| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Graphene/Mo2C heterostructure directly grown by chemical vapor deposition |
| Rongxuan Deng(邓荣轩)1,2, Haoran Zhang(张浩然)1,2, Yanhui Zhang(张燕辉)1, Zhiying Chen(陈志蓥)1, Yanping Sui(隋妍萍)1, Xiaoming Ge(葛晓明)1,2, Yijian Liang(梁逸俭)1,2, Shike Hu(胡诗珂)1,2, Guanghui Yu(于广辉)1, Da Jiang(姜达)1 |
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo2C heterostructure by using chemical vapor deposition (CVD). The composition and structure of the heterostructure are characterized through energy-dispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo2C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices.
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Received: 10 January 2017
Revised: 28 February 2017
Accepted manuscript online:
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PACS:
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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81.05.ue
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(Graphene)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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74.70.-b
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(Superconducting materials other than cuprates)
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Corresponding Authors:
Guanghui Yu, Da Jiang
E-mail: ghyu@mail.sim.ac.cn;jiangda@mail.sim.ac.cn
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Cite this article:
Rongxuan Deng(邓荣轩), Haoran Zhang(张浩然), Yanhui Zhang(张燕辉), Zhiying Chen(陈志蓥), Yanping Sui(隋妍萍), Xiaoming Ge(葛晓明), Yijian Liang(梁逸俭), Shike Hu(胡诗珂), Guanghui Yu(于广辉), Da Jiang(姜达) Graphene/Mo2C heterostructure directly grown by chemical vapor deposition 2017 Chin. Phys. B 26 067901
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