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Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD |
| Yudong Zhang(张玉栋)1,2, Jiale Tang(唐家乐)1,2, Yongjie Hu(胡永杰)1,2, Jie Yuan(袁杰)1,2, Lulu Guan(管路路)1,2, Xingyu Li(李星雨)1,2, Hushan Cui(崔虎山)2, Guanghui Ding(丁光辉)2, Xinying Shi(石新颖)1, Kaidong Xu(许开东)1,2, and Shiwei Zhuang(庄仕伟)1,† |
| 1 School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China; 2 Jiangsu Leuven Instruments Co. Ltd, Xuzhou 221300, China |
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Abstract The inductively coupled plasma chemical vapor deposition (ICP-CVD) deposited silicon nitride (SiNx) thin film was evaluated for its application as the electrical insulating film for a capacitor device. In order to achieve highest possible dielectric strength of SiNx, the process parameters of ICP-CVD were carefully tuned to control hydrogen in SiNx films by means of tuning N2/SiH4 ratio and radio frequency (RF) power. Besides electrical measurements, the hydrogen content in the films was measured by dynamic secondary ion mass spectrometry (D-SIMS). Fourier transform infrared spectroscopy (FTIR) and micro Raman spectroscopy were used to characterize the SiNx films by measuring Si-H and N-H bonds' intensities. It was found that the more Si-H bonds lead to the higher dielectric strength.
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Received: 16 November 2020
Revised: 28 January 2021
Accepted manuscript online: 01 March 2021
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PACS:
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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85.30.-z
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(Semiconductor devices)
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88.20.fn
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(Hydrogen)
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| Fund: Project supported by the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant Nos. 19KJD140002 and 19KJB140008), the Key Projects of Ministry of Science and Technology of China (Grant No. SQ2020YFF0407077), Postgraduate Research & Practice Innovation Program of Jiangsu Province, China (Grant Nos. 2020XKT786 and KYCX20_2337), the National Foreign Experts Bureau High-end Foreign Experts Project, China (Grant No. G20190114003), the Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018063), and the Scientific Research Program for Doctoral Teachers of JSNU (Grant No. 9212218113). |
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Corresponding Authors:
†Corresponding author. E-mail: zhuangshiwei@jsnu.edu.cn
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Cite this article:
Yudong Zhang(张玉栋), Jiale Tang(唐家乐), Yongjie Hu(胡永杰), Jie Yuan(袁杰), Lulu Guan(管路路), Xingyu Li(李星雨), Hushan Cui(崔虎山), Guanghui Ding(丁光辉), Xinying Shi(石新颖), Kaidong Xu(许开东), and Shiwei Zhuang(庄仕伟) Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD 2021 Chin. Phys. B 30 048103
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