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Chin. Phys. B, 2017, Vol. 26(6): 068104    DOI: 10.1088/1674-1056/26/6/068104
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Magnesium incorporation efficiencies in MgxZn1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition

Qi-Chang Hu(胡启昌)1, Kai Ding(丁凯)2
1 College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou 350002, China;
2 Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
Abstract  We investigate the magnesium (Mg) incorporation efficiencies in MgxZn1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition (MOCVD) technique. In order to deposit high quality MgxZn1-xO films, atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O2 atmosphere and characterized by atomic force microscope (AFM). The AFM, scanning electron microscope (SEM), and x-ray diffraction (XRD) studies demonstrate that the MgxZn1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and VI/II ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high VI/II ratio are good for obtaining high Mg content.
Keywords:  MgxZn1-xO      MOCVD      incorporation efficiency      ZnO bulk crystal  
Received:  31 October 2016      Revised:  04 March 2017      Accepted manuscript online: 
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  68.37.-d (Microscopy of surfaces, interfaces, and thin films)  
  71.55.Gs (II-VI semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61474121) and the Major Scientific Project of Fujian Province, China (Grant No. 2014NZ0002-2).
Corresponding Authors:  Kai Ding     E-mail:  kding@fjirsm.ac.cn

Cite this article: 

Qi-Chang Hu(胡启昌), Kai Ding(丁凯) Magnesium incorporation efficiencies in MgxZn1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition 2017 Chin. Phys. B 26 068104

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