High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

doi:10.1088/1674-1056/25/6/067206

Abstract

In this paper, high temperature direct current (DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃. At a gate voltage of -8 V (far from Dirac point), the drain-source current decreases obviously with increasing temperature, but it has little change at a gate bias of +8 V (near Dirac point). The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies. Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures. The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience, demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.

Keywords: epitaxial graphene field-effect transistor high temperature characteristics

Received: 01 February 2016
Revised: 10 March 2016
Accepted manuscript online:

PACS:	72.80.Vp	(Electronic transport in graphene)
	65.80.Ck	(Thermal properties of graphene)
	68.65.Pq	(Graphene films)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 61306006).

Corresponding Authors: Zhi-Hong Feng
E-mail: ga917vv@163.com

Cite this article:

Ze-Zhao He(何泽召), Ke-Wu Yang(杨克武), Cui Yu(蔚翠), Qing-Bin Liu(刘庆彬), Jing-Jing Wang(王晶晶), Jia Li(李佳), Wei-Li Lu(芦伟立), Zhi-Hong Feng(冯志红), Shu-Jun Cai(蔡树军) High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate 2016 Chin. Phys. B 25 067206

[1]	Geim A K and Novoselov K S 2007 Nat. Mater. 6 183
[2]	Morozov S, Novoselov K, Katsnelson M, Schedin F, Elias D, Jaszczak J and Geim A K 2008 Phys. Rev. Lett. 100 016602
[3]	Wu Y, Jenkins K A, Valdes-Garcia A, Farmer D B, Zhu Y, Bol A A, Dimitrakopoulos C, Zhu W, Xia F, Avouris P and Lin Y M 2012 Nano Lett. 12 3062
[4]	Cheng R, Bai J, Liao L, Zhou H, Chen Y, Liu L, Lin Y, Jiang S, Huang Y and Duan X 2012 Proc. Nat. Acad. Sci. 109 11588
[5]	Yu C, He Z Z, Li J, Song X B, Liu Q B, Cai S J and Feng Z H 2016 Appl. Phys. Lett. 108 013102
[6]	Yang X Y, Dou X, Rouhanipour A, Zhi L J, Rader H J and Mullen K 2008 J. Am. Chem. Soc. 130 4216
[7]	Yan H, Li Z, Li X, Zhu W, Avouris P and Xia F 2012 Nano Lett. 12 3766
[8]	Furchi M, Urich A, Pospischil A, Lilley G, Unterrainer K, Detz H, Klang P, Andrews A M, Schrenk W, Strasser G and Mueller T 2012 Nano Lett. 12 2773
[9]	Liao L, Bai J, Cheng R, Zhou H, Liu L, Liu Y, Huang Y and Duan X 2012 Nano Lett. 12 2653
[10]	Zou K, Hong X and Zhu J 2011 Phys. Rev. B 84 085408
[11]	Bolotin K I, Sikes K J, Hone J, Stormer H L and Kim P 2008 Phys. Rev. Lett. 101 096802
[12]	Feng T T, Xie D, Li G, Xu J L, Zhao H M, Ren T L and Zhu H W 2014 Carbon 78 250
[13]	Yu C, Li J, Liu Q B, Dun S B, He Z Z, Zhang X W, Cai S J and Feng Z H 2013 Appl. Phys. Lett. 102 013107
[14]	Yu C, Liu Q B, Li J, Lu W L, He Z Z, Cai S J and Feng Z H 2014 Appl. Phys. Lett. 105 183105
[15]	He Z Z, Yang K K, Yu C, Li J, Liu Q B, Lu W L, Feng Z H and Cai S J 2015 Chin. Phys. Lett. 32 117204
[16]	Clavel M, Poiroux T, Mouis M, Becerra L, Thomassin J L, Zenasni A, Lapertot G, Rouchon D, Lafond D and Faynot O 2012 Solid State Electron. 71 2
[17]	Nyakiti L O, Myers-Ward R L, Wheeler V D, Imhoff E A, Bezares F J, Chun H, Caldwell J D, Friedman A L, Matis B R, Baldwin J W, Campbell P M, Culbertson J C, Eddy C R Jr, Jernigan G G and Gaskill D K 2012 Nano Lett. 12 1749
[18]	Tan Y W, Zhang Y, Stormer H L and Kim P 2007 Eur. Phys. J. Special Topics 148 15
[19]	Li Q, Hwang E H and Sarma D S 2011 Phys. Rev. B 84 115442
[20]	Xu Z, Wang J, Cai Y, Liu J, Yang Z, Li X, Wang M, Yu M, Xie B, Wu W, Ma X, Zhang J and Hao Y 2014 IEEE Electron Dev. Lett. 35 33
[21]	Aonar A, Fang T and Jena 2010 Phys. Rev. B 82 115452

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High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

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