Other articles related with "CVD":
37303 Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃)
  Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process
    Chin. Phys. B   2023 Vol.32 (3): 37303-037303 [Abstract] (244) [HTML 1 KB] [PDF 836 KB] (131)
16701 Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华)
  Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation
    Chin. Phys. B   2023 Vol.32 (1): 16701-016701 [Abstract] (225) [HTML 1 KB] [PDF 2258 KB] (114)
118102 Weikang Zhao(赵伟康), Yan Teng(滕妍), Kun Tang(汤琨), Shunming Zhu(朱顺明), Kai Yang(杨凯), Jingjing Duan(段晶晶), Yingmeng Huang(黄颖蒙), Ziang Chen(陈子昂), Jiandong Ye(叶建东), and Shulin Gu(顾书林)
  Significant suppression of residual nitrogen incorporation in diamond film with a novel susceptor geometry employed in MPCVD
    Chin. Phys. B   2022 Vol.31 (11): 118102-118102 [Abstract] (304) [HTML 1 KB] [PDF 3657 KB] (150)
108106 Wen-Liang Xie(谢文良), Xian-Yi Lv(吕宪义), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Guang-Tian Zou(邹广田)
  Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder
    Chin. Phys. B   2022 Vol.31 (10): 108106-108106 [Abstract] (353) [HTML 0 KB] [PDF 856 KB] (119)
88105 Jia-Jun Ma(马佳俊), Kang Wu(吴康), Zhen-Yu Wang(王振宇), Rui-Song Ma(马瑞松), Li-Hong Bao(鲍丽宏), Qing Dai(戴庆), Jin-Dong Ren(任金东), and Hong-Jun Gao(高鸿钧)
  Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition
    Chin. Phys. B   2022 Vol.31 (8): 88105-088105 [Abstract] (636) [HTML 1 KB] [PDF 1277 KB] (465)
88503 Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Mao-Lin Zhang(张茂林), Li-Li Yang(杨莉莉), Shan Li(李山), Zu-Yong Yan(晏祖勇), Shao-Hui Zhang(张少辉), Dao-You Guo(郭道友), Pei-Gang Li(李培刚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华)
  A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response
    Chin. Phys. B   2022 Vol.31 (8): 88503-088503 [Abstract] (300) [HTML 0 KB] [PDF 1281 KB] (105)
38103 Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘)
  Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD
    Chin. Phys. B   2022 Vol.31 (3): 38103-038103 [Abstract] (446) [HTML 1 KB] [PDF 3764 KB] (286)
126201 Jin-Zi Ding(丁金姿), Wei Ren(任卫), Ai-Ling Feng(冯爱玲), Yao Wang(王垚), Hao-Sen Qiao(乔浩森), Yu-Xin Jia(贾煜欣), Shuang-Xiong Ma(马双雄), and Bo-Yu Zhang(张博宇)
  Synthesis of flower-like WS2 by chemical vapor deposition
    Chin. Phys. B   2021 Vol.30 (12): 126201-126201 [Abstract] (388) [HTML 0 KB] [PDF 1676 KB] (68)
118101 Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮)
  Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si
    Chin. Phys. B   2021 Vol.30 (11): 118101-118101 [Abstract] (464) [HTML 1 KB] [PDF 1911 KB] (113)
98101 Rui-Xia Miao(苗瑞霞), Chen-He Zhao(赵晨鹤), Shao-Qing Wang(王少青), Wei Ren(任卫), Yong-Feng Li(李永锋), Ti-Kang Shu(束体康), and Ben Yang(杨奔)
  Direct growth of graphene films without catalyst on flexible glass substrates by PECVD
    Chin. Phys. B   2021 Vol.30 (9): 98101-098101 [Abstract] (420) [HTML 1 KB] [PDF 2157 KB] (87)
96803 Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东)
  Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains
    Chin. Phys. B   2021 Vol.30 (9): 96803-096803 [Abstract] (355) [HTML 1 KB] [PDF 1390 KB] (216)
57301 Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华)
  High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film
    Chin. Phys. B   2021 Vol.30 (5): 57301-057301 [Abstract] (467) [HTML 1 KB] [PDF 2894 KB] (195)
48103 Yudong Zhang(张玉栋), Jiale Tang(唐家乐), Yongjie Hu(胡永杰), Jie Yuan(袁杰), Lulu Guan(管路路), Xingyu Li(李星雨), Hushan Cui(崔虎山), Guanghui Ding(丁光辉), Xinying Shi(石新颖), Kaidong Xu(许开东), and Shiwei Zhuang(庄仕伟)
  Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD
    Chin. Phys. B   2021 Vol.30 (4): 48103- [Abstract] (421) [HTML 1 KB] [PDF 648 KB] (107)
107201 Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Qiu-Ling Qiu(丘秋凌), Liu-An Li(李柳暗), Liang He(何亮), Jin-Wei Zhang(张津玮), Chen-Liang Feng(冯辰亮), Zhen-Xing Liu(刘振兴), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Yun-Liang Rao(饶运良), Zhi-Yuan He(贺致远), and Yang Liu (刘扬)†
  Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric
    Chin. Phys. B   2020 Vol.29 (10): 107201- [Abstract] (639) [HTML 1 KB] [PDF 1171 KB] (114)
58103 Qing-Jun Xu(徐庆君), Shi-Ying Zhang(张士英), Bin Liu(刘斌), Zhen-Hua Li(李振华), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Ke Wang(王科), Rong Zhang(张荣), You-Liao Zheng(郑有炓)
  Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys
    Chin. Phys. B   2020 Vol.29 (5): 58103-058103 [Abstract] (725) [HTML 1 KB] [PDF 476 KB] (168)
37201 Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Liang He(何亮), Qiu-Ling Qiu(丘秋凌), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬)
  Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric
    Chin. Phys. B   2020 Vol.29 (3): 37201-037201 [Abstract] (626) [HTML 1 KB] [PDF 1180 KB] (155)
78101 Xiuqing Meng(孟秀清), Shulin Chen(陈书林), Yunzhang Fang(方允樟), Jianlong Kou(寇建龙)
  Annealing-enhanced interlayer coupling interaction inGaS/MoS2 heterojunctions
    Chin. Phys. B   2019 Vol.28 (7): 78101-078101 [Abstract] (555) [HTML 1 KB] [PDF 792 KB] (134)
127309 Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Xin Li(李鑫), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣)
  Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction
    Chin. Phys. B   2017 Vol.26 (12): 127309-127309 [Abstract] (654) [HTML 0 KB] [PDF 580 KB] (213)
118103 Xun Yang(杨汛), Hai-Bo Gan(甘海波), Yan Tian(田颜), Ning-Sheng Xu(许宁生), Shao-Zhi Deng(邓少芝), Jun Chen(陈军), Huanjun Chen(陈焕君), Shi-Dong Liang(梁世东), Fei Liu(刘飞)
  An easy way to controllably synthesize one-dimensional SmB6 topological insulator nanostructures and exploration of their field emission applications
    Chin. Phys. B   2017 Vol.26 (11): 118103-118103 [Abstract] (700) [HTML 1 KB] [PDF 1952 KB] (342)
68104 Qi-Chang Hu(胡启昌), Kai Ding(丁凯)
  Magnesium incorporation efficiencies in MgxZn1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition
    Chin. Phys. B   2017 Vol.26 (6): 68104-068104 [Abstract] (581) [HTML 1 KB] [PDF 1695 KB] (262)
67901 Rongxuan Deng(邓荣轩), Haoran Zhang(张浩然), Yanhui Zhang(张燕辉), Zhiying Chen(陈志蓥), Yanping Sui(隋妍萍), Xiaoming Ge(葛晓明), Yijian Liang(梁逸俭), Shike Hu(胡诗珂), Guanghui Yu(于广辉), Da Jiang(姜达)
  Graphene/Mo2C heterostructure directly grown by chemical vapor deposition
    Chin. Phys. B   2017 Vol.26 (6): 67901-067901 [Abstract] (751) [HTML 1 KB] [PDF 1423 KB] (483)
27801 Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
  Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
    Chin. Phys. B   2017 Vol.26 (2): 27801-027801 [Abstract] (800) [HTML 1 KB] [PDF 2722 KB] (314)
118506 Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢)
  High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer
    Chin. Phys. B   2016 Vol.25 (11): 118506-118506 [Abstract] (735) [HTML 0 KB] [PDF 866 KB] (320)
118801 Yanjiao Shen(沈艳娇), Jianhui Chen(陈剑辉), Jing Yang(杨静), Bingbing Chen(陈兵兵), Jingwei Chen(陈静伟), Feng Li(李峰), Xiuhong Dai(代秀红), Haixu Liu(刘海旭), Ying Xu(许颖), Yaohua Mai(麦耀华)
  Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD
    Chin. Phys. B   2016 Vol.25 (11): 118801-118801 [Abstract] (737) [HTML 1 KB] [PDF 1393 KB] (394)
67503 Hai-Ying Xing(邢海英), Yu Chen(陈雨), Chen Ji(纪骋), Sheng-Xiang Jiang(蒋盛翔), Meng-Yao Yuan(苑梦尧), Zhi-Ying Guo(郭志英), Kun Li(李琨), Ming-Qi Cui(崔明启), Guo-Yi Zhang(张国义)
  Role of vacancy-type defects in magnetism of GaMnN
    Chin. Phys. B   2016 Vol.25 (6): 67503-067503 [Abstract] (604) [HTML 1 KB] [PDF 845 KB] (264)
38101 Shu-Zhen Yu(于淑珍), Jian-Rong Dong(董建荣), Yu-Run Sun(孙玉润), Kui-Long Li(李奎龙),Xu-Lu Zeng(曾徐路), Yong-Ming Zhao(赵勇明), Hui Yang(杨辉)
  Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation
    Chin. Phys. B   2016 Vol.25 (3): 38101-038101 [Abstract] (593) [HTML 1 KB] [PDF 1759 KB] (288)
28103 Feng Guo(郭峰), Xin-Sheng Wang(汪薪生), Shi-Wei Zhuang(庄仕伟), Guo-Xing Li(李国兴), Bao-Lin Zhang(张宝林), Pen-Chu Chou(周本初)
  Nanodots and microwires of ZrO2 grown on LaAlO3 by photo-assisted metal-organic chemical vapor deposition
    Chin. Phys. B   2016 Vol.25 (2): 28103-028103 [Abstract] (670) [HTML 1 KB] [PDF 3756 KB] (415)
87305 Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美)
  Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications
    Chin. Phys. B   2015 Vol.24 (8): 87305-087305 [Abstract] (712) [HTML 1 KB] [PDF 574 KB] (401)
128102 Huang Jie (黄杰), Li Ming (黎明), Tang Chak-Wah (邓泽华), Lau Kei-May (刘纪美)
  Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD
    Chin. Phys. B   2014 Vol.23 (12): 128102-128102 [Abstract] (679) [HTML 1 KB] [PDF 1533 KB] (573)
128503 Li Jun-Shuai (李军帅), Zhang Xia (张霞), Yan Xin (颜鑫), Chen Xiong (陈雄), Li Liang (李亮), Cui Jian-Gong (崔建功), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏)
  Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays
    Chin. Phys. B   2014 Vol.23 (12): 128503-128503 [Abstract] (685) [HTML 1 KB] [PDF 2390 KB] (463)
88110 Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Yang Hao-Yu (杨皓宇), Lü You (吕游), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林)
  Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition
    Chin. Phys. B   2014 Vol.23 (8): 88110-088110 [Abstract] (587) [HTML 1 KB] [PDF 2173 KB] (366)
46802 Huang Wen-Bin (黄文斌), Wang Guang-Long (王广龙), Gao Feng-Qi (高凤岐), Qiao Zhong-Tao (乔中涛), Wang Gang (王刚), Chen Min-Jiang (陈闽江), Tao Li (陶立), Deng Ya (邓娅), Sun Lian-Feng (孙连峰)
  Dynamic surface wettability of three-dimensional graphene foam
    Chin. Phys. B   2014 Vol.23 (4): 46802-046802 [Abstract] (718) [HTML 1 KB] [PDF 859 KB] (579)
16101 Li Jun-Ze (李俊泽), Tao Yue-Bin (陶岳彬), Chen Zhi-Zhong (陈志忠), Jiang Xian-Zhe (姜显哲), Fu Xing-Xing (付星星), Jiang Shuang (姜爽), Jiao Qian-Qian (焦倩倩), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义)
  Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template
    Chin. Phys. B   2014 Vol.23 (1): 16101-016101 [Abstract] (545) [HTML 1 KB] [PDF 533 KB] (572)
78402 Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体)
  Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells
    Chin. Phys. B   2013 Vol.22 (7): 78402-078402 [Abstract] (852) [HTML 1 KB] [PDF 2267 KB] (779)
57802 Zhao De-Gang(赵德刚), Zhang Shuang(张爽), Liu Wen-Bao(刘文宝), Hao Xiao-Peng(郝小鹏), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Yang Hui(杨辉), and Wei Long(魏龙)
  Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
    Chin. Phys. B   2010 Vol.19 (5): 57802-057802 [Abstract] (1271) [HTML 1 KB] [PDF 327 KB] (917)
3024 Huang Rui(黄睿), Zhu Jing(朱静), and Yu Rong(于荣)
  Synthesis and electrical characterization of tungsten oxide nanowires
    Chin. Phys. B   2009 Vol.18 (7): 3024-3030 [Abstract] (1486) [HTML 1 KB] [PDF 7121 KB] (868)
2441 Li Wei(李炜), Chen Jun-Fang(陈俊芳), and Wang Teng(王腾)
  Prediction of the plasma distribution using an artificial neural network
    Chin. Phys. B   2009 Vol.18 (6): 2441-2444 [Abstract] (1623) [HTML 1 KB] [PDF 588 KB] (990)
2016 Liu Fei(刘飞), Su Zan-Jia(苏赞加), Liang Wei-Jie(梁炜杰), Mo Fu-Yao(莫富尧), Li Li(李力), Deng Shao-Zhi(邓少芝), Chen Jun(陈军), and Xu Ning-Sheng(许宁生)
  Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies
    Chin. Phys. B   2009 Vol.18 (5): 2016-2023 [Abstract] (1433) [HTML 0 KB] [PDF 2119 KB] (721)
773 Wang Jin-Xiao(王金晓), Qin Yan-Li(秦艳丽), Yan Heng-Qing(闫恒庆), Gao Ping-Qi(高平奇), Li Jun-Shuai(栗军帅), Yin Min(尹旻), and He De-Yan(贺德衍)
  Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature
    Chin. Phys. B   2009 Vol.18 (2): 773-777 [Abstract] (1143) [HTML 0 KB] [PDF 2786 KB] (572)
5072 Li Zhi-Ming(李志明),Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Xu Sheng-Rui(许晟瑞), Ni Jin-Yu(倪金玉), and Zhou Xiao-Wei(周小伟)
  Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor
    Chin. Phys. B   2009 Vol.18 (11): 5072-5077 [Abstract] (1645) [HTML 1 KB] [PDF 946 KB] (350)
320 Yan Jun-Feng(闫军锋), Wang Tao(汪韬), Wang Jing-Wei (王警卫), Zhang Zhi-Yong(张志勇), and Zhao Wu(赵武)
  Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition
    Chin. Phys. B   2009 Vol.18 (1): 320-323 [Abstract] (1159) [HTML 1 KB] [PDF 2342 KB] (1316)
3448 Zhang Li-Ping(张丽平), Zhang Jian-Jun(张建军), Shang Ze-Ren(尚泽仁), Hu Zeng-Xin(胡增鑫), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖)
  Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition
    Chin. Phys. B   2008 Vol.17 (9): 3448-3452 [Abstract] (1404) [HTML 1 KB] [PDF 1358 KB] (649)
2292 Liu Ci-Hui(刘磁辉), Liu Bing-Ce(刘秉策), and Fu Zhu-Xi(付竹西)
  Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition
    Chin. Phys. B   2008 Vol.17 (6): 2292-2296 [Abstract] (1538) [HTML 1 KB] [PDF 199 KB] (685)
3644 Wang Lan(王兰), Ouyang Xiao-Ping(欧阳晓平), Fan Ru-Yu(范如玉), Jin Yong-Jie(金永杰), Zhang Zhong-Bing(张忠兵), Pan Hong-Bo(潘洪波), Liu Lin-Yue(刘林月), Lü Fan-Xiu(吕反修), and Bu Ren-An(卜忍安)
  A CVD diamond film detector for pulsed proton detection
    Chin. Phys. B   2008 Vol.17 (10): 3644-3648 [Abstract] (1090) [HTML 1 KB] [PDF 662 KB] (515)
1101 Zhou Mei-Li(周美丽), Fu Ya-Bo(付亚波), Chen Qiang(陈强), and Ge Yuan-Jing(葛袁静)
  Deposition of SiOx barrier films by O2/TMDSO RF-PECVD
    Chin. Phys. B   2007 Vol.16 (4): 1101-1104 [Abstract] (1530) [HTML 1 KB] [PDF 231 KB] (1058)
848 Wang Jin-Liang(王金良) and Wu Er-Xing(毋二省)
  Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition
    Chin. Phys. B   2007 Vol.16 (3): 848-853 [Abstract] (1528) [HTML 1 KB] [PDF 378 KB] (578)
1374 Yang Hui-Dong (杨恢东), Su Zhong-Yi (苏中义)
  The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique
    Chin. Phys. B   2006 Vol.15 (6): 1374-1378 [Abstract] (1586) [HTML 1 KB] [PDF 246 KB] (774)
1320 Wu Zhi-Meng (吴志猛), Lei Qing-Song (雷青松), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Sun Jian (孙建), Xi Jian-Ping (奚建平)
  Effect of substrate temperature and pressure on properties of microcrystalline silicon films
    Chin. Phys. B   2006 Vol.15 (6): 1320-1324 [Abstract] (1607) [HTML 1 KB] [PDF 469 KB] (705)
980 Zhou Zu-Yuan (周祖源), Chen Guang-Chao (陈广超), Tang Wei-Zhong (唐伟忠), Lü Fan-Xiu (吕反修)
  OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system
    Chin. Phys. B   2006 Vol.15 (5): 980-984 [Abstract] (1570) [HTML 0 KB] [PDF 236 KB] (815)
1114 Liang Song (梁松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Wang Wei (王圩)
  Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD
    Chin. Phys. B   2006 Vol.15 (5): 1114-1119 [Abstract] (1170) [HTML 0 KB] [PDF 1163 KB] (542)
866 He Bin (何斌), Chen Guang-Hua (陈光华), Zhu Xiu-Hong (朱秀红), Zhang Wen-Li (张文理), Ding Yi (丁毅), Ma Zhan-Jie (马占杰), Gao Zhi-Hua (郜志华), Song Xue-Mei (宋雪梅), Deng Jin-Xiang (邓金祥)
  Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system
    Chin. Phys. B   2006 Vol.15 (4): 866-871 [Abstract] (1220) [HTML 1 KB] [PDF 301 KB] (463)
2713 Wu Zhi-Meng(吴志猛), Lei Qing-Song(雷青松), Geng Xin-Hua(耿新华), Zhao Ying(赵颖), Sun Jian(孙建), and Xi Jian-Ping(奚建平)
  Optical emission spectroscopy study on depositionprocess of microcrystalline silicon
    Chin. Phys. B   2006 Vol.15 (11): 2713-2717 [Abstract] (1425) [HTML 1 KB] [PDF 246 KB] (940)
2397 Xu Ying(许颖), Diao Hong-Wei(刁宏伟), Hao Hui-Ying(郝会颖), Zeng Xiang-Bo(曾湘波), and Liao Xian-Bo(廖显伯)
  Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing
    Chin. Phys. B   2006 Vol.15 (10): 2397-2401 [Abstract] (1284) [HTML 1 KB] [PDF 428 KB] (537)
213 Lei Qing-Song (雷青松), Wu Zhi-Meng (吴志猛), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Sun Jian (孙健), Xi Jian-Ping (奚建平)
  Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films
    Chin. Phys. B   2006 Vol.15 (1): 213-218 [Abstract] (1171) [HTML 1 KB] [PDF 273 KB] (533)
2342 Lei Qing-Song (雷青松), Wu Zhi-Meng (吴志猛), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Xi Jian-Ping (奚建平)
  Influence of the deposition parameters on the transition region of hydrogenated silicon films growth
    Chin. Phys. B   2005 Vol.14 (11): 2342-2347 [Abstract] (736) [HTML 1 KB] [PDF 291 KB] (459)
1370 Zhang Xiao-Dan (张晓丹), Zhao Ying (赵颖), Zhu Feng (朱锋), Sun Jian (孙建), Wei Chang-Chun (魏长春), Hou Guo-Fu (侯国付), Geng Xin-Hua (耿新华), Xiong Shao-Zhen (熊绍珍)
  Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD
    Chin. Phys. B   2004 Vol.13 (8): 1370-1374 [Abstract] (895) [HTML 1 KB] [PDF 226 KB] (501)
76 Wang Xi-zhang (王喜章), Hu Zheng (胡征), Wu Qiang (吴强), Chen Yi (陈懿)
  HIGH-YIELD PRODUCTION OF MULTI-WALLED CARBON NANOTUBES BY CATALYTIC DECOMPOSITION OF BENZENE VAPOR
    Chin. Phys. B   2001 Vol.10 (13): 76-79 [Abstract] (1005) [HTML 1 KB] [PDF 476 KB] (555)
545 Zhang Yong-ping (张永平), Gu You-song (顾有松), Chang Xiang-rong (常香荣), Tian Zhong-zhuo (田中卓), Shi Dong-xia (时东霞), Zhang Xiu-fang (张秀芳), Yuan Lei (袁磊)
  CRYSTALLINE CARBON NITRIDE THIN FILMS DEPOSITED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION
    Chin. Phys. B   2000 Vol.9 (7): 545-549 [Abstract] (834) [HTML 1 KB] [PDF 1097 KB] (745)
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