1. Department of Physics, Tsinghua University, Beijing 100084, China; 2. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China; 3. Department of Electrical Engineering, Princeton University, Princeton, Princeton, NJ 08544, USA; 4. School of Materials Science and Engineering, Beihang University, Beijing 100191, China
Abstract Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V·s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxial compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.
(Density functional theory, local density approximation, gradient and other corrections)
Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-002).
Corresponding Authors:
Jun Xu
E-mail: junxu@tsinghua.edu.cn
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