New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer

doi:10.1088/1674-1056/21/1/017201

Abstract A new 4H silicon carbide metal semiconductor field-effect transistor (4H-SiC MESFET) structure with a buffer layer between the gate and the channel layer is proposed in this paper for high power microwave applications. The physics-based analytical models for calculating the performance of the proposed device are obtained by solving one- and two-dimensional Poisson's equations. In the models, we take into account not only two regions under the gate but also a third high field region between the gate and the drain which is usually omitted. The direct-current and the alternating-current performances for the proposed 4H-SiC MESFET with a buffer layer of 0.2 μ m are calculated. The calculated results are in good agreement with the experimental data. The current is larger than that of the conventional structure. The cutoff frequency (f_T) and the maximum oscillation frequency (f_max) are 20.4 GHz and 101.6 GHz, respectively, which are higher than 7.8 GHz and 45.3 GHz of the conventional structure. Therefore, the proposed 4H-SiC MESFET structure has better power and microwave performances than the conventional structure.

Keywords: 4H silicon carbide metal semiconductor field-effect transistor Poisson's equation

Received: 05 July 2011
Revised: 15 August 2011
Accepted manuscript online:

PACS:	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	73.20.At	(Surface states, band structure, electron density of states)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant No. 51308030201).

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Zhang Xian-Jun(张现军), Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chen Bin(陈斌), Chai Chang-Chun(柴常春), and Song Kun(宋坤) New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer 2012 Chin. Phys. B 21 017201

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[1]	Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), and Jia Li-Xin(贾立新). Chin. Phys. B, 2009, 18(10): 4456-4459.
[2]	A new physics-based self-heating effect model for 4H-SiC MESFETs Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明). Chin. Phys. B, 2008, 17(12): 4622-4626.

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New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer

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