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A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric |
Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)† |
a School of Microelectronics, Xidian University, Xián 710071, China; b Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xián 710071, China |
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Abstract Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 gate dielectrics are fabricated. The device, with atomic-layer-deposited Al2O3 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al2O3 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al2O3 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al2O3 growth and device fabrication.
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Received: 27 June 2011
Revised: 19 July 2011
Accepted manuscript online:
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.61.Ey
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(III-V semiconductors)
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85.30.Tv
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(Field effect devices)
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Cite this article:
Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric 2012 Chin. Phys. B 21 017304
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[1] |
Albrecht J D, Wang R P, Ruden P P, Farahman M and Breman KF 1998 J. Appl. Phys. 83 4777
|
[2] |
Wu L J, Hu S D and Zhang B 2011 Chin. Phys. B 20 27101
|
[3] |
Simin G, Hu X, Tarakji A and Zhang J 2001 Jpn. J. Appl. Phys. Lett. 40 L1142
|
[4] |
Kumar V, Lu W and Schwindt R 2002 IEEE Electron Device Lett. 23 455
|
[5] |
Hashizume T, Alekseev E, Pavlidis D, Boutros K S and Redwing J 2000 J. Appl. Phys. 88 1983
|
[6] |
Casey H C, Fountain G G Jr and Alley R G 1996 Appl. Phys. Lett. 68 1850
|
[7] |
Gaffey B, Guido L J and Wang X W 2001 IEEE Electron Devices 48 458
|
[8] |
Tu L W , Kuo W C, Lee K H and Tsao P H 2000 Appl. Phys. Lett. 77 3788
|
[9] |
Ren F, Hao Z B and Wang L 2010 Chin. Phys. B 19 17306
|
[10] |
Wang C, Quan S and Zhang J F 2009 Acta Phys. Sin. 58 1966 (in Chinese)
|
[11] |
Li R F, Yang R X and Wu Y B 2008 Acta Phys. Sin. 57 2450 (in Chinese)
|
[12] |
Ren F, Abemathy C R and Mackenzie J D 1998 Solid-State Electron. 42 2177
|
[13] |
Razeghi M and Rogalski A 1996 J. Appl. Phys. 79 7433
|
[14] |
Chang Y C, Chiu H C, Lee Y J and Huang M L 2007 Appl. Phys. Lett. 90 232904
|
[15] |
Liu C, Chor E F and Tan L S 2006 Appl. Phys. Lett. 88 173504
|
[16] |
Lee K T, Huang C F, Gong J and Liou B H 2009 IEEE Electron Device Lett. 30 907
|
[17] |
Ye P D, Yang B, Ng K K and Bude J 2005 Appl. Phys. Lett. 86 063501
|
[18] |
Chang W H, Lee Y J, Chang P, Huang M L and Lee Y J 2009 Adv. Mater. 21 4970
|
[19] |
Chang Y C, Lee Y N, Chiu T D and Lin S Y 2007 J. Cryst. Growth 301-302 390
|
[20] |
Kim J, Mehandru R, Luo B, Ren F, Gila B P and Onstine A H 2002 Appl. Phys. Lett. 80 4555
|
[21] |
Ye P D, Wilk G D, Yang B, Kwo J and Gossmann H J 2004 J. Electron Mater. 33 912
|
[22] |
Groner M D, Elam J W, Fabreguette F H and George S M 2003 Thin Solid Films 413 186
|
[23] |
Hashizume T, Ootomo S and Hasegawa H 2003 Phys. Stat. Sol. (c) 0 2380
|
[24] |
Johnson J W, Luo B and Ren F 2000 Appl. Phys. Lett. 38 829
|
[25] |
Wu Y Q, Ye P D and Yang B 2006 Mater. Sci. Eng. 135 282
|
[26] |
Chang Y C, Chang W H and Chang Y H 2010 Microelectro. Eng. 87 2042
|
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