Abstract]
(1477)
[HTML 1 KB]
[PDF 5129 KB]
(876)
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68502 |
Wang Tao(汪涛), Guo Qing(郭清), Liu Yan(刘艳), and Yun Janggn |
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Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS |
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Chin. Phys. B
2012 Vol.21 (6): 68502-068502
[Abstract]
(1506)
[HTML 1 KB]
[PDF 279 KB]
(2039)
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47303 |
Zhang Jian(张健), He Jin(何进), Zhou Xing-Ye(周幸叶), Zhang Li-Ning(张立宁), Ma Yu-Tao(马玉涛), Chen Qin(陈沁), Zhang Xu-Kai(张勖凯), Yang Zhang(杨张), Wang Rui-Fei(王睿斐), HanYu(韩雨), and Chan Mansun(陈文新) |
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A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel |
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Chin. Phys. B
2012 Vol.21 (4): 47303-047303
[Abstract]
(1385)
[HTML 1 KB]
[PDF 303 KB]
(724)
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27305 |
Zhou Jian-Lin(周建林), Yu Jun-Sheng(于军胜), Yu Xin-Ge(于欣格), and Cai Xin-Yang(蔡欣洋) |
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A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes |
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Chin. Phys. B
2012 Vol.21 (2): 27305-027305
[Abstract]
(1078)
[HTML 1 KB]
[PDF 1560 KB]
(1537)
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27304 |
Jiang Xiang-Wei(姜向伟) and Li Shu-Shen(李树深) |
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Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs |
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Chin. Phys. B
2012 Vol.21 (2): 27304-027304
[Abstract]
(1267)
[HTML 1 KB]
[PDF 748 KB]
(1243)
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17202 |
Song Kun(宋坤), Chai Chang-Chun(柴常春), Yang Yin-Tang(杨银堂), Chen Bin(陈斌), Zhang Xian-Jun(张现军), and Ma Zhen-Yang(马振洋) |
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Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal–semiconductor field-effect transistors |
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Chin. Phys. B
2012 Vol.21 (1): 17202-17202
[Abstract]
(1087)
[HTML 1 KB]
[PDF 454 KB]
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17304 |
Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric |
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Chin. Phys. B
2012 Vol.21 (1): 17304-017304
[Abstract]
(1424)
[HTML 1 KB]
[PDF 244 KB]
(1599)
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17201 |
Zhang Xian-Jun(张现军), Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chen Bin(陈斌), Chai Chang-Chun(柴常春), and Song Kun(宋坤) |
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New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer |
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Chin. Phys. B
2012 Vol.21 (1): 17201-017201
[Abstract]
(1319)
[HTML 1 KB]
[PDF 933 KB]
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127303 |
Chen Yue-Ning(陈跃宁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Yin Fei-Fei(尹飞飞), Zhang Cheng-Wen(张成文), Jiao Bi-Yuan(焦碧媛), and Dong Yu-Hang (董宇航) |
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Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance |
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Chin. Phys. B
2011 Vol.20 (12): 127303-127303
[Abstract]
(1467)
[HTML 1 KB]
[PDF 430 KB]
(673)
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17304 |
Deng Xiao-Chuan(邓小川), Zhang Bo(张波), Zhang You-Run(张有润), Wang Yi(王易), and Li Zhao-Ji(李肇基) |
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Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer |
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Chin. Phys. B
2011 Vol.20 (1): 17304-017304
[Abstract]
(2065)
[HTML 0 KB]
[PDF 602 KB]
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97306 |
Cao Yan-Rong(曹艳荣), Ma Xiao-Hua(马晓华), Hao Yue(郝跃), and Tian Wen-Chao(田文超) |
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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97306-097306
[Abstract]
(1636)
[HTML 1 KB]
[PDF 785 KB]
(760)
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117309 |
Qin Shan-Shan(秦珊珊), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), Xuan Rong-Xi(宣荣喜), and Shu Bin(舒斌) |
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An analytical threshold voltage model for dual-strained channel PMOSFET |
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Chin. Phys. B
2010 Vol.19 (11): 117309-117309
[Abstract]
(1263)
[HTML 0 KB]
[PDF 694 KB]
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18103 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才),Li Jing(李婧), Sun Qin-Jun(孙钦军),Wang Yun(王赟), and Xu Xu-Rong(徐叙瑢) |
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Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (1): 18103-018103
[Abstract]
(1471)
[HTML 0 KB]
[PDF 5000 KB]
(903)
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3568 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才), and Xu Xu-Rong(徐叙瑢) |
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Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors |
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Chin. Phys. B
2009 Vol.18 (8): 3568-3572
[Abstract]
(1260)
[HTML 1 KB]
[PDF 1344 KB]
(641)
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3530 |
Liu Ge(刘舸), Liu Ming(刘明), Wang Hong(王宏), Shang Li-Wei(商立伟), Ji Zhuo-Yu(姬濯宇), Liu Xing-Hua(刘兴华), and Liu Jiang(柳江) |
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Study of top and bottom contact resistance in one organic field-effect transistor |
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Chin. Phys. B
2009 Vol.18 (8): 3530-3534
[Abstract]
(1648)
[HTML 1 KB]
[PDF 1752 KB]
(1053)
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1594 |
Li Ming(黎明), Zhang Hai-Ying(张海英), Guo Chang-Xin(郭常新), Xu Jing-Bo(徐静波), and Fu Xiao-Jun(付晓君) |
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The research on suspended ZnO nanowire field-effect transistor |
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Chin. Phys. B
2009 Vol.18 (4): 1594-1597
[Abstract]
(1597)
[HTML 1 KB]
[PDF 394 KB]
(726)
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5078 |
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Xu Xu-Rong(徐叙瑢), Yuan Guang-Cai(袁广才), Li Jing(李婧), Sun Qin-Jun(孙钦军), and Wang Ying(王赟) |
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Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors |
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Chin. Phys. B
2009 Vol.18 (11): 5078-5083
[Abstract]
(1437)
[HTML 1 KB]
[PDF 3151 KB]
(541)
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5020 |
Li Ming(黎明), Zhang Hai-Ying(张海英), Guo Chang-Xin(郭常新), Xu Jing-Bo(徐静波), Fu Xiao-Jun(付晓君), and Chen Pu-Feng(陈普锋) |
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Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation |
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Chin. Phys. B
2009 Vol.18 (11): 5020-5023
[Abstract]
(1607)
[HTML 1 KB]
[PDF 1438 KB]
(786)
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