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Spin transport in epitaxial Fe3O4/GaAs lateral structured devices |
Zhaocong Huang(黄兆聪)1,2, Wenqing Liu(刘文卿)3,4, Jian Liang(梁健)1, Qingjie Guo(郭庆杰)1, Ya Zhai(翟亚)1,†, and Yongbing Xu(徐永兵)2,3,‡ |
1 School of Physics, Southeast University, Nanjing 211189, China; 2 Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO105 DD, United Kingdom; 3 York-Nanjing Joint Center in Spintronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China; 4 Department of Electronic Engineering, Royal Holloway University of London, Egham, Surrey TW200 EX, United Kingdom |
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Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias dependence. Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.
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Received: 08 November 2021
Revised: 04 January 2022
Accepted manuscript online: 05 January 2022
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PACS:
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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85.75.Hh
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(Spin polarized field effect transistors)
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73.43.Qt
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(Magnetoresistance)
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75.30.Gw
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(Magnetic anisotropy)
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Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204800), and the National Natural Science Foundation of China (Grant Nos. 52071079 and 11504047). |
Corresponding Authors:
Ya Zhai, Yongbing Xu
E-mail: yazhai@seu.edu.cn;ybxu@nju.edu.cn
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Cite this article:
Zhaocong Huang(黄兆聪), Wenqing Liu(刘文卿), Jian Liang(梁健), Qingjie Guo(郭庆杰), Ya Zhai(翟亚), and Yongbing Xu(徐永兵) Spin transport in epitaxial Fe3O4/GaAs lateral structured devices 2022 Chin. Phys. B 31 068505
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[1] Datta S and Das B 1990 Appl. Phys. Lett. 56 665 [2] Zutic I, Fabian J and Das Sarma S 2004 Rev. Mod. Phys. 76 323 [3] Wang L, Chen L C, Liu W Y, Han S, Wang W W, Lu Z J and Chen S S 2018 Chin. Phys. B 27 097202 [4] Gu X R, Guo L D and Sun X N 2018 Chin. Phys. B 27 107202 [5] Benítez L A, Sierra J F, Torres W S, Arrighi A, Bonell F, Costache M V and Valenzuela S O 2018 Nat. Phys. 14 303 [6] Liu T, Wang X, Wang H, Shi G, Gao F, Feng H, Deng H, Hu L, Lochner E, Schlottmann P, von Molnár S, Li Y, Zhao J and Xiong P 2020 ACS Nano 14 15983 [7] Kikkawa J M and Awschalom D D 1998 Phys. Rev. Lett. 80 4313 [8] Kikkawa J M and Awschalom D D 1999 Nature 397 139 [9] Lou X, Adelmann C, Crooker S A, Garlid E S, Zhang J, Reddy K S M, Flexner S D, Palmstrom C J and Crowell P A 2007 Nat. Phys. 3 197 [10] Van't Erve O M J, Li C H, Kioseoglou G, Hanbicki A T, Osofsky M, Cheng S F and Jonker B T 2007 Appl. Phys. Lett. 91 122515 [11] Dash S P, Sharma S, Patel R S, de Jong M P and Jansen R 2009 Nature 462 491 [12] Bhat S G and Kumar P S A 2014 Sci. Rep. 4 6296 [13] Tombros N, Jozsa C, Popinciuc M, Jonkman H T and van Wees B J 2007 Nature 448 571 [14] Dlubak B, Martin M B, Deranlot C, Servet B, Xavier S, Mattana R, Sprinkle M, Berger C, De Heer WA, Petroff F, Anane A, Seneor P and Fert A 2012 Nat. Phys. 8 557 [15] Fert A and Jaffres H 2001 Phys. Rev. B 64 184420 [16] Wong P K J, Zhang W, Wu J, Will I G, Xu Y B, Xia K, Holmes S N, Farrer I, Beere H E and Ritchie D A 2016 Sci. Rep. 6 29845 [17] Dedkov Y S, Rudiger U and Guntherodt G 2002 Phys. Rev. B 65 064417 [18] Lu X Y, Atkinson L J, Kuerbanjiang B, Liu B, Li G Q, Wang Y C, Wang J L, Ruan X Z, Wu J, Evans R F L, Lazarov V K, Chantrell R W and Xu Y B 2019 Appl. Phys. Lett. 114 192406 [19] Rakshit R, Hattori A N, Naitoh Y, Shima H, Akinaga H and Tanaka H 2019 Nano Lett. 19 5003 [20] Fonin M, Pentcheva R, Dedkov Yu S, Sperlich M, Vyalikh D V, Scheffler M, Rüdiger U and Güntherodt G 2005 Phys. Rev. B 72 104436 [21] Schmidt G, Ferrand D, Molenkamp L W, Filip A T and van Wees B J 2000 Phys. Rev. B 62 R4790 [22] Fert A and Jaffres H 2001 Phys. Rev. B 64 184420 [23] Jonker B T, Kioseoglou G, Hanbicki A T, Li C H and Thompson P E 2007 Nat. Phys. 3 542 [24] Oltscher M, Ciorga M, Utz M, Schuh D, Bougeard D and Weiss D 2014 Phys. Rev. Lett. 113 236602 [25] Kountouriotis K, Barreda J L, Keiper T D, Zhang M and Xiong P 2018 Nano Lett. 18 4386 [26] Hassan S S A, Xu Y B, Ahmad E and Lu Y X 2007 IEEE Trans. Magn. 43 2875 [27] Watts S M, Boothman C, van Dijken S and Coey J M D 2005 Appl. Phys. Lett. 86 212108 [28] Koo H C, Kwon J H, Eom J, Chang J, Han S H and Johnson M 2009 Science 325 1515 [29] Huang Z C, Liu W Q, Yue J J, Zhou Q H, Zhang W, Lu YX, Sui Y X, Zhai Y, Chen Q, Dong S, Wang J L, Xu Y B and Wang B P 2016 ACS Appl. Mater. Interfaces 8 27353 [30] Lu Y X, Claydon J S, Xu Y B, Schofield D M, Thompson S M and van der Laan G 2004 Phys. Rev. B 70 233304 [31] Zhai Y, Huang Z C, Fu Y, Ni C, Lu Y X, Xu Y B, Wu J and Zhai H R 2007 J. Appl. Phys. 101 09D126 [32] Feng D, Ding S and Zhai H 1998 Superconductivity and Magnetism (Beijing: Science Press) p. 463 (in Chinese) [33] Hirohata A, Xu Y B, Guertler C M, Bland J A C and Holmes S N 2001 Phys. Rev. B 63 104425 [34] Sze S M and Ng K K 2006 Physics of Semiconductor Devices (New Jersey: John Wiley and Sons) p. 162 |
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