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Chin. Phys. B, 2012, Vol. 21(1): 017304    DOI: 10.1088/1674-1056/21/1/017304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)
School of Microelectronics, Xidian University, Xián 710071, China; b Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China
Abstract  Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 gate dielectrics are fabricated. The device, with atomic-layer-deposited Al2O3 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al2O3 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al2O3 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al2O3 growth and device fabrication.
Keywords:  gallium nitride      metal-oxide-semiconductor field-effect transistor      atomic-layer deposition      aluminium oxide  
Received:  27 June 2011      Revised:  19 July 2011      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.61.Ey (III-V semiconductors)  
  85.30.Tv (Field effect devices)  

Cite this article: 

Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric 2012 Chin. Phys. B 21 017304

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