Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation
Li Ming(黎明)a)†, Zhang Hai-Ying(张海英)a), Guo Chang-Xin(郭常新)b), Xu Jing-Bo(徐静波)a), Fu Xiao-Jun(付晓君)a), and Chen Pu-Feng(陈普锋)a)
a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b Department of Physic, University of Science and Technology of China, Hefei 230026, China
Abstract A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. On the one hand, when the radiation time is 5~min, the radiation intensity increases to 5.1 μW/cm2, while the saturation drain current (Idss) of the nanowire FET decreases sharply from 560 to 320 nA. The field effect mobility (μ) of the ZnO nanowire FET drops from 50.17 to 23.82 cm2/(V$\cdot$s) at VDS = 2.5 V, and the channel resistivity of the FET increases by a factor of 2. On the other hand, when the radiation intensity is 2.5 μW/cm2 , the DC performance of the FET does not change significantly with irradiation time (its performances at irradiation times of 5 and 20 min are almost the same); in particular, the Idss of NW FET only reduces by about 50 nA. Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.
Received: 23 December 2008
Revised: 22 April 2009
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the Dean Fund
of Institute of Microelectronics, Chinese Academy of Sciences (Grant
No 08SB034002).
Cite this article:
Li Ming(黎明), Zhang Hai-Ying(张海英), Guo Chang-Xin(郭常新), Xu Jing-Bo(徐静波), Fu Xiao-Jun(付晓君), and Chen Pu-Feng(陈普锋) Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation 2009 Chin. Phys. B 18 5020
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